Tin phosphate barrier film, method, and apparatus
First Claim
1. A method of inhibiting oxygen and moisture penetration of a device, comprising the steps of:
- a. depositing a tin phosphate low liquidus temperature inorganic material on at least a portion of the device to create a deposited low liquidus temperature inorganic material; and
b. heat treating the deposited low liquidus temperature inorganic material in a substantially oxygen and moisture free environment to form a hermetic seal;
wherein the step of depositing the low liquidus temperature inorganic material comprises the use of a resistive heating element comprising tungsten.
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Abstract
A method is disclosed for inhibiting oxygen and moisture penetration of a device comprising the steps of depositing a tin phosphate low liquidus temperature (LLT) inorganic material on at least a portion of the device to create a deposited tin phosphate LLT material, and heat treating the deposited LLT material in a substantially oxygen and moisture free environment to form a hermetic seal; wherein the step of depositing the LLT material comprises the use of a resistive heating element comprising tungsten. An organic electronic device is also disclosed comprising a substrate plate, at least one electronic or optoelectronic layer, and a tin phosphate LLT barrier layer, wherein the electronic or optoelectronic layer is hermetically sealed between the tin phosphate LLT barrier layer and the substrate plate. An apparatus is also disclosed having at least a portion thereof sealed with a tin phosphate LLT barrier layer.
83 Citations
20 Claims
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1. A method of inhibiting oxygen and moisture penetration of a device, comprising the steps of:
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a. depositing a tin phosphate low liquidus temperature inorganic material on at least a portion of the device to create a deposited low liquidus temperature inorganic material; and b. heat treating the deposited low liquidus temperature inorganic material in a substantially oxygen and moisture free environment to form a hermetic seal; wherein the step of depositing the low liquidus temperature inorganic material comprises the use of a resistive heating element comprising tungsten. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. An organic electronic device comprising:
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a substrate plate; at least one organic electronic or optoelectronic layer; and a tin phosphate low liquidus temperature barrier layer, wherein the electronic or optoelectronic layer is hermetically sealed between the tin phosphate low liquidus temperature barrier layer and the substrate plate. - View Dependent Claims (10, 11, 12, 13, 14)
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- 15. An apparatus having at least a portion thereof sealed with a tin phosphate low liquidus temperature barrier layer.
Specification