Low power electrically alterable nonvolatile memory cells and arrays
First Claim
1. A method of providing a memory cell comprising:
- providing a body of a semiconductor material having a first conductivity type;
arranging a filter of a conductor-filter system in contact with a first conductor of the conductor-filter system;
arranging at least portion of a second conductor of a conductor-insulator system in contact with the filter;
arranging a first insulator of the conductor-insulator system in contact with the second conductor at an interface;
arranging a first region spaced from the second conductor;
arranging a channel of the body between the first region and the second conductor;
arranging a second insulator adjacent to the first region;
arranging a charge storage region between the first and the second insulators;
arranging a first portion of a word-line adjacent to and insulated from the charge storage region; and
arranging a second portion of the word-line adjacent to and insulated from the body.
3 Assignments
0 Petitions
Accused Products
Abstract
A method of providing a memory cell includes providing a body of a semiconductor material having a first conductivity type, arranging a filter of a conductor-filter system in contact with a first conductor of the conductor-filter system, arranging at least portion of a second conductor of a conductor-insulator system in contact with the filter, arranging a first insulator of the conductor-insulator system in contact with the second conductor at an interface, arranging a first region spaced from the second conductor, arranging a channel of the body between the first region and the second conductor, arranging a second insulator adjacent to the first region, arranging a charge storage region between the first and the second insulators, arranging a first portion of a word-line adjacent to and insulated from the charge storage region, and arranging a second portion of the word-line adjacent to and insulated from the body.
103 Citations
25 Claims
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1. A method of providing a memory cell comprising:
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providing a body of a semiconductor material having a first conductivity type;
arranging a filter of a conductor-filter system in contact with a first conductor of the conductor-filter system;
arranging at least portion of a second conductor of a conductor-insulator system in contact with the filter;
arranging a first insulator of the conductor-insulator system in contact with the second conductor at an interface;
arranging a first region spaced from the second conductor;
arranging a channel of the body between the first region and the second conductor;
arranging a second insulator adjacent to the first region;
arranging a charge storage region between the first and the second insulators;
arranging a first portion of a word-line adjacent to and insulated from the charge storage region; and
arranging a second portion of the word-line adjacent to and insulated from the body. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25)
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Specification