Examination apparatus for biological sample and chemical sample
First Claim
1. An unpackaged semiconductor integrated circuit device formed to be used in a solution, and having an SOI substrate in which a support substrate, a buried insulating layer, and a semiconductor layer are stacked thereon in order, and an integrated circuit is formed on said semiconductor layer, comprising:
- a guard ring layer which is formed with an n-type impurity diffusion layer in said semiconductor layer and which surrounds a formation area of said integrated circuit, said guard ring reaching said buried insulating layer; and
a floating layer which is formed with an p-type impurity diffusion layer in said semiconductor layer and which surrounds said guard ling layer, an inside surface of said floating layer being in contact with an outside surface of said guard ring layer, and said floating layer reaching an outer surface of said semiconductor layer, wherein said guard ring is set to a maximum potential of said integrated circuit, and wherein, when said unpackaged semiconductor integrated circuit device is used, said outer surface of said semiconductor layer is exposed to said solution.
1 Assignment
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Accused Products
Abstract
A wireless sensor chip suitable for the compact, high-sensitive, and low-cost examination apparatus for easily examining a biological material such as gene at low cost is provided. A sensor chip is formed on an SOI substrate, and an n type semiconductor layer on which a PMOS transistor is formed and a p type semiconductor layer on which an nMOS transistor is formed are isolated by a pn junction. Therefore, the p type semiconductor layer at the outermost portion (chip edge portion to be in contact with solution) is set to floating, and the maximum potential and the minimum potential of the chip are supplied to an n type semiconductor layer and a p type semiconductor layer inside the outermost portion, respectively. Also, the chip is covered with an ion impermeable insulating film for reducing the penetration of positive ions through the oxide layer.
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Citations
8 Claims
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1. An unpackaged semiconductor integrated circuit device formed to be used in a solution, and having an SOI substrate in which a support substrate, a buried insulating layer, and a semiconductor layer are stacked thereon in order, and an integrated circuit is formed on said semiconductor layer, comprising:
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a guard ring layer which is formed with an n-type impurity diffusion layer in said semiconductor layer and which surrounds a formation area of said integrated circuit, said guard ring reaching said buried insulating layer; and
a floating layer which is formed with an p-type impurity diffusion layer in said semiconductor layer and which surrounds said guard ling layer, an inside surface of said floating layer being in contact with an outside surface of said guard ring layer, and said floating layer reaching an outer surface of said semiconductor layer, wherein said guard ring is set to a maximum potential of said integrated circuit, and wherein, when said unpackaged semiconductor integrated circuit device is used, said outer surface of said semiconductor layer is exposed to said solution. - View Dependent Claims (2, 3, 4)
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5. An unpackaged semiconductor integrated circuit device formed to be used in a solution, and having an SOI substrate in which a support substrate, a buried insulating layer, and a semiconductor layer are stacked thereon in order, and an integrated circuit being formed on said semiconductor layer, comprising:
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a guard ring layer which is formed with an p-type impurity diffusion layer in said semiconductor layer, and which surrounds a formation area of said integrated circuit, said guard ring reaching said buried insulating layer; and
a floating layer which is formed with an n-type impurity diffusion layer in said semiconductor layer, and which surrounds said guard ling layer, wherein an inside surface of said floating layer is in contact with an outside surface of said guard ring layer, said floating layer reaching an outer surface of said semiconductor layer, wherein said guard ring is set to a minimum potential of said integrated circuit, and wherein, when said unpackaged semiconductor integrated circuit device is used, said outer surface of said semiconductor layer is exposed to said solution. - View Dependent Claims (6, 7, 8)
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Specification