Method for Manufacturing Semiconductor Device

• US 20080050895A1
• Filed: 08/17/2007
• Published: 02/28/2008
• Est. Priority Date: 08/25/2006
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Miyairi, Hidekazu, Higa, Eiji
• Granted Patent: US 8,563,431 B2
• Time in Patent Office: Days
• US Class Current: 438/507
• CPC Class Codes: H01L 21/311 Etching the insulating layers by chemical or physical means H01L21/31058 takes precedence
• CPC Class Codes: H01L 21/32139 using masks
• CPC Class Codes: H01L 27/1214 comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
• CPC Class Codes: H01L 27/1288 employing particular masking sequences or specially adapted masks, e.g. half-tone mask

Abstract

In a manufacturing process of a semiconductor device, a manufacturing technique for reducing the number of lithography processes using a photoresist and simplifying the process is provided, and the throughput is improved. An etching mask for forming a pattern of a layer to be processed such as a conductive layer or a semiconductor layer is manufactured without using a lithography technique that uses a photoresist. The etching mask is formed of a stacked layer structure of a light absorption layer and an insulating layer utilizing laser ablation by laser beam irradiation through a photomask.

Claims

1. A manufacturing method of a semiconductor device, comprising:

forming a layer to be processed;

forming a light absorption layer over the layer to be processed;

forming an insulating layer over the light absorption layer;

irradiating the light absorption layer and the insulating layer with a laser beam through a photomask, so that at least an irradiated region of the insulating layer is removed; and

etching the layer to be processed using a left part of the insulating layer as a mask.

2. The manufacturing method of a semiconductor device according to claim 1, wherein the layer to be processed comprises a conductive material or a semiconductor material.

3. The manufacturing method of a semiconductor device according to claim 1, wherein the light absorption layer comprises a material which absorbs the laser beam.

4. The manufacturing method of a semiconductor device according to claim 1, wherein the light absorption layer comprises a conductive material, a semiconductor material, or an insulating material.

5. The manufacturing method of a semiconductor device according to claim 1, wherein the light absorption layer comprises at least one of elements of chromium (Cr), molybdenum (Mo), nickel (Ni), titanium (Ti), cobalt (Co), copper (Cu), and aluminum (Al).

6. The manufacturing method of a semiconductor device according to claim 1, wherein the insulating layer comprises a material which transmits the laser beam.

7. The manufacturing method of a semiconductor device according to claim 1, wherein a mask including a region which transmits the laser beam and a region which blocks the laser beam is used as the photomask.

14. The manufacturing method of a semiconductor device according to claim 2, wherein the insulating layer comprises a material which transmits the laser beam.

15. The manufacturing method of a semiconductor device according to claim 2, wherein a mask including a region which transmits the laser beam and a region which blocks the laser beam is used as the photomask.

8. A manufacturing method of a semiconductor device, comprising:

forming a layer to be processed;

forming a light absorption layer over the layer to be processed;

forming an insulating layer over the light absorption layer;

irradiating the light absorption layer and the insulating layer with a laser beam through a photomask, so that at least an irradiated region of the insulating layer is removed; and

etching the layer to be processed using a left part of the insulating layer as a mask, so that the layer having a tapered shape is formed.

9. The manufacturing method of a semiconductor device according to claim 8, wherein a wet etching method or a combination of a dry etching method and a wet etching method is used for etching the layer to be processed.

10. The manufacturing method of a semiconductor device according to claim 8, wherein the layer to be processed comprises a conductive material or a semiconductor material.

11. The manufacturing method of a semiconductor device according to claim 8, wherein the light absorption layer comprises a material which absorbs the laser beam.

12. The manufacturing method of a semiconductor device according to claim 8, wherein the light absorption layer comprises a conductive material, a semiconductor material, or an insulating material.

13. The manufacturing method of a semiconductor device according to claim 8, wherein the light absorption layer comprises at least one of elements of chromium (Cr), molybdenum (Mo), nickel (Ni), titanium (Ti), cobalt (Co), copper (Cu), and aluminum (Al).

16. A manufacturing method of a semiconductor device comprising:

forming a layer to be processed;

forming a light absorption layer over the layer to be processed;

forming an insulating layer over the light absorption layer;

irradiating the light absorption layer and the insulating layer with a laser beam through a photomask, so that at least an irradiated region of the insulating layer is removed; and

etching the layer to be processed using a left part of the insulating layer as a mask, so that the layer having a perpendicular shape is formed.

17. The manufacturing method of a semiconductor device according to claim 16, wherein a dry etching method is used for etching the layer to be processed.

18. The manufacturing method of a semiconductor device according to claim 16, wherein the layer to be processed comprises a conductive material or a semiconductor material.

19. The manufacturing method of a semiconductor device according to claim 16, wherein the light absorption layer comprises a material which absorbs the laser beam.

20. The manufacturing method of a semiconductor device according to claim 16, wherein the light absorption layer comprises a conductive material, a semiconductor material, or an insulating material.

21. The manufacturing method of a semiconductor device according to claim 16, wherein the light absorption layer comprises at least one of elements of chromium (Cr), molybdenum (Mo), nickel (Ni), titanium (Ti), cobalt (Co), copper (Cu), and aluminum (Al).

22. The manufacturing method of a semiconductor device according to claim 16, wherein the insulating layer comprises a material which transmits the laser beam.

23. The manufacturing method of a semiconductor device according to claim 16, wherein a mask including a region which transmits the laser beam and a region which blocks the laser beam is used as the photomask.