Thermal processing system for curing dielectric films

• US 20080063809A1
• Filed: 09/08/2006
• Published: 03/13/2008
• Est. Priority Date: 09/08/2006
• Status: Active Grant

• Current Assignee: Tokyo Electron Limited
• Original Assignee: Tokyo Electron Limited
• Inventors: Lee, Eric M., Liu, Junjun
• Granted Patent: US 8,956,457 B2
• Time in Patent Office: Days
• US Class Current: 427/558
• CPC Class Codes: H01L 21/02126 the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
• CPC Class Codes: H01L 21/02134 the material comprising hydrogen silsesquioxane, e.g. HSQ
• CPC Class Codes: H01L 21/02137 the material comprising alkyl silsesquioxane, e.g. MSQ
• CPC Class Codes: H01L 21/02203 the layer being porous
• CPC Class Codes: H01L 21/02271 deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition H01L21/02266 takes precedence
• CPC Class Codes: H01L 21/02282 liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
• CPC Class Codes: H01L 21/02345 treatment by exposure to radiation, e.g. visible light
• CPC Class Codes: H01L 21/02348 treatment by exposure to UV light
• CPC Class Codes: H01L 21/3105 After-treatment
• CPC Class Codes: H01L 21/31058 of organic layers
• CPC Class Codes: H01L 21/31612 on a silicon body
• CPC Class Codes: H01L 21/31695 Deposition of porous oxides or porous glassy oxides or oxide based porous glass
• CPC Class Codes: H01L 21/67115 mainly by radiation

Abstract

A thermal processing system and method for curing a dielectric film. The thermal processing system is configured to treat the dielectric film with ultraviolet (UV) radiation and infrared (IR) radiation in order to cure the dielectric film. The thermal processing system can include an array if IR and UV light-emitting devices (LEDs) configured to irradiate a substrate having a low dielectric constant (low-k) film. The method dries the dielectric film to remove contaminants from the film and exposes the dielectric film at a single stage to ultraviolet radiation and IR radiation.

Claims

1. A processing system for treating a dielectric film on a substrate, comprising:

a process chamber configured to facilitate said treatment process;

a substrate holder coupled to said process chamber, and configured to support said substrate in said process chamber;

a temperature control system coupled to said substrate holder and configured to elevate a temperature of said substrate;

a multi-spectrum radiation source coupled to said process chamber, and configured to irradiate said substrate with infrared (IR) radiation and ultraviolet (UV) radiation, said multi-spectrum radiation source including;

an IR radiation source comprising a first array of IR light-emitting devices (LEDs), and

a UV radiation source comprising a second array of UV LEDs; and

a vacuum pumping system coupled to said process chamber, and configured to evacuate said process chamber.

2. The system of claim 1, wherein said first array of said IR LEDs and said second array of said UV LEDs are arranged in a rectangular pattern above said substrate.

3. The system of claim 1, wherein said first array of said IR LEDs and said second array of said UV LEDs are arranged in a circular pattern above said substrate.

4. The system of claim 1, wherein said first array of said IR LEDs and said second array of said UV LEDs are configured to emit light that substantially covers said substrate.

5. The system of claim 1, wherein said first array of said IR LEDs and said second array of said UV LEDs are configured to emit light that partially covers said substrate.

6. The system of claim 1, wherein said substrate holder comprises a rotatable substrate holder configured to rotate said substrate about an axis perpendicular to the substrate plane.

7. The system of claim 1, wherein said IR LEDs comprise an IR wave-band emitter configured to emit light ranging from approximately 1 micron to approximately 30 microns.

8. The system of claim 1, wherein said IR LEDs comprises an IR wave-band emitter configured to emit light ranging from approximately 8 microns to approximately 14 microns.

9. The system of claim 1, wherein said UV LEDs comprise a UV wave-band emitter configured to emit light ranging from approximately 100 nanometers to approximately 600 nanometers.

10. The system of claim 1, wherein said UV LEDs comprise a UV wave-band emitter configured to emit light ranging from approximately 200 nanometers to approximately 400 nanometers.

11. The system of claim 1, wherein said temperature control system comprises a resistive heating element coupled to said substrate holder.

12. The system of claim 11, wherein said thermal treatment device is configured to elevate the temperature of said substrate from approximately 200°

C. to approximately 400°

C.

13. The system of claim 1, further comprising:

a gas supply system coupled to said process chamber, and configured to introduce a process gas to said process chamber.

14. The system of claim 13, wherein said gas supply system is configured to supply an inert gas to said process chamber.

15. The system of claim 13, wherein said gas supply system is configured to supply a reactive gas to said process chamber.

16. The system of claim 13, wherein said gas supply system is configured to introduce said process gas to said process chamber such that a substantially parallel flow of process gas over said substrate is created.

17. The system of claim 1, further comprising:

a remote plasma source coupled to said process chamber, and configured to introduce plasma radicals to said process chamber.

18. The system of claim 1, further comprising:

an inner liner coupled to an interior surface of said process chamber and configured to reduce contamination of said substrate.

19. The system of claim 18, wherein said inner liner is fabricated from one or more of quartz, silicon, silicon nitride, silicon carbide, sapphire, alumina, aluminum nitride, carbon, anodized aluminum, or coated aluminum, or a combination of two or more thereof.

20. The system of claim 1, further comprising:

a drying chamber coupled by a transfer mechanism to the processing chamber.

21. The system of claim 20, further comprising:

a transfer chamber configured to transfer the substrate from the process chamber to the drying chamber.

22. A method for treating a dielectric film, comprising:

drying the dielectric film to remove contaminants from the film; and

exposing the dielectric film at a single stage to ultraviolet radiation and IR radiation.

23. The method of claim 22, further comprising:

heat treating the sample at temperatures between approximately 200°

C. to approximately 400°

C.

24. The method of claim 22, further comprising:

depositing an adhesion promoting film on the dielectric film.

25. The method of claim 22, further comprising:

bombarding the dielectric film with ions