ATOMIC LAYER DEPOSITION APPARATUS

• US 20080069955A1
• Filed: 09/18/2007
• Published: 03/20/2008
• Est. Priority Date: 09/20/2006
• Status: Active Grant

• Current Assignee: ASM Korea Ltd. (ASM International NV)
• Original Assignee: Asm Genitech Korea Ltd. (ASM International NV)
• Inventors: Terhorst, Herbert, Jeong, Sang Jin, Park, Hyung-Sang, Kim, Dae Youn, Koh, Wonyong, Hong, Kyung Il
• Granted Patent: US 7,976,898 B2
• Time in Patent Office: Days
• US Class Current: 427/255.28
• CPC Class Codes: C23C 16/045 Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
• CPC Class Codes: C23C 16/45508 Radial flow
• CPC Class Codes: C23C 16/45544 characterized by the apparatus

Abstract

The present invention relates to an ALD apparatus, and particularly relates to an ALD apparatus that is suitable for rapidly depositing a thin film on a substrate having an actual area that is larger than a planar substrate. In the reaction chamber of the ALD apparatus according to an exemplary embodiment of the present invention, more gas is supplied to a portion where more gas is required by having differences in the space for gas to flow rather than supplying the gas in a constant flux and a constant flow velocity such that the time required for supplying reactant gases and waste of reactant gases may be minimized to increase productivity of the ALD apparatus. The ceiling of the reaction space is shaped to provide a nonuniform gap over the substrate.

Claims

1. A lateral flow atomic layer deposition (ALD) apparatus in which reactant gas flows in a gas flow direction substantially parallel to the surface of a circular substrate between the surface of the substrate and a side facing the substrate, comprising:

a reaction chamber;

a substrate support configured to support the circular substrate within the reaction chamber; and

a part of the reaction chamber facing the substrate support, the reaction chamber part including a portion depressed away from the substrate support, wherein the reaction chamber part and the substrate support define a gas flow space above the substrate that is not uniform in height across the substrate in a direction perpendicular to the gas flow direction.

2. The ALD apparatus of claim 1, wherein the depressed portion of the reaction chamber part corresponds to a middle portion of the substrate support.

3. The ALD apparatus of claim 1, wherein a maximum height of the gas flow space over the substrate is at least one and half times higher than a minimum height thereof.

4. The atomic layer reaction apparatus of claim 3, wherein the maximum height of the gas flow space over the substrate is at least two times higher than the minimum height thereof.

5. The ALD apparatus of claim 1, wherein a minimum height of the gas flow space over the substrate flow is within about 0.5 mm to about 5 mm.

6. The ALD apparatus of claim 5, wherein the minimum height of the gas flow space over the substrate is within about 1 mm to about 3 mm.

7. The ALD apparatus of claim 1, wherein a maximum height of the gas flow over the substrate is within about 2 mm to about 15 mm.

8. The ALD apparatus of claim 7, wherein the maximum height of the gas flow space over the substrate is within about 3 mm to about 6 mm.

9. The ALD apparatus of claim 1, wherein the reaction chamber part is a gas flow control plate at least partially defining a gas inlet for the reaction chamber.

10. The ALD apparatus of claim 1, comprising at least two separate gas inlets to the reaction chamber.

11. The ALD apparatus of claim 1, wherein the reaction chamber part comprises an RF electrode for generating plasma within the reaction space.

12. A method of conducting atomic lay deposition (ALD), comprising:

providing a substrate in a reaction chamber; and

alternately and sequentially supplying at least two ALD reactants into the reaction chamber space over the substrate in a gas flow direction parallel to the substrate, wherein the reaction space has a height over a center of the substrate greater than a height over edges of the substrate in a cross-sectional view perpendicular to the gas flow direction.

13. The method of claim 12, wherein providing the substrate comprises providing a partially fabricated substrate with a surface area at least 10 times a surface of a similarly sized planar substrate.

14. The method of claim 12, wherein providing the substrate comprises providing a partially fabricated substrate with a surface area at least 50 times a surface of a similarly sized planar substrate.

15. The method of claim 12, wherein the reaction space has a maximum height over the substrate and a minimum height above the substrate, wherein the maximum height is at least 1.5 times the minimum height.

16. The method of claim 12, wherein the reaction space has a maximum height over the substrate and a minimum height above the substrate, wherein the maximum height is at least 2 times the minimum height.