Alternate Row-Based Reading and Writing for Non-Volatile Memory
First Claim
1. A method of reading non-volatile storage, comprising:
- receiving a request for one or more pages of data stored in a block of non-volatile storage elements, the block includes a plurality of word lines, the one or more pages of data are stored in non-volatile storage elements in communication with a first subset of the plurality of word lines, the first subset includes a first word line and less than all of the word lines of the plurality;
reading one or more additional pages of data stored in the block in response to the request, wherein the one or more additional pages of data are stored in non-volatile storage elements in communication with a second subset of the plurality of word lines, the second subset includes a second word line adjacent to the first word line; and
reading the one or more requested pages of data stored in the block including reading storage elements of the first word line using offsets from a predetermined set of offsets based on charge levels of adjacent storage elements of the second word line and charge levels of adjacent storage elements of a third word line.
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Accused Products
Abstract
A set of storage elements is programmed beginning with a word line WLn adjacent a select gate line for the set. After programming the first word line, the next word line WLn+1 adjacent to the first word line is skipped and the next word line WLn+2 adjacent to WLn+1 is programmed. WLn+1 is then programmed. Programming continues according to the sequence {WLn+4, WLn+3, WLn+6, WLn+5, . . . } until all but the last word line for the set have been programmed. The last word line is then programmed. By programming in this manner, some of the word lines of the set (WLn+1, WLn+3, etc.) have no subsequently programmed neighboring word lines. The memory cells of these word lines will not experience any floating gate to floating gate coupling threshold voltage shift impact due to subsequently programmed neighboring memory cells. The word lines having no subsequently programmed neighbors are read without using offsets or compensations based on neighboring memory cells. The other word lines are read using compensations based on data states within both subsequently programmed neighboring word lines.
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Citations
24 Claims
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1. A method of reading non-volatile storage, comprising:
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receiving a request for one or more pages of data stored in a block of non-volatile storage elements, the block includes a plurality of word lines, the one or more pages of data are stored in non-volatile storage elements in communication with a first subset of the plurality of word lines, the first subset includes a first word line and less than all of the word lines of the plurality;
reading one or more additional pages of data stored in the block in response to the request, wherein the one or more additional pages of data are stored in non-volatile storage elements in communication with a second subset of the plurality of word lines, the second subset includes a second word line adjacent to the first word line; and
reading the one or more requested pages of data stored in the block including reading storage elements of the first word line using offsets from a predetermined set of offsets based on charge levels of adjacent storage elements of the second word line and charge levels of adjacent storage elements of a third word line. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. A method of reading data from a non-volatile memory array, comprising:
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receiving a request for one or more pages of data stored in non-volatile storage elements associated with a first subset of word lines for a block of non-volatile storage elements;
reading one or more additional pages of data stored in non-volatile storage elements associated with a second subset of word lines for the block in response to the request;
reading the one or more requested pages, wherein reading non-volatile storage elements associated with a particular word line in the first subset includes using offsets from a predetermined set of offsets based on charge levels of non-volatile storage elements associated with a first adjacent word line and charge levels of non-volatile storage elements associated with a second adjacent word line;
providing the one or more requested pages of data; and
maintaining the one or more additional pages of data. - View Dependent Claims (13, 14, 15, 16, 17)
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18. A method of programming a set of non-volatile storage elements in communication with a plurality of word lines, comprising:
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programming non-volatile storage elements in communication with a first subset of word lines using a program voltage signal having a first plurality of program voltage pulses and a first step size; and
programming non-volatile storage elements in communication with a second subset of word lines using a program voltage signal having a second plurality of program voltage pulses and a second step size, wherein each word line of the second subset is adjacent to two word lines of the first subset and is programmed after programming is completed for each of the two word lines in the first subset to which it is adjacent, the second step size is larger than the first step size. - View Dependent Claims (19, 20)
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21. A method of programming a set of non-volatile storage elements coupled to a plurality of word lines, comprising:
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completing programming of non-volatile storage elements in communication with a first word line that is adjacent to a first select line for the set of non-volatile storage elements;
completing programming of non-volatile storage elements in communication with a third word line that is adjacent to a second word line after completing programming for the first word line, the second word line is adjacent to the first word line, wherein programming the storage elements in communication with the third word line includes using a program voltage signal with a first step size; and
completing programming of non-volatile storage elements in communication with the second word line after completing programming for the third word line, wherein programming the non-volatile storage elements in communication with the second word line includes using a program voltage signal with a second step size. - View Dependent Claims (22, 23, 24)
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Specification