NITRIDE SEMICONDUCTOR SUBSTRATE AND METHOD OF MANUFACTURING THE SAME

• US 20080054294A1
• Filed: 11/22/2006
• Published: 03/06/2008
• Est. Priority Date: 09/05/2006
• Status: Abandoned Application

• Current Assignee: Industrial Technology Research Institute
• Original Assignee: Industrial Technology Research Institute
• Inventors: Guo, Yih-Der, Tsay, Jenq-Dar, Lai, Chih-Ming, Liu, Wen-Yueh
• Application Number:
  US11/562,422
• Publication Number:
  US 20080054294A1
• Time in Patent Office: Days
• US Class Current: 257/103
• CPC Class Codes: H01L 21/0237 Materials
• CPC Class Codes: H01L 21/02458 Nitrides
• CPC Class Codes: H01L 21/02463 Arsenides
• CPC Class Codes: H01L 21/0254 Nitrides
• CPC Class Codes: H01L 21/02639 Preparation of substrate for selective deposition
• CPC Class Codes: H01L 21/02642 Mask materials other than SiO2 or SiN
• CPC Class Codes: H01L 21/02647 Lateral overgrowth

Abstract

The present invention relates to a method of forming a nitride semiconductor substrate. This method includes steps of providing a substrate and then forming an epitaxy layer on the substrate. A patterned mask layer is formed on the epitaxy layer, wherein the patterned mask layer exposes a portion of the epitaxy layer. Next, an oxidation process is performed to oxidize the exposed epitaxy layer so as to form a plurality of dislocation blocking structures. The patterned mask layer is then removed. Further, a nitride semiconductor layer is formed on the epitaxy layer having the dislocation blocking structures.

Claims

1. A method of forming a nitride semiconductor substrate, comprising:

providing a substrate;

forming a epitaxy layer on the substrate;

forming a patterned mask layer on the epitaxy layer, wherein the patterned mask layer exposes a portion of the epitaxy layer;

performing an oxidation process to completely oxidize the exposed epitaxy layer so as to form a plurality of dislocation blocking structure;

removing the patterned mask layer; and

forming a nitride semiconductor layer on the epitaxy layer having the dislocation blocking structures.

2. The method of claim 1, wherein the material of the substrate is selected from a group consisting of silicon, silicon carbide, aluminum oxide, sapphire, zinc oxide, magnesium oxide and a combination thereof.

3. The method of claim 2, the epitaxy layer includes a nitride epitaxy material layer.

4. The method of claim 3, the material of the nitride epitaxy material layer is selected from a group consisting of gallium nitride, indium nitride, aluminum nitride, indium gallium nitride, gallium aluminum nitride, indium aluminum nitride, aluminum indium gallium nitride and a combination thereof.

5. The method of claim 2, wherein the oxidation process comprises a step of using an electrolytic solution.

6. The method of claim 5, wherein the pH value of the electrolytic solution is between 3 and 10.

7. The method of claim 5, wherein the oxidation process further comprises a step of performing a high-energy light illuminating.

8. The method of claim 7, wherein the high-energy light illuminating process comprises a step of using an ultraviolet light.

9. The method of claim 1, wherein the material of the substrate is selected from a group consisting of gallium arsenide, gallium phosphide, gallium arsenide phosphide, gallium arsenide aluminum and a combination thereof.

10. The method of claim 9, wherein the material of the epitaxy layer is selected from a group consisting of an arsenide epitaxy material containing aluminum, an arsenide epitaxy material containing aluminum and gallium and a combination thereof.

11. The method of claim 10, wherein the ratio between the aluminum atoms and the total number of aluminum atoms and gallium atoms in the arsenide epitaxy material containing aluminum and gallium is larger than 0.8.

12. The method of claim 9, wherein the oxidation process comprises a wet oxidation step.

13. The method of claim 12, wherein the wet oxidation step is performed in the condition of water vapor and under the temperature of 200˜

600°

C.

14. A method of manufacturing a nitride semiconductor substrate, comprising:

providing a substrate having an epitaxy layer thereon;

forming a patterned mask layer on the epitaxy layer, wherein the patterned mask layer exposes a portion of the epitaxy layer;

performing an oxidation process to oxidize the exposed epitaxy layer so as to form a plurality of dislocation blocking structures, wherein the dislocation blocking structures are disposed in the epitaxy layer.

removing the patterned mask layer; and

forming a nitride semiconductor layer to cover the epitaxy layer.

15. The method of claim 14, wherein the material of the substrate is selected from a group consisting of silicon, silicon carbide, aluminum oxide, sapphire, zinc oxide, magnesium oxide and a combination thereof.

16. The method of claim 15, the material of the epitaxy layer comprises a nitride epitaxy material layer, and the material of the nitride epitaxy material layer is selected from a group consisting of gallium nitride, indium nitride, aluminum nitride, indium gallium nitride, gallium aluminum nitride, indium aluminum nitride, aluminum indium gallium nitride and a combination thereof.

17. The method of claim 15, wherein the oxidation process comprises a step of using an electrolytic solution, and the pH value of the electrolytic solution is between 3 and 10.

18. The method of claim 15, wherein the oxidation process further comprises a step of performing a high-energy light illuminating.

19. The method of claim 15, wherein the material of the substrate is selected from a group consisting of gallium arsenide, gallium phosphide, gallium arsenide phosphide, gallium arsenide aluminum and a combination thereof.

20. The method of claim 19, wherein the material of the epitaxy layer is selected from a group consisting of an arsenide epitaxy material containing aluminum, an arsenide epitaxy material containing aluminum and gallium, and the ratio between the aluminum atoms and the total number of aluminum atoms and gallium atoms in the arsenide epitaxy material containing aluminum and gallium is larger than 0.8.

21. The method of claim 19, wherein the oxidation process comprises a wet oxidation step, which is performed in the condition of water vapor and under the temperature of 200˜

600°

C.

22. A nitride semiconductor substrate, comprising:

a substrate;

a nitride semiconductor layer disposed over the substrate;

a plurality of blocking structures disposed between the substrate and the nitride semiconductor layer; and

an epitaxy layer filling between the blocking structures.

23. The nitride semiconductor substrate as claimed in claim 22, wherein the material of the substrate is selected from a group consisting of silicon, silicon carbide, aluminum oxide, sapphire, zinc oxide, magnesium oxide and a combination thereof.

24. The nitride semiconductor substrate as claimed in claim 23, wherein the material of the epitaxy layer comprises a nitride epitaxy material layer, and the material of the nitride epitaxy material layer is selected from a group consisting of gallium nitride, indium nitride, aluminum nitride, indium gallium nitride, gallium aluminum nitride, indium aluminum nitride, aluminum indium gallium nitride and a combination thereof.

25. The nitride semiconductor substrate as claimed in claim 22, wherein the material of the substrate is selected from a group consisting of gallium arsenide, gallium phosphide, gallium arsenide phosphide, gallium arsenide aluminum and a combination thereof.

26. The nitride semiconductor substrate as claimed in claim 25, wherein the material of the epitaxy layer is selected from a group consisting of an arsenide epitaxy material containing aluminum, an arsenide epitaxy material containing aluminum and gallium, and the ratio between the aluminum atoms and the total number of aluminum atoms and gallium atoms in the arsenide epitaxy material containing aluminum and gallium is larger than 0.8.

27. The nitride semiconductor substrate as claimed in claim 22, wherein the material of the blocking structures at least comprises aluminum oxide or gallium oxide.