FLAT PANEL DISPLAY DEVICE WITH POLYCRYSTALLINE SILICON THIN FILM TRANSISTOR
First Claim
1. A flat panel display device with polycrystalline silicon thin film transistor comprising:
- a pixel portion divided into gate lines and data lines and equipped with a thin film transistor driven by signals applied by the gate lines and data lines; and
a driving circuit portion comprising one or more thin film transistors connected to the gate lines and data lines respectively to apply signals to the pixel portion, wherein the average number of grain boundaries of polycrystalline silicon which are formed in active channel regions of the one or more thin film transistors installed at the driving circuit portion and meet a current direction line is at least one or more less than the average number of grain boundaries of polycrystalline silicon which are formed in active channel regions of the thin film transistor installed at the pixel portion and meet a current direction line for a unit area of active channels. wherein;
the polycrystalline silicon grain boundaries formed in active channel regions of the one or more thin film transistors installed at the driving circuit portion are arranged in such a way that the polycrystalline silicon grain boundaries are inclined to the current direction line at an angle of 45 to 135°
; and
the polycrystalline silicon grain boundaries formed in active channel regions of the thin film transistor installed at the pixel portion are arranged in such a way that the polycrystalline silicon grain boundaries are inclined to the current direction line at an angle of −
45 to 45°
.
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Accused Products
Abstract
The present invention relates to a flat panel display device comprising a polycrystalline silicon thin film transistor and provides a flat panel display device having improved characteristics by having a different number of grain boundaries included in polycrystalline silicon thin film formed in active channel regions of a driving circuit portion and active channel regions of pixel portion. This may be achieved by having a different number of grain boundaries included in the polycrystalline silicon thin film formed in active channel regions of a switching thin film transistor and a driving thin film transistor formed in the pixel portion, and by having a different number of grain boundaries included in polycrystalline silicon thin film formed in active channel regions of a thin film transistor for driving the pixel portion for each red, green and blue of the pixel portion. Further, this may be achieved by having a different number of grain boundaries included in polycrystalline silicon formed in active channel regions of an NMOS thin film transistor and a PMOS thin film transistor for forming CMOS transistor used in flat panel display device, thereby constructing a thin film transistor to obtain the improved characteristics for each transistor.
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Citations
40 Claims
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1. A flat panel display device with polycrystalline silicon thin film transistor comprising:
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a pixel portion divided into gate lines and data lines and equipped with a thin film transistor driven by signals applied by the gate lines and data lines; and
a driving circuit portion comprising one or more thin film transistors connected to the gate lines and data lines respectively to apply signals to the pixel portion, wherein the average number of grain boundaries of polycrystalline silicon which are formed in active channel regions of the one or more thin film transistors installed at the driving circuit portion and meet a current direction line is at least one or more less than the average number of grain boundaries of polycrystalline silicon which are formed in active channel regions of the thin film transistor installed at the pixel portion and meet a current direction line for a unit area of active channels. wherein;
the polycrystalline silicon grain boundaries formed in active channel regions of the one or more thin film transistors installed at the driving circuit portion are arranged in such a way that the polycrystalline silicon grain boundaries are inclined to the current direction line at an angle of 45 to 135°
; and
the polycrystalline silicon grain boundaries formed in active channel regions of the thin film transistor installed at the pixel portion are arranged in such a way that the polycrystalline silicon grain boundaries are inclined to the current direction line at an angle of −
45 to 45°
.
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2. A flat panel display device with polycrystalline silicon thin film transistor comprising:
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a pixel portion divided into gate lines and data lines and equipped with a thin film transistor driven by signals applied by the gate lines and data lines; and
a driving circuit portion comprising one or more thin film transistors connected to the gate lines and data lines respectively to apply signals to the pixel portion, wherein the average number of grain boundaries of polycrystalline silicon which are formed in active channel regions of the one or more thin film transistors installed at the driving circuit portion and meet a current direction line is at least one or more less than the average number of grain boundaries of polycrystalline silicon which are formed in active channel regions of the thin film transistor installed at the pixel portion and meet a current direction line for a unit area of active channels. wherein;
the polycrystalline silicon grain boundaries formed in active channel regions of the one or more thin film transistors installed at the driving circuit portion are arranged in such a way that the polycrystalline silicon grain boundaries are inclined to the current direction line at an angle of −
45 to 45°
;
the polycrystalline silicon grain boundaries formed in active channel regions of the thin film transistor installed at the pixel portion are arranged in such a way that the polycrystalline silicon grain boundaries are inclined to the current direction line at an angle of −
45 to 45°
; and
the length of the active channels of the thin film transistor installed at the pixel portion is the same as length of the active channels of the thin film transistor installed at the driving circuit portion.
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3. A flat panel display device with polycrystalline silicon thin film transistor comprising:
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a pixel portion divided into gate lines and data lines and equipped with a thin film transistor driven by signals applied by the gate lines and data lines; and
a driving circuit portion comprising one or more thin film transistors connected to the gate lines and data lines respectively to apply signals to the pixel portion, wherein the average number of grain boundaries of polycrystalline silicon which are formed in active channel regions of the one or more thin film transistors installed at the driving circuit portion and meet a current direction line is at least one or more less than the average number of grain boundaries of polycrystalline silicon which are formed in active channel regions of the thin film transistor installed at the pixel portion and meet a current direction line for a unit area of active channels. wherein shape of the grains of polycrystalline silicon is isotropic.
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4. A flat panel display device with polycrystalline silicon thin film transistor comprising:
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a pixel portion divided into gate lines and data lines and equipped with a thin film transistor driven by signals applied by the gate lines and data lines;
a driving circuit portion comprising one or more thin film transistors connected to the gate lines and data lines respectively to apply signals to the pixel portion, wherein the average number of grain boundaries of polycrystalline silicon which are formed in active channel regions of the one or more thin film transistors installed at the driving circuit portion and meet a current direction line is at least one or more less than the average number of grain boundaries of polycrystalline silicon which are formed in active channel regions of the thin film transistor installed at the pixel portion and meet a current direction line for a unit area of active channels;
wherein a shape of the grains of polycrystalline silicon is anisotropic, and the grain boundaries are primary grain boundaries;
wherein the polycrystalline silicon is fabricated by a sequential lateral solidification method;
wherein a length of the active channels of the thin film transistor installed at the pixel portion is the same as length of the active channels of the one or more thin film transistors installed at the driving circuit portion.
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5. A flat panel display device with polycrystalline silicon thin film transistor comprising:
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a pixel portion divided into gate lines and data lines and equipped with a thin film transistor driven by signals applied by the gate lines and data lines; and
a driving circuit portion comprising one or more thin film transistors connected to the gate lines and data lines respectively to apply signals to the pixel portion, wherein the average number of grain boundaries of polycrystalline silicon which are formed in active channel regions of the one or more thin film transistors installed at the driving circuit portion and meet a current direction line is at least one or more less than the average number of grain boundaries of polycrystalline silicon which are formed in active channel regions of the thin film transistor installed at the pixel portion and meet a current direction line for a unit area of active channels;
wherein a shape of the grains of polycrystalline silicon is anisotropic, and the grain boundaries are primary grain boundaries;
wherein the polycrystalline silicon is fabricated by a sequential lateral solidification method;
wherein the polycrystalline silicon is formed by excimer laser annealing.
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6. A flat panel display device with polycrystalline silicon thin film transistor comprising:
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a pixel portion divided into gate lines and data lines and equipped with a thin film transistor driven by signals applied by the gate lines and data lines; and
a driving circuit portion comprising one or more thin film transistors connected to the gate lines and data lines respectively to apply signals to the pixel portion, wherein the average number of grain boundaries of polycrystalline silicon which are formed in active channel regions of the one or more thin film transistors installed at the driving circuit portion and meet a current direction line is at least one or more less than the average number of grain boundaries of polycrystalline silicon which are formed in active channel regions of the thin film transistor installed at the pixel portion and meet a current direction line for a unit area of active channels;
wherein the average grain size of polycrystalline silicon grains included in active channel region of a gate in the driving circuit portion is larger than that of polycrystalline silicon grains included in active channel region of a gate in the pixel portion.
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7. A flat panel display device with polycrystalline silicon thin film transistor comprising:
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a switching thin film transistor for transmitting data signals; and
a driving thin film transistor for driving the organic electroluminescent device so that a certain amount of current flows through organic electroluminescent device according to the data signals, wherein the average number of grain boundaries of polycrystalline silicon which are formed in active channel regions of the driving thin film transistor and meet a current direction line is at least one or more greater than the average number of grain boundaries of polycrystalline silicon which are formed in active channel regions of the switching thin film transistor and meet a current direction line for a unit area of active channels. - View Dependent Claims (8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19)
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- 20. A CMOS thin film transistor characterized in that a P type thin film transistor and an N type thin film transistor have a different number of primary grain boundaries of polycrystalline silicon included in active channel regions, and the number of grain boundaries included in the P type thin film transistor is at least one or more less than the number of grain boundaries included in the N type thin film transistor.
- 30. A flat panel display device comprising green, red and blue pixel regions, and driving thin film transistor for driving each of the pixels having the same length and width of active channels, wherein the number of grain boundaries of polycrystalline silicon included in active channel regions of the driving thin film transistor is different from each other for each pixel.
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40. A flat panel display device with polycrystalline silicon thin film transistors comprising:
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switching thin film transistor for transmitting data signals; and
driving thin film transistor for driving an organic electroluminescent device so that a certain amount of current flows through the organic electroluminescent device according to the data signals, wherein an average number of grain boundaries of polycrystalline silicon which are formed in an active channel regions of each driving thin film transistor and meet a current direction line is more than zero and at least one or more less than an average number of grain boundaries of polycrystalline silicon which are formed in an active channel region of each switching thin film transistor and meet a current direction line for a unit area of an active channels.
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Specification