METHOD AND APPARATUS FOR MANAGING BAD RUN-TIME BLOCK IN MLC FLASH MEMORY

• US 20080059835A1
• Filed: 05/01/2007
• Published: 03/06/2008
• Est. Priority Date: 09/04/2006
• Status: Active Grant

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electronics Co. Ltd.
• Inventors: YOON, Song-ho
• Granted Patent: US 7,721,147 B2
• Time in Patent Office: Days
• US Class Current: 714/6
• CPC Class Codes: G11C 11/5628 Programming or writing circuits; Data input circuits
• CPC Class Codes: G11C 29/00 Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
• CPC Class Codes: G11C 29/76 using address translation or modifications

Abstract

A method and apparatus are provided for managing a bad run-time block in a multi-level cell flash memory. The apparatus includes a buffer-allotting module which allots a buffer in which data programmed in a least significant bit (LSB) of a cell is temporarily stored, a data-copying module which copies the data programmed in the LSB of the cell to the allotted buffer, and a bad-block-managing module which programs the copied data to a free block if a program error occurs in a page of the cell.

Claims

1. An apparatus for managing a bad run-time block in a multi-level cell (MLC) flash memory, the apparatus comprising:

a buffer-allotting module which allots a buffer in which data programmed in a least significant bit (LSB) of a cell is temporarily stored;

a data-copying module which copies the data programmed in the LSB of the cell to the buffer allotted by the buffer-allotting module; and

a bad-block-managing module which programs the data copied by the data-copying module in a free block if a program error occurs in a page of the cell.

2. The apparatus of claim 1, further comprising a data buffer which stores data to be programmed in a page of the cell.

3. The apparatus of claim 1, wherein the bad-block-managing module is allotted with the free block if an error occurs by determining whether a program error has occurred on the page.

4. The apparatus of claim 1, wherein the bad-block-managing module initializes an index for copying the page.

5. The apparatus of claim 1, wherein the bad-block-managing module programs data by determining whether the page included in the bad block is an LSB or a most significant bit.

6. The apparatus of claim 2, wherein the bad-block-managing module copies data of the page in which the program error has occurred to the free block with reference to the data buffer.

7. The apparatus of claim 6, wherein the page in which the program error has occurred is a most significant bit of the cell.

8. The apparatus of claim 1, wherein the buffer-allotting module maintains the buffer until the data programmed by the bad-block-managing module is completed being programmed.

9. A method of managing a bad run-time block in a multi-level cell (MLC) flash memory, the method comprising:

allotting a buffer in which data programmed in a least significant bit (LSB) of a cell is temporarily stored;

copying the data programmed in the LSB of the cell to the buffer allotted; and

programming the data copied to the buffer to a free block when a program error occurs in a page of the cell.

10. The method of claim 9, wherein a free block is allotted if an error occurs by determining whether a program error has occurred in a page during the programming.

11. The method of claim 9, wherein an index for copying a page is initialized during the programming.

12. The method of claim 9, wherein data is programmed by determining whether the page included in the bad block is an LSB or a most significant bit (MSB) during the programming.

13. The method of claim 9, wherein data of the page in which the program error has occurred is copied to the free block with reference to data buffer during the programming.

14. The method of claim 13, wherein the page in which the program error has occurred is a most significant bit of the cell during the programming.

15. The method of claim 9, wherein the buffer is maintained until the programming of the data is completed.

16. A computer readable recording medium having recorded thereon a program for executing a method of managing a bad run-time block in a multi-level cell (MLC) flash memory, the method comprising:

allotting a buffer in which data programmed in a least significant bit (LSB) of a cell is temporarily stored;

copying the data programmed in the LSB of the cell to the buffer allotted; and

programming the data copied to the buffer to a free block if a program error occurs in a page of the cell.