Magnetic sensor with offset magnetic field

• US 20080054897A1
• Filed: 04/21/2007
• Published: 03/06/2008
• Est. Priority Date: 10/21/2004
• Status: Active Grant

• Current Assignee: Ernst-Dieter Weissenberger, Guenther Crolly, Rolf Schaefer, Thorsten Muehge
• Original Assignee: Ernst-Dieter Weissenberger, Guenther Crolly, Rolf Schaefer, Thorsten Muehge
• Inventors: Schaefer, Rolf, Muehge, Thorsten, Crolly, Guenther, Weissenberger, Ernst-Dieter
• Granted Patent: US 7,710,113 B2
• Time in Patent Office: Days
• US Class Current: 324/252
• CPC Class Codes: G01R 33/09 Magnetoresistive devices

Abstract

A method, a magnetic field sensor, and an electronic device measure and determine the magnitude and/or the direction of a magnetic field. The magnetic sensor is based on at least a first magnetoresistive-layered structure having an electric resistance depending on the magnitude of the magnetic field. The magnetic sensor generates at least a first offset magnetic field. The magnitude and the direction of the offset magnetic field can be modified to compensate the magnetic field. The electric resistance of the magnetoresistive-layered structure depends on the superposition of magnetic field and offset magnetic field. A maximum electric resistance indicates that the magnetic field is compensated by the offset magnetic field. In this case the magnitude of the magnetic field corresponds to the magnitude of the offset magnetic field, and the direction of the magnetic field is given by the reversed direction of the offset magnetic field.

Claims

1. A magnetic field sensor for measuring an external magnetic field, comprising:

a mechanism to generate a first offset magnetic field; and

,

a first magnetoresistive-layered structure having an electrical resistance depending on a magnitude of a first magnetic field, the first magnetic field comprising components of the external magnetic field and components of the first offset magnetic field.

2. The magnetic field sensor of claim 1, wherein the mechanism comprises:

a first sub-mechanism to generate a first modifiable component of the first offset magnetic field and having a first direction; and

,

a second sub-mechanism to generate a second modifiable component of the first offset magnetic field and having a second direction.

3. The magnetic field sensor of claim 1, wherein the mechanism comprises at least one of:

a permanent magnetic element, a ferromagnetic element, an inductive element, and an electrically conductive element.

4. The magnetic field sensor of claim 1, wherein the mechanism comprises a soft magnetic element arranged near the first magnetoresistive-layered structure, the soft magnetic element adapted to enhance a magnetic field induced by an electric current flowing through the first magnetoresistive-layered structure, and further adapted to be saturated by the magnetic field.

5. The magnetic field sensor of claim 1, further comprising a second magnetoresistive-layered structure, the first and the second magnetoresistive layered structures arranged in a first bridge circuit and exhibiting a magnetoresistive effect.

6. The magnetic field sensor of claim 5, wherein the first offset magnetic field has a substantially equal effect on both the first and the second magnetoresistive-layered structures.

7. The magnetic field sensor of claim 5, wherein the mechanism is to further generate a second offset magnetic field, and wherein the first offset magnetic field has a first effect on the first magnetoresistive-layered structure and the second offset magnetic field has a second effect on the second magnetoresistive-layered structure different than the first effect.

8. The magnetic field sensor of claim 5, further comprising a third magnetoresistive-layered structure and a fourth magnetoresistive-layered structure, the first, the second, the third, and the fourth magnetoresistive-layered structures arranged in the first bridge structure, and the third and the fourth magnetoresistive-layered structures comprising a soft magnetic element adapted to screen at least one of the external magnetic field and the first offset magnetic field.

9. The magnetic field sensor of claim 8, further comprising a first soft magnetic planar structure and a second soft magnetic planar structure separated from one another by a first elongated gap, the first magnetoresistive-layered structure positioned along the first elongated gap.

10. The magnetic field sensor of claim 9, further comprising a fifth magnetoresistive-layered structure and a sixth magnetoresistive-layered structure, and a third soft magnetic planar structure and a fourth soft magnetic planar structured separated from one another by a second elongated gap, a direction of the second elongated gap substantially perpendicular to a direction of the first elongated gap, the fifth and the sixth magnetoresistive-layered structures positioned along the second elongated gap and arranged in a second bridge circuit.

11. The magnetic field sensor of claim 1, wherein a magnitude of the first offset magnetic field is substantially larger than a magnitude of the external magnetic field.

12. A magnetic field sensor for measuring an external magnetic field, comprising:

means for generating a first offset magnetic field; and

,

a first magnetoresistive-layered structure having an electrical resistance depending on a magnitude of a first magnetic field, the first magnetic field comprising components of the external magnetic field and components of the first offset magnetic field.

13. A method for measuring an external magnetic field by using a magnetic field sensor having a first magnetoresistive-layered structure, comprising:

generating a first offset magnetic field;

measuring an electrical resistance of the first magnetoresistive-layered structure, the electrical resistance depending on a magnitude of a first magnetic field, the first magnetic field having components of the external magnetic field and components of the first offset magnetic field; and

,

determining the external magnetic field based on the first offset magnetic field and the electrical resistance.

14. The method of claim 13, further comprising:

measuring an electrical resistance of the first magnetoresistive-layered structure during modification of a first component of the first magnetic field, the first component having a first direction;

measuring an electrical resistance of the first magnetoresistive-layered structure during modification of a second component of the first magnetic field, the second component having a second direction; and

,

determining at least one of a magnitude and a direction of the external magnetic field by determining a magnitude of each of the first and the second components of the first magnetic field for which the electrical resistance of the first magnetoresistive-layered structure is one of maximal and a predefined value.