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Spin-transfer based MRAM with reduced critical current density

  • US 20080049488A1
  • Filed: 08/28/2006
  • Published: 02/28/2008
  • Est. Priority Date: 08/28/2006
  • Status: Active Grant
First Claim
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1. A magnetic random access memory device comprising:

  • a fixed magnetic element;

    a free magnetic element having a first magnetization and a first anisotropy;

    an insulator positioned between the fixed magnetic element and the free magnetic element; and

    a keeper layer positioned contiguous to the free magnetic element and having a second anisotropy orthogonal to the first anisotropy.

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