Ultra Hydrophilic Ti-O-C Based Nano Film and Fabrication Method Thereof

• US 20080063895A1
• Filed: 12/30/2004
• Published: 03/13/2008
• Est. Priority Date: 12/30/2004
• Status: Active Grant

• Current Assignee: LG Electronics, Inc. (LG Corporation)
• Original Assignee: LG Electronics, Inc. (LG Corporation)
• Inventors: Jeong, Young-Man, Jun, Hyun-Woo, Jung, Chang-Il
• Granted Patent: US 7,790,246 B2
• Time in Patent Office: Days
• US Class Current: 428/650
• CPC Class Codes: C23C 16/30 Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
• CPC Class Codes: Y10T 428/12493 Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
• CPC Class Codes: Y10T 428/12736 Al-base component
• CPC Class Codes: Y10T 428/24942 including components having same physical characteristic in differing degree
• CPC Class Codes: Y10T 428/24975 No layer or component greater than 5 mils thick

Abstract

An ultra-hydrophilic Ti—O—C based nano-film of which deposition thickness was improved and deposition uniformity was excellent was fabricated by mixing a Ti precursor and a liquid having a low boiling point and a high volatility—at a uniform ratio. The catalyst accelerates a vaporization of the Ti precursor and facilitates the Ti precursor to be injected into a reaction chamber, thereby improving plasma polymerization efficiency.

Claims

1. A method for fabricating an ultra-hydrophilic Ti—

O—

C based nano-film comprising;

positioning a substrate to be surface-treated in a reaction chamber in a vacuum state in which at least one electrode is installed;

introducing into the reaction chamber a Ti precursor gas, a reactive gas selected from air or oxygen, and a volatile catalyst having a low boiling point as a deposition accelerant of Ti;

applying a high voltage to the electrode and thus changing the introduced gases to a plasma state; and

forming a Ti—

O—

C based nano-film on at least one surface of the substrate.

2. The method of claim 1, wherein the volatile catalyst is one selected among DMB (di-methyl butadiene), THF (tetra hydro furan) and Hexane.

3. The method of claim 1, wherein the Ti precursor is titanium tetraisopropoxide [Ti(OC₃H₇)₄].

4. The method of claim 1, wherein the Ti precursor, which is a liquid phase precursor, is vaporized to be introduced into the reaction chamber.

5. The method of claim 1, wherein the substrate to be surface-treated is made of metal.

6. The method of claim 5, wherein a direct current (DC) high voltage is applied to the substrate to be surface-treated.

7. The method of claim 1, wherein the Ti precursor is carried into the reaction chamber by a separate carrier gas.

8. The method of claim 7, wherein the carrier gas is one selected among He, N_{2 or Ar.}

9. The method of claim 1, wherein a ratio of the Ti precursor and the volatile catalyst is 70:

30˜

50;

50.

10. An ultra-hydrophilic Ti—

O—

C based nano-film, as a nano-film formed on a surface of a substrate to be processed, composed of a Ti—

O—

C based compound obtained from a Ti precursor, a reactive gas selected between air and oxygen and a volatile catalyst having a low boiling point as a deposition accelerant of Ti.

11. The nano-film of claim 10, wherein a thickness thereof is 1 to 100 nm.

12. The nano-film of claim 10, wherein the substrate to be processed is a metal.

13. The nano-film of claim 10, wherein the substrate to be processed is an aluminum sheet for a heat exchanger fin.

14. The nano-film of claim 10, wherein the volatile catalyst is one selected among DMB (di-methyl butadiene), THF (tetra hydro furan) and Hexane.

15. The nano-film of claim 10, wherein the Ti precursor is titanium tetraisopropoxide [Ti(OC₃H₇)₄].