Rectifying Contact to an N-Type Oxide Material or a Substantially Insulating Oxide Material
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Abstract
A rectifying contact to an n-type oxide material and/or a substantially insulating oxide material includes a p-type oxide material. The p-type oxide material includes a copper species and a metal species, each of which are present in an amount ranging from about 10 atomic % to about 90 atomic % of total metal in the p-type oxide material. The metal species is selected from tin, zinc, and combinations thereof.
20 Citations
41 Claims
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1-35. -35. (canceled)
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36. A method of making a diode, comprising:
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providing a rectifying contact having a p-type oxide material, including;
a copper species present in an amount ranging from about 10 atomic % to about 90 atomic % of total metal in the p-type oxide material; and
a metal species present in an amount ranging from about 10 atomic % to about 90 atomic % of total metal in the p-type oxide material, the metal species selected from tin, zinc, and combinations thereof; and
establishing the p-type oxide material in electrical contact with an n-type oxide material, thereby forming a p-n junction. - View Dependent Claims (37, 38, 39)
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40. A method of using a p-type oxide material, the method comprising:
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establishing the p-type oxide material in electrical contact with an n-type oxide material, the p-type oxide material including;
a copper species present in an amount ranging from about 10 atomic % to about 90 atomic % of total metal in the p-type oxide material; and
a metal species selected from zinc, tin, and combinations thereof, the metal species present in an amount ranging from about 10 atomic % to about 90 atomic % of total metal in the p-type oxide material;
wherein the p-type oxide material is adapted to provide a rectifying contact to an
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41. (canceled)
Specification