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Hafnium aluminium oxynitride high-K dielectric and metal gates

  • US 20080057659A1
  • Filed: 08/31/2006
  • Published: 03/06/2008
  • Est. Priority Date: 08/31/2006
  • Status: Abandoned Application
First Claim
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1. A method, comprising:

  • forming, using atomic layer deposition, a HfAlON dielectric layer on a substrate; and

    forming a metal gate on the substrate.

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