Thermal compensation in semiconductor lasers
First Claim
1. A method of compensating for thermally induced patterning effects in a semiconductor laser, said method comprising:
- driving an active region of said semiconductor laser with a laser driving current ID sufficient to generate stimulated emission of photons in said active region;
generating a modulated laser output signal Pλ
by driving said active region of said semiconductor laser with relatively high magnitude and relatively low magnitude laser driving currents ID;
heating said active region of semiconductor laser with a heating element driving current IH to generate heat in a heating element structure thermally coupled to said active region; and
controlling a junction temperature TJ of said active region by driving said heating element with relatively high magnitude and relatively low magnitude heating element driving currents IH, wherein said control of said laser driving current ID and said control of said heating element driving current IH are such thatsaid heating element driving current IH is at said relatively high magnitude when said laser driving current ID is at a relatively low magnitude for at least a portion of a duration over which said heating element is driven by said heating element driving current IH, andsaid heating element driving current IH decreases from said relatively high magnitude to said relatively low magnitude at a time prior to an increase in said laser driving current ID from said relatively low magnitude to said relatively high magnitude.
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Abstract
The present invention relates to methods for modulating a semiconductor laser and wavelength matching to a wavelength converter using monolithic micro-heaters integrated in the semiconductor laser. The present invention also relates to wavelength matching and stabilization in laser sources in general, without regard to whether the laser is modulated or whether second harmonic generation is utilized in the laser source. According to one embodiment of the present invention, a method of compensating for thermally induced patterning effects in a semiconductor laser is provided where the laser'"'"'s heating element driving current IH is set to a relatively high magnitude when the laser'"'"'s driving current ID is at a relatively low magnitude. Additional embodiments are disclosed and claimed.
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Citations
20 Claims
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1. A method of compensating for thermally induced patterning effects in a semiconductor laser, said method comprising:
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driving an active region of said semiconductor laser with a laser driving current ID sufficient to generate stimulated emission of photons in said active region; generating a modulated laser output signal Pλ
by driving said active region of said semiconductor laser with relatively high magnitude and relatively low magnitude laser driving currents ID;heating said active region of semiconductor laser with a heating element driving current IH to generate heat in a heating element structure thermally coupled to said active region; and controlling a junction temperature TJ of said active region by driving said heating element with relatively high magnitude and relatively low magnitude heating element driving currents IH, wherein said control of said laser driving current ID and said control of said heating element driving current IH are such that said heating element driving current IH is at said relatively high magnitude when said laser driving current ID is at a relatively low magnitude for at least a portion of a duration over which said heating element is driven by said heating element driving current IH, and said heating element driving current IH decreases from said relatively high magnitude to said relatively low magnitude at a time prior to an increase in said laser driving current ID from said relatively low magnitude to said relatively high magnitude. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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13. A method of compensating for thermally induced patterning effects in a DBR laser diode comprising a wavelength selective region, a phase matching region, and a gain region, said method comprising:
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driving an active region of said semiconductor laser with a laser driving current ID sufficient to generate stimulated emission of photons in said active region; generating a modulated laser output signal Pλ
by driving said active region of said semiconductor laser with relatively high magnitude and relatively low magnitude laser driving currents ID;heating said phase matching region of said DBR laser by applying a heating element driving current IH to a micro-heating element structure extending over at least a portion of said phase matching region to generate heat in said micro-heating element structure; and controlling said laser driving current ID and said heating element driving current IH such that, for at least a portion of a duration over which said heating element is driven by said heating element driving current IH, said heating element driving current IH is at a relatively high magnitude when said laser driving current ID is at said relatively low magnitude and said heating element driving current IH is at a relatively low magnitude when said laser driving current ID is at said relatively high magnitude to compensate at least partially for an increase in optical path length attributable to heat generated in said active region by said laser driving current ID. - View Dependent Claims (14, 15, 16, 17, 18, 19)
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20. A method of compensating for thermally induced patterning effects in a semiconductor laser comprising a semiconductor substrate, an active region, a ridge waveguide, a driving electrode structure, and a micro-heating element structure, wherein:
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said active region is defined within said semiconductor substrate and is configured for stimulated emission of photons under an electrical bias generated by said driving electrode structure; said ridge waveguide is positioned to optically guide said stimulated emission of photons along a longitudinal dimension of said semiconductor laser; said micro-heating element structure comprises a pair of heating element strips extending along said longitudinal dimension of said semiconductor laser; said heating element strips are on opposite sides of said ridge waveguide such that one of said heating element strips extends along one side of said ridge waveguide while a remaining heating element strip extends along another side of said ridge waveguide; and said method comprises driving an active region of said semiconductor laser with a laser driving current ID sufficient to generate stimulated emission of photons in said active region, generating a modulated laser output signal Pλ
by driving said active region of said semiconductor laser with relatively high magnitude and relatively low magnitude laser driving currents ID, heating said active region of semiconductor laser with a heating element driving current IH to generate heat in a heating element structure thermally coupled to said active region, and controlling a junction temperature TJ of said active region by driving said heating element with relatively high magnitude and relatively low magnitude heating element driving currents IH, wherein, for at least a portion of a duration over which said heating element is driven by said heating element driving current IH, said heating element driving current IH is at said relatively high magnitude when said laser driving current ID is at said relatively low magnitude and said heating element driving current IH is at said relatively low magnitude when said laser driving current ID is at said relatively high magnitude.
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Specification