Insulated-gate field-effect thin film transistors
First Claim
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1. A semiconductor thin film Gated-FET device, comprising:
- a semiconductor thin film channel region positioned between source and drain regions, the channel region comprised of source and drain region majority carrier type; and
a gate region positioned adjacent to the thin film channel region, the gate region coupled to the channel region by a dielectric region, the gate region comprised of;
a first gate voltage to fully deplete majority carriers in the channel region to decouple source and drain regions; and
a second gate voltage to allow adequate majority carriers in the channel region to couple source and drain regions.
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Abstract
A semiconductor thin film Gated-FET device, comprising: a resistive thin film channel region positioned between a source and a drain region, said channel region comprising a lower level of said source and drain majority carrier type; and a gate region coupled to the channel region by a dielectric region, wherein a first gate voltage modulates the channel resistance to a substantially non-conductive state by fully depleting majority carriers from the thin film channel region. Said device, wherein a second gate voltage modulates the channel resistance to a substantially conductive state by leaving adequate majority carriers in the thin film layer channel region.
102 Citations
20 Claims
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1. A semiconductor thin film Gated-FET device, comprising:
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a semiconductor thin film channel region positioned between source and drain regions, the channel region comprised of source and drain region majority carrier type; and
a gate region positioned adjacent to the thin film channel region, the gate region coupled to the channel region by a dielectric region, the gate region comprised of;
a first gate voltage to fully deplete majority carriers in the channel region to decouple source and drain regions; and
a second gate voltage to allow adequate majority carriers in the channel region to couple source and drain regions. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. A three terminal semiconductor thin film Gated-FET device, comprising:
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a source region, a drain region and a gate region, each said region coupled to a terminal; and
a semiconductor thin film channel coupling the source to the drain, said channel having a lower level of said source and drain doping type; and
a dielectric layer coupling the gate to the channel, wherein;
a first voltage at the gate terminal fully depletes majority carriers in said thin film channel to decouple said source and drain regions; and
a second voltage at the gate terminal maintains adequate majority carriers in said thin film channel to couple said source and drain regions. - View Dependent Claims (13, 14, 15, 16)
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17. A semiconductor thin film Gated-FET device, comprising:
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a resistive thin film channel region positioned between a source and a drain region, said channel region comprising a lower level of said source and drain majority carrier type; and
a gate region coupled to the channel region by a dielectric region, wherein a first gate voltage modulates the channel resistance to a substantially non-conductive state by fully depleting majority carriers from the thin film channel region. - View Dependent Claims (18, 19, 20)
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Specification