Wafer-level encapsulation and sealing of electrostatic transducers

• US 20080054759A1
• Filed: 08/10/2007
• Published: 03/06/2008
• Est. Priority Date: 08/11/2006
• Status: Abandoned Application

• Current Assignee: Georgia Tech Research Corporation (University System of Georgia)
• Original Assignee: Georgia Tech Research Corporation (University System of Georgia)
• Inventors: Anaraki, Siavash, Ayazi, Farrokh
• Application Number:
  US11/891,393
• Publication Number:
  US 20080054759A1
• Time in Patent Office: Days
• US Class Current: 310/309
• CPC Class Codes: B81C 1/0023 Packaging together an electronic processing unit die and a micromechanical structure die MEMS packages B81B7/0032; MEMS packaging processes B81C1/00261
• CPC Class Codes: H03H 3/0073 Integration with other electronic structures
• CPC Class Codes: H03H 9/1057 for microelectro-mechanical devices
• CPC Class Codes: H03H 9/2426 in combination with other electronic elements

Abstract

Disclosed are encapsulated microelectromechanical devices that are integrated with integrated circuit devices in the same substrate. Exemplary microelectromechanical apparatus comprises a substrate, one or more movable microelectromechanical elements formed in the substrate, and one or more stationary elements that are electrically operative elements of the apparatus and that form a protective layer for the movable microelectromechanical elements. Reduced to practice devices include acoustic resonators whose stationary electrodes also encapsulate the resonators. CMOS integrated circuit devices may be formed on the substrate beside or on top of the microelectromechanical devices.

Claims

1. Microelectromechanical apparatus, comprising:

a substrate;

one or more movable microelectromechanical elements formed in the substrate; and

one or more stationary elements that comprise electrically operative elements of the apparatus and that comprise a protective layer for the movable microelectromechanical elements.

2. The apparatus recited in claim 1 which comprises an electrostatic micromechanical resonator.

3. The apparatus recited in claim 2 wherein the stationary elements are sense and drive electrodes of the resonator.

4. The apparatus recited in claim 1 wherein the stationary elements cover the movable microelectromechanical elements on sides and top thereof and are separated therefrom by narrow gaps realized using a sacrificial layer.

5. The apparatus recited in claim 4 wherein the stationary elements have openings in them for sacrificial layer removal.

6. The apparatus recited in claim 5 wherein the openings in the stationary elements are closed by a nonconformal thin film.

7. The apparatus recited in claim 5 wherein the stationary elements completely cover the top surface of the movable elements.

8. The apparatus recited in claim 1 wherein the nonconformal thin film is a PECVD insulator film such as silicon dioxide or silicon nitride.

9. The apparatus recited in claim 1 further comprising a substantially impermeable thin film disposed on top of the sealed stationary elements to maintain a high level of vacuum and/or hermeticity for the encapsulated movable elements.

10. The apparatus recited in claim 9 wherein the substantially impermeable film is an evaporated metal film.

11. The apparatus recited in claim 1 wherein the impermeable film is a CMOS-compatible insulating thin film.

12. The apparatus recited in claim 11 wherein the CMOS-compatible insulating thin film comprises LPCVD silicon dioxide, silicon nitride, or polysilicon.

13. The apparatus recited in claim 1 further comprising one or more integrated circuit devices formed on the substrate beside or on top of the apparatus.

14. Acoustic resonator apparatus, comprising:

a silicon resonating micromechanical element formed in a substrate; and

one or more stationary electrodes separated from the resonating element by narrow capacitive gaps, wherein the electrodes extend on top of the resonating element to encapsulate it.

15. The apparatus recited in claim 14 wherein the electrodes are made of polycrystalline silicon.

16. The apparatus recited in claim 14 wherein the electrodes are sealed by a nonconformal thin film.

17. The apparatus recited in claim 16 wherein the nonconformal sealing film comprises an insulating PECVD thin film.

18. The apparatus recited in claim 14 further comprising a substantially impermeable film covering the nonconformal sealing film.

19. Microelectromechanical apparatus, comprising:

a substrate; and

a microelectromechanical structure formed in the substrate comprising one or more top electrodes, which electrodes encapsulate the apparatus.

20. The apparatus recited in claim 19 further comprising one or more integrated circuit devices formed on the substrate beside or on top of the microelectromechanical structure.