Methods of Programming Multi-Bit Flash Memory Devices and Related Devices

• US 20080049497A1
• Filed: 08/22/2007
• Published: 02/28/2008
• Est. Priority Date: 08/24/2006
• Status: Active Grant

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electronics Co. Ltd.
• Inventors: Mo, Hyun Sun
• Granted Patent: US 7,684,238 B2
• Time in Patent Office: Days
• US Class Current: 365/185.03
• CPC Class Codes: G11C 11/5628 Programming or writing circuits; Data input circuits
• CPC Class Codes: G11C 16/0483 comprising cells having several storage transistors connected in series
• CPC Class Codes: G11C 16/10 Programming or data input circuits
• CPC Class Codes: G11C 2211/5621 Multilevel programming verification

Abstract

Methods of programming a multi-bit non-volatile memory device are provided. The multi-bit non-volatile memory device includes a memory cell array including a plurality of memory cells and a storage unit electrically coupled to the memory cell array. A first bit (FB) of multi-bit data is programmed from the storage unit into one of the plurality of memory cells in the memory cell array. A second bit (SB) of multi-bit data is programmed from the storage unit into one of the plurality of memory cells in the memory cell array using data inversion. Related memory devices are also provided.

Claims

1. A method of programming a multi-bit non-volatile memory device, the multi-bit non-volatile memory device including a memory cell array including a plurality of memory cells and a storage unit electrically coupled to the memory cell array, the method comprising:

programming a first bit (FB) of multi-bit data from the storage unit into one of the plurality of memory cells in the memory cell array; and

programming a second bit (SB) of multi-bit data from the storage unit into one of the plurality of memory cells in the memory cell array using data inversion.

2. The method of claim 1, wherein programming a second bit of multi-bit data comprises:

executing a first SB program using data inversion;

executing a second SB program; and

executing a third SB program to provide the programmed second bit of multi-bit data.

3. The method of claim 2, wherein the first SB program operation using data inversion comprises bringing data in one of the memory cells whose data is in FB state “

10”

before the first SB program operation into SB state “

10”

after the first SB program operation.

4. The method of claim 3, wherein data in the storage unit is inverted and wherein executing the first SB program comprises executing the first SB program using the inverted data.

5. The method of claim 3, wherein after data inversion data “

0”

is inhibited and wherein data “

1”

is programmed.

6. The method of claim 2, wherein the second SB program operation comprises bringing one of the memory cells whose data is in FB state “

10”

(LSB programmed) before the second SB program into state “

00”

after the second SB program.

7. The method of claim 2, wherein the third SB program operation comprises bringing one of the memory cells whose data is in state “

11”

before the third SB program operation into state “

01”

after the third SB program operation to provide a programmed second bit of multi-bit data.

8. The method of claim 1, wherein programming using data inversion allows the second bit of multi-bit data to be programmed into the memory cell with two read operations.

9. The method of claim 8, wherein reading the second bit of multi-bit data using two read operations further comprises:

applying a first read voltage to one of the memory cells; and

applying a second read voltage to the one of the memory cells to read the second bit of multi-bit data in the one of the memory cells.

10. The method of claim 1, further comprising reading the first bit of multi-bit data by applying a read voltage to one of the memory cells to read the first bit of multi-bit data.

11. The method of claim 1, wherein the first bit of multi-bit data corresponds to a least significant bit (LSB) of the multi-bit data and wherein the second bit of multi-bit data corresponds to a most significant bit (MSB) of the multi-bit data.

12. The method of claim 11, wherein the multi-bit data comprises data having one of state “

0”

, state “

1”

, state “

2” and

state “

3”

, wherein each of the states has a different threshold voltage and wherein an MSB of state “

0”

is 1 and an LSB of state “

0”

is 1, an MSB of state “

1”

is 0 and an LSB of state “

1”

is 1, an MSB of state “

2”

is 0 and an LSB of state “

2”

is 0 and an MSB of state “

3”

is 1 and an LSB of state “

3”

is 0.

13. The method of claim 1, wherein programming the second bit of multi-bit data comprises:

loading inverted data from the storage unit;

programming the second bit of multi-bit data into one of the plurality of memory cells based on the loaded inverted data such that the second bit of multi-bit data is programmed with a maximum of two read operations.

14. The method of claim 1, wherein programming a first bit of multi-bit data from the storage unit comprises:

loading the multi-bit data;

programming the first bit of the multi-bit data into one of the plurality of memory cells;

determining if a the first bit of the multi-bit data has been correctly programmed; and

incrementally changing a level of the programmed first bit of multi-bit data if the first bit of multi-bit data has not been correctly programmed until it is determined that the first bit of multi-bit data has been correctly programmed or a maximum number of verification cycles has been exceeded.

15. The method of claim 14, wherein loading the multi-bit data is preceded by resetting the storage unit.

16. The method of claim 1, wherein the storage unit comprises a combination of a single latch page buffer and a buffer random access memory (RAM), the first bit of multi-bit data being stored in the single latch page buffer and the second bit of multi-bit data being stored in the buffer RAM.

17. The method of claim 16, wherein preprogrammed data is also stored in the single latch page buffer.

18. The method of claim 1, wherein the storage unit comprises first and second page buffers, wherein the first bit of multi-bit data is stored in the first page buffer and the second bit of multi-bit data is stored in the second page buffer.

19. The method of claim 18, wherein the first page buffer is an upper page buffer and the second page buffer is a lower page buffer.

20. The method of claim 1, wherein the storage unit comprises a double latch page buffer including first and second latches, the first bit of multi-bit data being stored in the first latch of the double latch page buffer and the second bit of multi-bit data being stored in the second latch of the double latch page buffer.

21. A method of programming a multi-bit non-volatile memory device, the multi-bit non-volatile memory device including a memory cell array including a plurality of memory cells and a storage unit electrically coupled to the memory cell array, the method comprising:

programming a first bit of multi-bit data from the storage unit into one of the plurality of memory cells in the memory cell array; and

programming a second bit of multi-bit data from the storage unit into one of the plurality of memory cells in the memory cell array using data inversion, wherein programming the second bit of multi-bit data using data inversion comprises;

inverting the second bit of multi-bit data; and

executing inverted second bit of multi-bit data program.

22. A multi-bit non-volatile memory device comprising:

a memory cell array including a plurality of memory cells; and

a storage unit electrically coupled to the memory cell array, wherein the memory device is configured to program a first bit of multi-bit data from the storage unit into one of the plurality of memory cells in the memory cell array and program a second bit of multi-bit data from the storage unit into one of the plurality of memory cells in the memory cell array using data inversion.

23. The memory device of claim 22, wherein the storage unit comprises a combination of a single latch page buffer and a buffer random access memory (RAM), the first bit of multi-bit data being stored in the single latch page buffer and the second bit of multi-bit data being stored in the buffer RAM.

24. The memory device of claim 23, wherein preprogrammed data is stored in the single latch page buffer.

25. The memory device of claim 22, wherein the storage unit comprises first and second page buffers, wherein the first bit of multi-bit data is stored in the first page buffer and the second bit of multi-bit data is stored in the second page buffer.

26. The memory device of claim 25, wherein the first page buffer is an upper page buffer and the second page buffer is a lower page buffer.

27. The memory device of claim 22, wherein the storage unit comprises a double latch page buffer including first and second latches, the first bit of multi-bit data being stored in the first latch of the double latch page buffer and the second bit of multi-bit data being stored in the second latch of the double latch page buffer.

28. The memory device of claim 22, wherein using data inversion allows the second bit of multi-bit data to be programmed into the memory cell with two read operations.

29. The memory device of claim 22, wherein the memory device is further configured to:

execute a first SB program using data inversion;

execute a second SB program; and

execute a third SB program to provide the second bit of multi-bit data.