SEMICONDUCTOR DEVICE HAVING HEATING STRUCTURE AND METHOD OF FORMING THE SAME
First Claim
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1. A semiconductor device comprising:
- a lower electrode including a bottom wall portion and a sidewall portion extending upwardly from the bottom wall portion;
an insulating layer located over a top edge surface of the sidewall portion of the lower electrode, the insulating layer including a contact window which partially exposes the top edge surface of the sidewall portion of the lower electrode; and
a heated pattern which contacts the partially exposed top edge surface of the sidewall portion of the lower electrode through the contact window of the insulating layer.
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Abstract
A semiconductor device includes a lower electrode including a bottom wall portion and a sidewall portion extending upwardly from the bottom wall portion, and an insulating layer located over a top edge surface of the sidewall portion of the lower electrode. The insulating layer includes a contact window which partially exposes the top edge surface of the sidewall portion of the lower electrode. The device further includes a heated pattern which contacts the partially exposed top edge surface of the sidewall portion of the lower electrode through the contact window of the insulating layer.
26 Citations
32 Claims
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1. A semiconductor device comprising:
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a lower electrode including a bottom wall portion and a sidewall portion extending upwardly from the bottom wall portion; an insulating layer located over a top edge surface of the sidewall portion of the lower electrode, the insulating layer including a contact window which partially exposes the top edge surface of the sidewall portion of the lower electrode; and a heated pattern which contacts the partially exposed top edge surface of the sidewall portion of the lower electrode through the contact window of the insulating layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18)
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19. A method of forming a semiconductor device, the method comprising:
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forming an external insulating pattern with a gap region on a semiconductor substrate; forming a lower electrode with a bottom wall portion and a sidewall portion in the gap region, the sidewall portion extending upwardly from the bottom portion; forming an insulating layer with a contact window on the external insulating pattern, the contact window partially exposing the top edge surface of the sidewall portion of the lower electrode; and forming a heated pattern on the insulating layer which contacts the partially exposed top edge surface of the sidewall portion of the lower electrode through the contact window. - View Dependent Claims (20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31, 32)
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Specification