LIGHT EMITTING DEVICE AND MANUFACTURING METHOD THEREOF

• US 20080067497A1
• Filed: 09/17/2007
• Published: 03/20/2008
• Est. Priority Date: 09/18/2006
• Status: Active Grant

• Current Assignee: Suzhou Lekin Semiconductor Company Limited
• Original Assignee: LG Innotek Company Limited (LG Corporation)
• Inventors: KIM, Kyong Jun
• Granted Patent: US 7,989,832 B2
• Time in Patent Office: Days
• US Class Current: 257/13
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/02 characterised by the semiconductor bodies
• CPC Class Codes: H01L 33/22 Roughened surfaces, e.g. at the interface between epitaxial layers
• CPC Class Codes: H01L 33/32 containing nitrogen

Abstract

Disclosed are a light emitting device and a manufacturing method thereof. The light emitting device comprises a first conductive semiconductor layer, an active layer on the first conductive semiconductor, a second conductive semiconductor layer on the active layer, and a dot-shaped roughness layer on the second conductive semiconductor layer.

Claims

12. A light emitting device comprising:

a first conductive semiconductor layer;

an active layer on the first conductive semiconductor;

a second conductive semiconductor layer on the active layer;

a roughness layer comprising indium on the second conductive semiconductor layer; and

a third conductive semiconductor layer on the roughness layer.

1. A light emitting device comprising:

a first conductive semiconductor layer;

an active layer on the first conductive semiconductor;

a second conductive semiconductor layer on the active layer; and

a dot-shaped roughness layer on the second conductive semiconductor layer.

2. The light emitting device as claimed in claim 1, wherein the first conductive semiconductor layer comprises an n-type semiconductor layer and the second conductive semiconductor layer comprises a p-type semiconductor layer.

3. The light emitting device as claimed in claim 1, comprising at least one of an undoped semiconductor layer, a buffer layer and a substrate under the first conductive semiconductor layer.

4. The light emitting device as claimed in claim 1, comprising a first electrode layer under the first conductive semiconductor layer, and at least one of a third conductive semiconductor layer, a second electrode layer and a conductive support substrate on the roughness layer.

5. The light emitting device as claimed in claim 1, comprising a third conductive semiconductor layer on the roughness layer.

6. The light emitting device as claimed in claim 5, wherein the third conductive semiconductor layer comprises a plurality of n-type semiconductor layers, and the n-type semiconductor layer comprises an n-type InGaN clad layer on the roughness layer comprising a dot shape, and an n-type Al_x(Ga_1-x)In_1-yN layer on n-type InGaN clad layer, wherein 0≦

x≦

1 and 0≦

y≦

1.

7. The light emitting device as claimed in claim 5, wherein the third conductive semiconductor layer comprises an n-type InGaN clad layer on the dot-shaped roughness layer, and a superlattice layer on the n-type InGaN clad layer, wherein at least one layer or two layers selected from the group consisting of AlInGaN, InGaN, CaN, AlInN and AlN are alternatively in the superlattice layer.

8. The light emitting device as claimed in claim 6, wherein the n-type Al_x(Ga_1-x)In_1-yN layer of the third conductive semiconductor layer is doped with n-type dopant with an density of 1×

10¹⁸/cm³ or more.

9. The light emitting device as claimed in claim 1, wherein the dot-shaped roughness layer comprises indium and comprises a thickness of 1000 Å

to 1900 Å

.

10. The light emitting device as claimed in claim 5, wherein the third conductive semiconductor layer comprises a roughness surface on a dot-shaped surface of the roughness layer.

11. The light emitting device as claimed in claim 1, comprising at least one of a transparent electrode layer and a p-type electrode layer on the roughness layer.

13. The light emitting device as claimed in claim 12, wherein the roughness layer comprises a dot-shaped layer.

16. The light emitting device as claimed in claim 12, comprising a first electrode layer under the first conductive semiconductor layer, and a second electrode layer and a conductive support substrate on the third conductive semiconductor layer.

13-1. The light emitting device as claimed in claim 12, wherein the third conductive semiconductor layer comprises a first cap layer on the roughness layer, and a second cap layer comprising a superlattice layer on the first cap layer, wherein at least one layer or two layers selected from the group consisting of AlInGaN, InGaN, GaN, AlInN and AlN are alternatively in the superlattice layer.

15. The light emitting device as claimed in claim 14, wherein the first cap layer comprises a thickness of 1 nm to 10 nm and the second cap layer comprises a thickness of 1 nm to 100 nm.

17. A method for manufacturing a light emitting device, the method comprising the steps of:

forming a first conductive semiconductor layer;

forming an active layer on the first conductive semiconductor;

forming a second conductive semiconductor layer on the active layer;

forming a roughness layer using indium on the second conductive semiconductor layer; and

forming a third conductive semiconductor layer on the roughness layer.

18. The method as claimed in claim 17, wherein the roughness layer is formed by depositing the indium at a temperature of 500°

C. to 800°

C. for 1 second to 100 seconds.

19. The method as claimed in claim 17, wherein the step of forming the third conductive semiconductor layer comprises the steps of:

forming an n-type InGaN clad layer on the roughness layer; and

forming at least one n-type Al_x(Ga1-x)In_1-yN layer on the n-type InGaN clad layer, wherein (0≦

x≦

1, 0≦

y≦

1).

20. The method as claimed in claim 19, wherein the n-type Al_x(Ga1-x)In_1-yN layer is doped with n-type dopant with an density of 1×

10¹⁸/cm³ or more.