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FLAT PANEL DISPLAY DEVICE WITH POLYCRYSTALLINE SILICON THIN FILM TRANSISTOR

  • US 20080067514A1
  • Filed: 11/19/2007
  • Published: 03/20/2008
  • Est. Priority Date: 06/05/2003
  • Status: Active Grant
First Claim
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1. A flat panel display device with polycrystalline silicon thin film transistor comprising:

  • a pixel portion divided into gate lines and data lines and equipped with a thin film transistor driven by signals applied by the gate lines and data lines; and

    a driving circuit portion comprising one or more thin film transistors connected to the gate lines and data lines respectively to apply signals to the pixel portion, wherein the average number of grain boundaries of polycrystalline silicon which are formed in active channel regions of the one or more thin film transistors installed at the driving circuit portion and meet a current direction line is at least one or more less than the average number of grain boundaries of polycrystalline silicon which are formed in active channel regions of the thin film transistor installed at the pixel portion and meet a current direction line for a unit area of active channels. wherein;

    the polycrystalline silicon grain boundaries formed in active channel regions of the one or more thin film transistors installed at the driving circuit portion are arranged in such a way that the polycrystalline silicon grain boundaries are inclined to the current direction line at an angle of 45 to 135°

    ; and

    the polycrystalline silicon grain boundaries formed in active channel regions of the thin film transistor installed at the pixel portion are arranged in such a way that the polycrystalline silicon grain boundaries are inclined to the current direction line at an angle of −

    45 to 45°

    .

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