Hafnium aluminium oxynitride high-K dielectric and metal gates

• US 20080057659A1
• Filed: 08/31/2006
• Published: 03/06/2008
• Est. Priority Date: 08/31/2006
• Status: Abandoned Application

• Current Assignee: Micron Technology, Inc.
• Original Assignee: Micron Technology, Inc.
• Inventors: Bhattacharyya, Arup, Ahn, Kie Y., Forbes, Leonard
• Application Number:
  US11/514,558
• Publication Number:
  US 20080057659A1
• Time in Patent Office: Days
• US Class Current: 438/381
• CPC Class Codes: C23C 16/0227 by cleaning or etching
• CPC Class Codes: C23C 16/308 Oxynitrides
• CPC Class Codes: C23C 16/34 Nitrides C23C16/303 takes precedence
• CPC Class Codes: C23C 16/40 Oxides
• CPC Class Codes: C23C 16/45531 specially adapted for making ternary or higher compositions
• CPC Class Codes: C23C 16/56 After-treatment
• CPC Class Codes: H01L 21/02178 the material containing aluminium, e.g. Al2O3
• CPC Class Codes: H01L 21/02181 the material containing hafnium, e.g. HfO2
• CPC Class Codes: H01L 21/02194 the material containing more than one metal element
• CPC Class Codes: H01L 21/022 the layer being a laminate, i.e. composed of sublayers, e.g. stacks of alternating high-k metal oxides adhesion layers or buffer layers H01L21/02304, H01L21/02362
• CPC Class Codes: H01L 21/0223 formation by oxidation, e.g. oxidation of the substrate
• CPC Class Codes: H01L 21/02255 formation by thermal treatment H01L21/02252 takes precedence; after treatment of an insulating film H01L21/3105 and subgroups
• CPC Class Codes: H01L 21/0228 deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
• CPC Class Codes: H01L 21/02332 into an oxide layer, e.g. changing SiO to SiON
• CPC Class Codes: H01L 21/0234 treatment by exposure to a plasma
• CPC Class Codes: H01L 21/28194 by deposition, e.g. evaporation, ALD, CVD, sputtering, laser deposition H01L21/28202 takes precedence
• CPC Class Codes: H01L 21/28202 in a nitrogen-containing ambient, e.g. nitride deposition, growth, oxynitridation, NH3 nitridation, N2O oxidation, thermal nitridation, RTN, plasma nitridation, RPN
• CPC Class Codes: H01L 21/28229 by deposition of a layer, e.g. metal, metal compound or poysilicon, followed by transformation thereof into an insulating layer
• CPC Class Codes: H01L 21/3141 Deposition using atomic layer deposition techniques [ALD]
• CPC Class Codes: H01L 21/3143 composed of alternated layers or of mixtures of nitrides and oxides or of oxinitrides, e.g. formation of oxinitride by oxidation of nitride layers
• CPC Class Codes: H01L 21/31604 : Deposition from a gas or vapour H01L21/31691, H01L21/31695 take precedence
• CPC Class Codes: H01L 21/31645 : Deposition of Hafnium oxides, e.g. HfO2
• CPC Class Codes: H01L 21/318 : composed of nitrides
• CPC Class Codes: H01L 29/4908 : for thin film semiconductor, e.g. gate of TFT
• CPC Class Codes: H01L 29/517 : the insulating material comprising a metallic compound, e.g. metal oxide, metal silicate H01L29/518 takes precedence
• CPC Class Codes: H01L 29/518 : the insulating material containing nitrogen, e.g. nitride, oxynitride, nitrogen-doped material
• CPC Class Codes: H01L 29/7833 : with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's for thin film transistors H01L29/78618

Abstract

Electronic apparatus and methods of forming the electronic apparatus include a hafnium aluminum oxynitride film on a substrate for use in a variety of electronic systems. The hafnium aluminum oxynitride film may be structured as one or more monolayers. The hafnium aluminum oxynitride film may be formed using atomic layer deposition. Metal electrodes may be disposed on a dielectric containing a hafnium aluminum oxynitride film.

Claims

1. A method, comprising:

forming, using atomic layer deposition, a HfAlON dielectric layer on a substrate; and

forming a metal gate on the substrate.

2. The method of claim 1, wherein forming the metal gate includes forming the metal gate on and contacting the dielectric layer.

3. The method of claim 2, wherein forming a metal gate includes forming a metal gate of a transistor.

4. The method of claim 3, wherein forming a metal gate of a transistor includes forming a gate of a silicon MOSFET.

5. The method of claim 3, wherein forming a metal gate of a transistor includes forming a gate of a germanium MOSFET.

6. The method of claim 3, wherein forming a metal gate of a transistor includes forming a gate of a SiGe MOSFET.

7. The method of claim 2, wherein forming a metal gate includes forming an electrode of a capacitor.

8. The method of claim 2, wherein forming the dielectric layer includes structuring a memory storage capacitor.

9. The method of claim 8, wherein forming the dielectric layer and forming the metal gate include connecting the dielectric layer and metal electrode in an analog integrated circuit.

10. The method of claim 2, wherein forming the metal gate includes structuring the metal gate as a capacitor in a RF integrated circuit.

11. The method of claim 2, wherein forming the dielectric layer structured as a tunnel gate insulator in a flash memory, and wherein forming the metal gate includes forming a floating gate in the flash memory.

12. The method of claim 2, wherein forming the dielectric layer structured as an inter-gate insulator in a flash memory, and wherein forming the metal gate includes structuring the metal gate as a control gate in the flash memory.

13. The method of claim 2, wherein forming the dielectric layer includes forming a nanolaminate dielectric in a NROM flash memory.

14. The method of claim 1, wherein forming a metal gate on and contacting the dielectric layer includes forming the metal gate by atomic layer deposition.

15. A method, comprising:

forming, using atomic layer deposition, a HfAlON dielectric layer on a substrate; and

substituting a desired metal material for previously disposed substitutable material to form a metal gate on the substrate.

16. The method of claim 15, wherein forming the dielectric layer includes forming a nanolaminate dielectric in a NROM flash memory.

17. The method of claim 15, wherein forming the dielectric layer structured as a tunnel gate insulator in a flash memory, and wherein forming the metal gate includes forming a floating gate in the flash memory.

18. The method of claim 15, wherein substituting a desired metal material includes substituting aluminum for carbon.

19. The method of claim 15, wherein substituting a desired metal material includes substituting tanatalum for carbon.

20. A method comprising:

forming a dielectric layer on a substrate, the dielectric layer including a layer of HfAlON, the layer of HfAlON formed using atomic layer deposition including;

forming a layer of HfAlO using atomic layer deposition;

nitridizing the HfAlO to form HfAlON; and

substituting a desired metal material for previously disposed substitutable material to form a metal gate on the substrate.

21. The method of claim 20, wherein substituting the desired metal includes forming a metal gate on and contacting the dielectric layer.

22. The method of claim 20, wherein nitridizing the HfAlO to form HfAlON includes nitridizing at high temperatures.

23. The method of claim 20, wherein nitridizing the HfALO to form HfAlON includes introducing nitrogen by a microwave plasma.

24. The method of claim 20, wherein nitridizing the HfAlO to form HfAlON includes introducing nitrogen by a NH₃ anneal.

25. The method of claim 20, wherein forming a layer of HfAlO includes:

forming a layer of hafnium oxide by atomic layer deposition;

forming a layer of aluminum oxide by atomic layer deposition; and

annealing the layer of hafnium oxide with the layer of aluminum oxide to form HfAlO.

26. A method comprising:

forming a dielectric layer on a substrate, the dielectric layer including a layer of HfAlON, the layer of HfAlON formed using atomic layer deposition including;

forming a layer of HfN by atomic layer deposition;

forming a layer of AlN by atomic layer deposition;

annealing the layer of HfN with the layer of AlN;

oxidizing the layers of HfN and LaN to form HfAlON; and

forming a metal gate on the substrate.

27. The method of claim 26, wherein forming a metal gate includes the metal gate being on and contacting the dielectric layer.

28. The method of claim 26, wherein the annealing and the oxidizing are performed together.

29. The method of claim 26, wherein the layer of HfN and the layer of AlN are annealed and oxidized by rapid thermal oxidation to form HfAlON.

30. The method of claim 26, wherein the method includes forming alternating layers of HfN and AlN prior to annealing.

31. A method comprising:

forming a dielectric layer on a substrate, the dielectric layer including a layer of HfAlON, the layer of HfAlON formed using atomic layer deposition including;

forming a layer of HfON by atomic layer deposition;

forming a layer of AlON by atomic layer deposition;

annealing the layer of HfON with the layer of AlON to form HfAlON; and

forming a metal electrode on and contacting the dielectric layer.

32. The method of claim 31, wherein the method includes forming alternating layers of HfON and AION prior to annealing.

33. A method comprising:

forming a dielectric layer on a substrate, the dielectric layer including a layer of HfAlON, the layer of HfAlON formed using atomic layer deposition; and

forming a metal electrode on and contacting the dielectric layer, the metal electrode formed by;

forming a layer of substitutable material on the dielectric layer, the substitutable material including one or more materials selected from the group consisting of carbon, polysilicon, germanium, and silicon-germanium; and

substituting a desired metal material for the substitutable material to provide the metal electrode on the dielectric layer.

34. The method of claim 33, wherein the method includes forming a layer of the desired metal material on the layer of substitutable material and heating the layers at a temperature below the eutectic temperature of the desired metal material.

35. The method of claim 33, wherein forming a layer of substitutable material includes forming a carbon structure.

36. The method of claim 35, wherein substituting a desired metal material for the substitutable material includes substituting for the carbon structure one or more materials from the group consisting of gold, silver, a gold alloy, a silver alloy, copper, platinum, rhenium, ruthenium, rhodium, nickel, osmium, palladium, iridium, and cobalt.

37. The method of claim 33, wherein forming a layer of substitutable material includes forming one or more of polysilicon, germanium, or silicon-germanium.

38. The method of claim 37, wherein substituting a desired metal material for the substitutable material includes substituting for the carbon structure one or more materials from the group consisting of aluminum, copper, silver, gold, and alloys of silver and gold.