SEMICONDUCTOR CHIP AND METHOD FOR FABRICATING THE SAME

• US 20080054457A1
• Filed: 09/06/2007
• Published: 03/06/2008
• Est. Priority Date: 09/06/2006
• Status: Active Grant

• Current Assignee: Qualcomm, Inc.
• Original Assignee: Megica Corporation (Chipbond Technology Corporation)
• Inventors: Lin, Mou-Shiung, Chou, Chiu-Ming
• Granted Patent: US 7,582,966 B2
• Time in Patent Office: Days
• US Class Current: 257/737
• CPC Class Codes: H01L 21/563 Encapsulation of active face of flip-chip device, e.g. underfilling or underencapsulation of flip-chip, encapsulation preform on chip or mounting substrate
• CPC Class Codes: H01L 2224/02166 Collar structures
• CPC Class Codes: H01L 2224/0231 Manufacturing methods of the redistribution layers
• CPC Class Codes: H01L 2224/0401 Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
• CPC Class Codes: H01L 2224/04042 Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
• CPC Class Codes: H01L 2224/04073 Bonding areas specifically adapted for connectors of different types
• CPC Class Codes: H01L 2224/05166 Titanium [Ti] as principal constituent
• CPC Class Codes: H01L 2224/05552 in top view
• CPC Class Codes: H01L 2224/05553 being rectangular
• CPC Class Codes: H01L 2224/05568 the whole external layer protruding from the surface
• CPC Class Codes: H01L 2224/05639 Silver [Ag] as principal constituent
• CPC Class Codes: H01L 2224/05644 Gold [Au] as principal constituent
• CPC Class Codes: H01L 2224/05647 Copper [Cu] as principal constituent
• CPC Class Codes: H01L 2224/05655 Nickel [Ni] as principal constituent
• CPC Class Codes: H01L 2224/05664 Palladium [Pd] as principal constituent
• CPC Class Codes: H01L 2224/05669 Platinum [Pt] as principal constituent
• CPC Class Codes: H01L 2224/05673 Rhodium [Rh] as principal constituent
• CPC Class Codes: H01L 2224/05676 Ruthenium [Ru] as principal constituent
• CPC Class Codes: H01L 2224/0603 Bonding areas having different sizes, e.g. different heights or widths
• CPC Class Codes: H01L 2224/06505 Bonding areas having different materials
• CPC Class Codes: H01L 2224/114 : by blanket deposition of the material of the bump connector
• CPC Class Codes: H01L 2224/1147 : using a lift-off mask
• CPC Class Codes: H01L 2224/116 : by patterning a pre-deposited material treatment of parts prior to assembly of the devices H01L21/48
• CPC Class Codes: H01L 2224/13023 : the whole bump connector protruding from the surface
• CPC Class Codes: H01L 2224/13099 : Material
• CPC Class Codes: H01L 2224/1319 : with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
• CPC Class Codes: H01L 2224/1329 : with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
• CPC Class Codes: H01L 2224/133 : with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
• CPC Class Codes: H01L 2224/13583 : Three-layer coating
• CPC Class Codes: H01L 2224/13639 : Silver [Ag] as principal constituent
• CPC Class Codes: H01L 2224/13644 : Gold [Au] as principal constituent
• CPC Class Codes: H01L 2224/13647 : Copper [Cu] as principal constituent
• CPC Class Codes: H01L 2224/13655 : Nickel [Ni] as principal constituent
• CPC Class Codes: H01L 2224/13664 : Palladium [Pd] as principal constituent
• CPC Class Codes: H01L 2224/13669 : Platinum [Pt] as principal constituent
• CPC Class Codes: H01L 2224/13673 : Rhodium [Rh] as principal constituent
• CPC Class Codes: H01L 2224/13676 : Ruthenium [Ru] as principal constituent
• CPC Class Codes: H01L 2224/13683 : Rhenium [Re] as principal constituent
• CPC Class Codes: H01L 2224/14 : of a plurality of bump connectors
• CPC Class Codes: H01L 2224/1403 : Bump connectors having different sizes, e.g. different diameters, heights or widths
• CPC Class Codes: H01L 2224/14505 : Bump connectors having different materials
• CPC Class Codes: H01L 2224/16145 : the bodies being stacked
• CPC Class Codes: H01L 2224/29111 : Tin [Sn] as principal constituent
• CPC Class Codes: H01L 2224/2919 : with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
• CPC Class Codes: H01L 2224/45015 : being circular
• CPC Class Codes: H01L 2224/45124 : Aluminium (Al) as principal constituent
• CPC Class Codes: H01L 2224/45144 : Gold (Au) as principal constituent
• CPC Class Codes: H01L 2224/45147 : Copper (Cu) as principal constituent
• CPC Class Codes: H01L 2224/48091 : Arched
• CPC Class Codes: H01L 2224/48227 : connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/48465 : the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
• CPC Class Codes: H01L 2224/48639 : Silver (Ag) as principal constituent
• CPC Class Codes: H01L 2224/48644 : Gold (Au) as principal constituent
• CPC Class Codes: H01L 2224/48647 : Copper (Cu) as principal constituent
• CPC Class Codes: H01L 2224/48655 : Nickel (Ni) as principal constituent
• CPC Class Codes: H01L 2224/48664 : Palladium (Pd) as principal constituent
• CPC Class Codes: H01L 2224/48669 : Platinum (Pt) as principal constituent
• CPC Class Codes: H01L 2224/48673 : Rhodium (Rh) as principal constituent
• CPC Class Codes: H01L 2224/48739 : Silver (Ag) as principal constituent
• CPC Class Codes: H01L 2224/48744 : Gold (Au) as principal constituent
• CPC Class Codes: H01L 2224/48747 : Copper (Cu) as principal constituent
• CPC Class Codes: H01L 2224/48755 : Nickel (Ni) as principal constituent
• CPC Class Codes: H01L 2224/48764 : Palladium (Pd) as principal constituent
• CPC Class Codes: H01L 2224/48769 : Platinum (Pt) as principal constituent
• CPC Class Codes: H01L 2224/48773 : Rhodium (Rh) as principal constituent
• CPC Class Codes: H01L 2224/48839 : Silver (Ag) as principal constituent
• CPC Class Codes: H01L 2224/48844 : Gold (Au) as principal constituent
• CPC Class Codes: H01L 2224/48847 : Copper (Cu) as principal constituent
• CPC Class Codes: H01L 2224/48855 : Nickel (Ni) as principal constituent
• CPC Class Codes: H01L 2224/48864 : Palladium (Pd) as principal constituent
• CPC Class Codes: H01L 2224/48869 : Platinum (Pt) as principal constituent
• CPC Class Codes: H01L 2224/48873 : Rhodium (Rh) as principal constituent
• CPC Class Codes: H01L 2224/73203 : Bump and layer connectors
• CPC Class Codes: H01L 2224/73204 : the bump connector being embedded into the layer connector
• CPC Class Codes: H01L 2224/73265 : Layer and wire connectors
• CPC Class Codes: H01L 2224/8385 : using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
• CPC Class Codes: H01L 2224/83851 : being an anisotropic conductive adhesive
• CPC Class Codes: H01L 2224/86 : using tape automated bonding [TAB]
• CPC Class Codes: H01L 2225/0651 : Wire or wire-like electrical connections from device to substrate
• CPC Class Codes: H01L 2225/06513 : Bump or bump-like direct electrical connections between devices, e.g. flip-chip connection, solder bumps
• CPC Class Codes: H01L 2225/06517 : Bump or bump-like direct electrical connections from device to substrate
• CPC Class Codes: H01L 2225/06527 : Special adaptation of electrical connections, e.g. rewiring, engineering changes, pressure contacts, layout
• CPC Class Codes: H01L 2225/06586 : Housing with external bump or bump-like connectors
• CPC Class Codes: H01L 23/3114 : the device being a chip scale package, e.g. CSP
• CPC Class Codes: H01L 24/03 : Manufacturing methods
• CPC Class Codes: H01L 24/05 : of an individual bonding area
• CPC Class Codes: H01L 24/11 : Manufacturing methods for bumps on insulating substrates H01L21/4853
• CPC Class Codes: H01L 24/13 : of an individual bump connector
• CPC Class Codes: H01L 24/16 : of an individual bump connector
• CPC Class Codes: H01L 24/29 : of an individual layer connector
• CPC Class Codes: H01L 24/32 : of an individual layer connector
• CPC Class Codes: H01L 24/45 : of an individual wire connector
• CPC Class Codes: H01L 24/48 : of an individual wire connector
• CPC Class Codes: H01L 24/83 : using a layer connector
• CPC Class Codes: H01L 25/0657 : Stacked arrangements of devices
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00012 : Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00013 : Fully indexed content
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/0002 : Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 2924/01006 : Carbon [C]
• CPC Class Codes: H01L 2924/01007 : Nitrogen [N]
• CPC Class Codes: H01L 2924/01011 : Sodium [Na]
• CPC Class Codes: H01L 2924/01013 : Aluminum [Al]
• CPC Class Codes: H01L 2924/01014 : Silicon [Si]
• CPC Class Codes: H01L 2924/01015 : Phosphorus [P]
• CPC Class Codes: H01L 2924/01018 : Argon [Ar]
• CPC Class Codes: H01L 2924/01019 : Potassium [K]
• CPC Class Codes: H01L 2924/01022 : Titanium [Ti]
• CPC Class Codes: H01L 2924/01024 : Chromium [Cr]
• CPC Class Codes: H01L 2924/01028 : Nickel [Ni]
• CPC Class Codes: H01L 2924/01029 : Copper [Cu]
• CPC Class Codes: H01L 2924/01033 : Arsenic [As]
• CPC Class Codes: H01L 2924/01044 : Ruthenium [Ru]
• CPC Class Codes: H01L 2924/01045 : Rhodium [Rh]
• CPC Class Codes: H01L 2924/01046 : Palladium [Pd]
• CPC Class Codes: H01L 2924/01047 : Silver [Ag]
• CPC Class Codes: H01L 2924/01049 : Indium [In]
• CPC Class Codes: H01L 2924/0105 : Tin [Sn]
• CPC Class Codes: H01L 2924/01073 : Tantalum [Ta]
• CPC Class Codes: H01L 2924/01074 : Tungsten [W]
• CPC Class Codes: H01L 2924/01075 : Rhenium [Re]
• CPC Class Codes: H01L 2924/01078 : Platinum [Pt]
• CPC Class Codes: H01L 2924/01079 : Gold [Au]
• CPC Class Codes: H01L 2924/01082 : Lead [Pb]
• CPC Class Codes: H01L 2924/0132 : Binary Alloys
• CPC Class Codes: H01L 2924/01322 : Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
• CPC Class Codes: H01L 2924/0133 : Ternary Alloys
• CPC Class Codes: H01L 2924/014 : Solder alloys
• CPC Class Codes: H01L 2924/04941 : TiN
• CPC Class Codes: H01L 2924/04953 : TaN
• CPC Class Codes: H01L 2924/05042 : Si3N4
• CPC Class Codes: H01L 2924/0665 : Epoxy resin
• CPC Class Codes: H01L 2924/07802 : not being an ohmic electrical conductor
• CPC Class Codes: H01L 2924/09701 : Low temperature co-fired ceramic [LTCC]
• CPC Class Codes: H01L 2924/10253 : Silicon [Si]
• CPC Class Codes: H01L 2924/10329 : Gallium arsenide [GaAs]
• CPC Class Codes: H01L 2924/12044 : OLED
• CPC Class Codes: H01L 2924/1305 : Bipolar Junction Transistor [BJT]
• CPC Class Codes: H01L 2924/14 : Integrated circuits
• CPC Class Codes: H01L 2924/15311 : being a ball array, e.g. BGA
• CPC Class Codes: H01L 2924/1532 : the connection portion being formed on the die mounting surface of the substrate
• CPC Class Codes: H01L 2924/15787 : Ceramics, e.g. crystalline carbides, nitrides or oxides
• CPC Class Codes: H01L 2924/15788 : Glasses, e.g. amorphous oxides, nitrides or fluorides
• CPC Class Codes: H01L 2924/181 : Encapsulation
• CPC Class Codes: H01L 2924/19041 : being a capacitor
• CPC Class Codes: H01L 2924/19042 : being an inductor
• CPC Class Codes: H01L 2924/19043 : being a resistor
• CPC Class Codes: H01L 2924/3512 : Cracking

Abstract

A semiconductor chip includes a silicon substrate, a first dielectric layer over said silicon substrate, a metallization structure over said first dielectric layer, wherein said metallization structure comprises a first metal layer and a second metal layer over said first metal layer, a second dielectric layer between said first and second metal layers, a passivation layer over said metallization structure and over said first and second dielectric layers, an opening in said passivation layer exposing a pad of said metallization structure, a polymer bump over said passivation layer, wherein said polymer bump has a thickness of between 5 and 25 micrometers, an adhesion/barrier layer on said pad exposed by said opening, over said passivation layer and on a top surface and a portion of sidewall(s) of said polymer bump, a seed layer on said adhesion/barrier layer; and a third metal layer on said seed layer.

Claims

1. A semiconductor chip comprising:

a silicon substrate;

at least one active device in or over said silicon substrate;

a first dielectric layer over said silicon substrate;

a metallization structure over said first dielectric layer, wherein said metallization structure is connected to said at least one active device, and wherein said metallization structure comprises a first metal layer and a second metal layer over said first metal layer;

a second dielectric layer between said first and second metal layers;

a passivation layer over said metallization structure and over said first and second dielectric layers, an opening in said passivation layer exposing a pad of said metallization structure;

a polymer bump over said passivation layer and over said at least one active device, wherein said polymer bump has a thickness of between 5 and 25 micrometers and a width between 5 and 40 micrometers;

an adhesion/barrier layer on said pad exposed by said opening, over said passivation layer and on a top surface and a portion of sidewall(s) of said polymer bump;

a seed layer on said adhesion/barrier layer; and

a third metal layer on said seed layer, wherein the material of said third metal layer is the same as that of said seed layer.

2. The semiconductor chip of claim 1, wherein said first metal layer comprises a copper layer having a thickness of between 0.05 and 2 micrometers.

3. The semiconductor chip of claim 1, wherein said first metal layer comprises an aluminum layer having a thickness of between 0.05 and 2 micrometers.

4. The semiconductor chip of claim 1, wherein said passivation layer comprises a silicon nitride layer having a thickness of more than 0.3 micrometers.

5. The semiconductor chip of claim 1, wherein said seed layer comprises a first gold layer and said third metal layer comprises a second gold layer having a thickness of between 1 and 20 micrometers on said first gold layer.

6. The semiconductor chip of claim 1, wherein said seed layer comprises a first copper layer and said third metal layer comprises a second copper layer having a thickness of between 1 and 20 micrometers on said first copper layer.

7. The semiconductor chip of claim 1, wherein said polymer bump is directly on said passivation layer and directly on a portion of said pad exposed by said opening.

8. The semiconductor chip of claim 1, wherein said polymer bump comprises polyimide.

9. The semiconductor chip of claim 1, wherein said adhesion/barrier layer comprises a titanium-containing layer having a thickness of between 0.02 and 0.8 micrometers.

10. The semiconductor chip of claim 1, wherein said third metal layer over said polymer bump is used to be connected to a glass substrate through an ACF (Anisotropic Conductive Film) or ACP (Anisotropic Conductive Paste).

11. A semiconductor chip comprising:

a silicon substrate;

at least one semiconductor device in or over said silicon substrate;

a first dielectric layer over said silicon substrate;

a metallization structure over said first dielectric layer, wherein said metallization structure is connected to said at least one semiconductor device, and wherein said metallization structure comprises a first metal layer and a second metal layer over said first metal layer;

a second dielectric layer between said first and second metal layers;

a passivation layer over said metallization structure and over said first and second dielectric layers, a first opening in said passivation layer exposing a pad of said metallization structure;

a polymer bump on said passivation layer and on said pad exposed by said first opening, a second opening in said polymer bump exposing said pad, wherein said polymer bump has a thickness of between 5 and 25 micrometers and a width between 10 and 40 micrometers;

an adhesion/barrier layer on said pad exposed by said second opening and on a top surface of said polymer bump;

a seed layer on said adhesion/barrier layer; and

a third metal layer on said seed layer, wherein the material of said third metal layer is the same as that of said seed layer.

12. The semiconductor chip of claim 11, wherein said first metal layer comprises a copper layer having a thickness of between 0.05 and 2 micrometers.

13. The semiconductor chip of claim 11, wherein said first metal layer comprises an aluminum layer having a thickness of between 0.05 and 2 micrometers.

14. The semiconductor chip of claim 11, wherein said passivation layer comprises a silicon nitride layer having a thickness of more than 0.3 micrometers.

15. The semiconductor chip of claim 11, wherein said seed layer comprises a first gold layer and said third metal layer comprises a second gold layer having a thickness of between 1 and 20 micrometers on said first gold layer.

16. The semiconductor chip of claim 11, wherein said seed layer comprises a first copper layer and said third metal layer comprises a second copper layer having a thickness of between 1 and 20 micrometers on said first copper layer.

17. The semiconductor chip of claim 11, wherein said polymer bump comprises polyimide.

18. The semiconductor chip of claim 11, wherein said adhesion/barrier layer comprises a titanium-containing layer having a thickness of between 0.02 and 0.8 micrometers.

19. The semiconductor chip of claim 11, wherein said third metal layer over said polymer bump is used to be connected to a glass substrate through an ACF (Anisotropic Conductive Film) or ACP (Anisotropic Conductive Paste).

20. The semiconductor chip of claim 11, wherein said third metal layer over said polymer bump is used to be connected to another semiconductor chip.