×

SEQUENTIAL CHEMICAL VAPOR DEPOSITION

  • US 20080066680A1
  • Filed: 11/30/2007
  • Published: 03/20/2008
  • Est. Priority Date: 06/21/1996
  • Status: Abandoned Application
First Claim
Patent Images

1. An apparatus for growing a thin film comprising:

  • a reaction chamber configured to contain at least one substrate;

    a first reactant vapor source in selective communication with the reaction chamber;

    a second reactant vapor source in selective communication with the reaction chamber;

    an excess vapor removal system in communication with the reaction chamber;

    a device configured to cause at least a portion of the reactant vapors within the reaction chamber to form vapor fragments selectively in time; and

    a controller configured to introduce vapor reactants from the first reactant vapor source and second reactant vapor source to the reaction chamber in alternate and sequential pulses to deposit a desired film by atomic layer deposition on a substrate when the substrate is present in the reaction chamber.

View all claims
  • 0 Assignments
Timeline View
Assignment View
    ×
    ×