PRECURSORS AND HARDWARE FOR CVD AND ALD

• US 20080063798A1
• Filed: 08/29/2007
• Published: 03/13/2008
• Est. Priority Date: 08/30/2006
• Status: Abandoned Application

• Current Assignee: Applied Materials Incorporated
• Original Assignee: Applied Materials Incorporated
• Inventors: Sermona, Vincent, Jumper, Steve, Nguyen, Son, Kher, Shreyas, Tandon, Sanjeev, Narwankar, Pravin
• Application Number:
  US11/847,158
• Publication Number:
  US 20080063798A1
• Time in Patent Office: Days
• US Class Current: 427/255.394
• CPC Class Codes: C23C 16/34 Nitrides C23C16/303 takes precedence
• CPC Class Codes: C23C 16/405 of refractory metals or yttrium
• CPC Class Codes: C23C 16/4404 Coatings or surface treatment on the inside of the reaction chamber or on parts thereof
• CPC Class Codes: C23C 16/45544 characterized by the apparatus
• CPC Class Codes: C23C 16/45553 characterized by the use of precursors specially adapted for ALD
• CPC Class Codes: C23C 16/45561 Gas plumbing upstream of the reaction chamber
• CPC Class Codes: C23C 16/45582 Expansion of gas before it reaches the substrate

Abstract

The present invention generally comprises an apparatus for depositing high k dielectric or metal gate materials in which toxic, flammable, or pyrophoric precursors may be used. Exhaust conduits may be placed on the liquid precursor or solid precursor delivery cabinet, the gas panel, and the water vapor generator area. The exhaust conduits permit a technician to access the apparatus without undue exposure to toxic, pyrophoric, or flammable gases that may collect within the liquid deliver cabinet, gas panel, and water vapor generator area.

Claims

1. A vapor deposition apparatus, comprising:

a liquid precursor or solid precursor delivery cabinet having an exhaust line coupled therewith;

a gas panel having an exhaust line coupled therewith;

a water vapor generator system having an exhaust line coupled therewith; and

one or more toxic, flammable, or pyrophoric precursor sources.

2. The apparatus of claim 1, further comprising heater rods coupled with a lid of the apparatus.

3. The apparatus of claim 1, further comprising a turbo molecular pump coupled with the apparatus.

4. The apparatus of claim 1, further comprising a chamber, wherein the chamber has a liner coupled therewith.

5. The apparatus of claim 4, wherein the liner comprises stainless steel, quartz, aluminum, sapphire, graphite, or ceramic material.

6. The apparatus of claim 5, wherein the liner is coated with PBN, SiC, quartz, or aluminum.

7. The apparatus of claim 1, wherein the apparatus is an atomic layer deposition apparatus.

8. The apparatus of claim 1, wherein the apparatus is a chemical vapor deposition apparatus.

9. The apparatus of claim 1, further comprising a heat exchanger coupled with the apparatus.

10. The apparatus of claim 1, further comprising a dual zone heated pedestal coupled with the apparatus.

11. A vapor deposition method, comprising:

introducing at least one precursor to an apparatus, the apparatus having a liquid precursor or solid precursor delivery cabinet, a gas panel, and a water vapor generator system, the precursor selected from the group consisting of toxic precursors, flammable precursors, and pyrophoric precursors;

venting precursor gas from at least one of the liquid delivery cabinet, gas panel, or water vapor generator system; and

depositing a layer on a substrate.

12. The method of claim 11, wherein the toxic precursor is selected from the group consisting of AsH₃, GeH₄, SiH₄, NH₃, PH₃, Si₂H₆, B₂H₆, NO, dichlorosilane, hexachlorosilane, and N₂O.

13. The method of claim 11, wherein the flammable precursor is selected from the group consisting of HfCl₄, La(THD)₂, Pr(THD)₃, Pr(N(SiMe₃)₂)₃, La(N(SiMe₃)₂)₃), La(i-Pr-AMD)₃, TAETO, TDMAH, DMAH, and TMAI.

14. The method of claim 11, wherein the flammable precursor is selected from the group consisting of TDEAHf, TDEAZr, TEMAHf, TEMAZr, 4-DMAS, 3-DMAS, TBTDET, TBTEMT, IPTDET, IPTEMT, DMEEDMAA, EBDA, TDEAS, TEMAS, and BTBAS.

15. The method of claim 11, wherein the pyrophoric precursor is selected from the group consisting of Me₃Al, Me₂AlH, and organo-aluminum compounds.

16. The method of claim 11, wherein the precursor is a liquid precursor and further comprising directly injecting the liquid precursor.

17. The method of claim 11, wherein the layer is deposited by atomic layer deposition.

18. The method of claim 11, wherein the layer is deposited by chemical vapor deposition.

19. The method of claim 11, wherein the layer deposited is a high k dielectric layer or a metal gate layer.

20. The method of claim 11, wherein the layer deposited comprises hafnium.