DIELECTRIC ELEMENT AND ELECTRON EMITTER

• US 20080048569A1
• Filed: 08/15/2007
• Published: 02/28/2008
• Est. Priority Date: 08/24/2006
• Status: Abandoned Application

• Current Assignee: NGK Insulators Limited
• Original Assignee: NGK Insulators Limited
• Inventors: Hattori, Tetsuya, Yamaguchi, Hirofumi, Sato, Kei
• Application Number:
  US11/839,031
• Publication Number:
  US 20080048569A1
• Time in Patent Office: Days
• US Class Current: 315/169.1
• CPC Class Codes: B82Y 10/00 Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
• CPC Class Codes: H01J 1/312 having an electric field perpendicular to the surface, e.g. tunnel-effect cathodes of metal-insulator-metal [MIM] type H01J1/304- H01J1/308 take precedence
• CPC Class Codes: H01J 2201/306 Ferroelectric cathodes
• CPC Class Codes: H01J 2201/3125 Metal-insulator-Metal [MIM] emission type cathodes
• CPC Class Codes: H01J 31/127 using large area or array sources, i.e. essentially a source for each pixel group
• CPC Class Codes: Y10T 428/12667 Oxide of transition metal or Al

Abstract

Provided are a dielectric element and an electron emitter exhibiting suppressed deterioration of element characteristics, which deterioration would otherwise occur with repeated use thereof. An electron emitter (i.e., a dielectric element) of the present invention is configured so as to operate through application of a predetermined driving electric field to an emitter layer. The emitter layer is formed of a dielectric layer containing, as a primary component, a PMN-PT-PZ ternary solid solution composition, and having a Curie temperature Tc (° C.) falling within a range of 60≦Tc≦150.

Claims

1. An electron emitter comprising:

an emitter layer formed of a dielectric layer containing, as a primary component, a composition represented by the following formula;

Pb(Mg_1/3Nb_2/3)_aTi_bZr_cO₃

[wherein 0.2≦

a≦

0.375, 0.25≦

b≦

0.43, 0.25≦

c≦

0.375, and a+b+c=1], and having a Curie temperature Tc (°

C.) falling within a range of 60≦

Tc≦

150, the emitter layer being configured so that when a predetermined driving electric field is applied thereto in a reduced-pressure atmosphere, the emitter layer emits electrons toward the atmosphere; and

first and second electrodes provided on the emitter layer so as to apply the driving electric field to the emitter layer, the electron emitter being configured so that when the driving electric field is applied to the emitter layer through application of a predetermined drive voltage between the first electrode and the second electrode, electrons are emitted from the emitter layer toward the reduced-pressure atmosphere.

2. An electron emitter according to claim 1, wherein the dielectric layer constituting the emitter layer contains manganese in an amount of 0.2 to 1.0 wt. % as reduced to MnO₂.

3. An electron emitter according to claim 2, wherein, in the primary component of the dielectric layer constituting the emitter layer, 8 to 16 mol % of lead is substituted by strontium.

4. An electron emitter according to claim 1, wherein, in the primary component of the dielectric layer constituting the emitter layer, 8 to 16 mol % of lead is substituted by strontium.

5. A dielectric element comprising a dielectric layer containing, as a primary component, a composition represented by the following formula:

Pb(Mg_1/3Nb_2/3)_aTi_bZr_cO₃

[wherein 0.2≦

a≦

0.375, 0.25≦

b≦

0.43, 0.25≦

c≦

0.375, and a+b+c=1], and having a Curie temperature Tc (°

C.) falling within a range of 60≦

Tc≦

150.

6. A dielectric element according to claim 5, wherein the dielectric layer contains manganese in an amount of 0.2 to 1.0 wt. % as reduced to MnO₂.

7. A dielectric element according to claim 6, wherein, in the primary component of the dielectric layer, 8 to 16 mol % of lead is substituted by strontium.

8. A dielectric element according to claim 5, wherein, in the primary component of the dielectric layer, 8 to 16 mol % of lead is substituted by strontium.