METHOD FOR ACHIEVING COMPLIANT SUB-RESOLUTION ASSIST FEATURES

• US 20080063948A1
• Filed: 09/12/2006
• Published: 03/13/2008
• Est. Priority Date: 09/12/2006
• Status: Abandoned Application

• Current Assignee: Texas Instruments, Inc.
• Original Assignee: Texas Instruments, Inc.
• Inventors: O'Brien, Sean
• Application Number:
  US11/531,048
• Publication Number:
  US 20080063948A1
• Time in Patent Office: Days
• US Class Current: 430/5
• CPC Class Codes: G03F 1/36 Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes

Abstract

The present application is directed to a process of forming a photomask pattern comprising one or more sub-resolution assist features (SRAF). The process comprises generating a first set of SRAF patterns. Each of the SRAF patterns in the first set having a first assigned mask position. After the first set of SRAF patterns are generated, determining if the SRAF patterns of the first set comply with a preselected set of rules, wherein one or more of the SRAF patterns are found to be illegal because they do not comply with at least one of the preselected rules. One or more of the illegal SRAF patterns are reassigned to second mask positions that are different from the first mask positions, the second mask positions allowing the illegal SRAF patterns to comply with the at least one preselected rule to form corrected SRAF patterns. The present application also discloses systems for generating a sub-resolution assist feature pattern for a photomask, as well as SRAF modules embodied on a computer readable medium comprising instructions operable to carry out the processes of the present application.

Claims

1. A process of forming a photomask pattern comprising one or more sub-resolution assist features (SRAF), the process comprising:

generating a first set of SRAF patterns, each of the SRAF patterns in the first set having a first assigned mask position;

determining if the SRAF patterns of the first set comply with a preselected set of rules, wherein one or more of the SRAF patterns are found to be illegal because they do not comply with at least one of the preselected rules; and

reassigning one or more of the illegal SRAF patterns to second mask positions that are different from the first mask positions, the second mask positions allowing the illegal SRAF patterns to comply with the at least one preselected rule to form corrected SRAF patterns.

2. The process of claim 1, further comprising correcting at least one of the illegal SRAF patterns by reshaping and/or resizing the SRAF patterns so that they comply with the preselected rules.

3. The process of claim 1, wherein the first set of SRAF patterns comprise a first SRAF pattern spaced a distance x from a second SRAF pattern, wherein x is smaller than a minimum distance required by the at least one preselected rule.

4. The process of claim 3, wherein during the reassigning process, the first SRAF pattern and the second SRAF patterns are both assigned second mask positions that increase x, thereby complying with the desired minimum distance.

5. The process of claim 1, further comprising a process of determining if the reassigned SRAF patterns in the second mask positions comply with the preselected set of rules.

6. The process of claim 5, further comprising deleting any SRAF patterns in the second mask positions that do not comply with the preselected set of rules.

7. The process of claim 5, wherein if any of the reassigned SRAF patterns do not comply, further comprising assigning one or more reassigned SRAF patterns that do not comply with the preselected set of rules to third mask positions that are different from the second mask positions.

8. The process of claim 7, further comprising repeating the process of reassigning SRAF patterns that do not comply with the preselected set of rules to different mask positions until it is either determined that all the SRAF patterns comply with the preselected set of rules, or it is determined that the non-compliant SRAF patterns should be deleted.

9. The process of claim 1, wherein if any of the reassigned SRAF patterns do not comply, further comprising correcting one or more of the reassigned SRAF patterns in the second mask positions that do not comply with the preselected set of rules by at least one technique chosen from reshaping and resizing the SRAF.

10. The process of claim 1, further comprising carrying out an optical proximity correction process, wherein the reassigning process is carried out prior to the optical proximity correction process.

11. The process of claim 1, further comprising carrying out an optical proximity correction process, wherein the reassigning process is carried out after the optical proximity correction process.

12. A method of forming an integrated circuit device, the method comprising:

applying a photoresist to a wafer;

exposing the photoresist to radiation through a photomask having a photomask pattern prepared by the method of claim 1;

developing the photoresist to form a photoresist pattern on the wafer; and

processing the wafer using the photoresist pattern.

13. An integrated circuit device formed by the process of claim 12.

14. A system for correcting a sub-resolution assist feature (SRAF) pattern for a photomask, the system comprising:

a database operable to store data describing one or more integrated circuit features having target dimensions; and

an SRAF module coupled to the database, wherein the SRAF module is embodied on a computer readable medium and comprises a set of instructions operable to reassign one or more illegal SRAF patterns having first assigned mask positions to second mask positions that are different from the first mask positions.

15. The system of claim 14, wherein the SRAF module further comprises instructions operable to identify the one or more illegal SRAF patterns by determining whether the SRAF patterns comply with a preselected set of rules.

16. The system of claim 15, wherein the SRAF module further comprises instructions operable to correct illegal SRAF patterns by at least one technique chosen from reshaping and resizing the SRAF patterns, so that the illegal SRAF patterns comply with the preselected rules.

17. The system of claim 15, wherein the SRAF module further comprises instructions operable to determine if the reassigned SRAF patterns in the second mask positions comply with the preselected set of rules.

18. The system of claim 17, wherein the SRAF module further comprises instructions operable to delete any SRAF patterns in the second mask positions that do not comply with the preselected set of rules.

19. An SRAF module embodied on a computer readable medium, the SRAF module comprising a set of instructions operable to reassign one or more illegal SRAF patterns having first assigned mask positions to second mask positions that are different from the first mask positions.

20. The system of claim 19, wherein the SRAF module further comprises instructions operable to identify the one or more illegal SRAF patterns by determining whether the SRAF patterns comply with a preselected set of rules.

21. The SRAF module of claim 20, further comprising instructions operable to correct illegal SRAF patterns by at least one technique chosen from reshaping and resizing the SRAF patterns, so that the illegal SRAF patterns comply with the preselected rules.

22. The SRAF module of claim 20, further comprising instructions operable to determine if the reassigned SRAF patterns in the second mask positions comply with the preselected set of rules.

23. The SRAF module of claim 22, further comprising instructions operable to delete any SRAF patterns in the second mask positions that do not comply with the preselected set of rules.