Light Emitting Diode and Method of Making the Same

• US 20080057603A1
• Filed: 11/07/2007
• Published: 03/06/2008
• Est. Priority Date: 06/10/2004
• Status: Abandoned Application

• Current Assignee: Chih-Sung Chang, Pai-Hsiang Wang, Tzer-Perng Chen
• Original Assignee: Chih-Sung Chang, Pai-Hsiang Wang, Tzer-Perng Chen
• Inventors: Wang, Pai-Hsiang, Chang, Chih-Sung, Chen, Tzer-Perng
• Application Number:
  US11/936,613
• Publication Number:
  US 20080057603A1
• Time in Patent Office: Days
• US Class Current: 438/27
• CPC Class Codes: H01L 2224/48463 the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
• CPC Class Codes: H01L 2224/49107 on the semiconductor or solid-state body
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/405 Reflective materials
• CPC Class Codes: H01L 33/46 Reflective coating, e.g. dielectric Bragg reflector
• CPC Class Codes: H01L 33/641 characterized by the materials

Abstract

A light emitting diode (LED) and a method of making the same are disclosed. The present invention is featured in that the LED comprises a transparent heat-conductive glue, a reflective layer, and a carrier, etc, wherein the transparent heat-conductive glue is used to adhere the epitaxial structure and the carrier of the LED; the reflective layer can make the light emitted by the epitaxial structure to be reflected more efficiently; and the carrier is used to enhance the heat-dissipation effect of the LED. Moreover, the transparent heat-conductive glue and the reflective layer can be replaced with one single adhesive reflective layer having functions of adhesion and reflection simultaneously.

Claims

1. A method of making an LED, comprising:

providing a carrier capable of dissipating energy;

providing an epitaxial structure comprising a substrate and a plurality of III-V compound semiconductor epitaxial layers thereby light is generated;

thinning the substrate to a predetermined thickness; and

attaching the carrier to the substrate.

2. The method of making the LED according to claim 1, wherein the substrate is thinned by polishing or etching a portion of the substrate.

3. The method of making the LED according to claim 1, wherein the predetermined thickness is no more than 50 μ

m.

4. The method of making the LED according to claim 1, wherein the material of the carrier is selected from a group consisting of silicon, GaN, AlN, diamond, and SiC.

5. The method of making the LED according to claim 1, wherein the material of the carrier is selected from a group consisting of copper, silver, aluminum, and gold.

6. The method of making the LED according to claim 1, wherein the carrier is attached to the thinned substrate of the epitaxial structure by an adhesive layer.

7. The method of making the LED according to claim 1, further comprising the step of providing a reflective layer between the substrate and the carrier.

8. The method of making the LED according to claim 7, wherein the material of the reflective layer is selected from a group consisting of silver, gold, and aluminum.

9. The method of making the LED according to claim 6, wherein the adhesive layer is a glue layer.

10. The method of making the LED according to claim 9, wherein the adhesive layer is a transparent heat-conductive glue layer.

11. The method of making the LED according to claim 1, wherein the substrate is a growth substrate where the plurality of III-V compound semiconductor epitaxial layers is grown upon.