SEMICONDUCTOR DEVICES AND METHODS WITH BILAYER DIELECTRICS
First Claim
1. A method of forming a semiconductor device, comprising:
- providing a substrate;
forming a first dielectric layer of a first high-k material above the substrate, the first high-k material selected from the group consisting of HfO2, HfSiON, HfTaO, HfTiO, HfTiTaO, HfAlON, and HfZrO;
forming a second dielectric layer of a second high-k material above the first dielectric layer, the second material being different than the first material and selected from the group consisting of HfSiO, HfSiON, HfTaO, HfTiO, HfTiTaO, HfAlON, and HfZrO; and
forming a gate structure above the second dielectric layer.
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Abstract
A semiconductor device is disclosed that includes: a substrate; a first high-k dielectric layer; a second high-k dielectric layer formed of a different high-k material; and a metal gate. In another form, a method of forming a semiconductor device is disclosed that includes: providing a substrate; forming a first high-k dielectric layer above the substrate; forming a second dielectric layer of a different high-k material above the first dielectric layer; and forming a gate structure above the second dielectric layer. In yet another form, a method of forming a semiconductor device is disclosed that includes: providing a substrate; forming an interfacial layer above the substrate; forming a first high-k dielectric layer above the interfacial layer; performing a nitridation technique; performing an anneal; forming a second high-k dielectric layer of a different high-k material above the first dielectric layer; and forming a metal gate structure above the second dielectric layer.
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Citations
30 Claims
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1. A method of forming a semiconductor device, comprising:
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providing a substrate; forming a first dielectric layer of a first high-k material above the substrate, the first high-k material selected from the group consisting of HfO2, HfSiON, HfTaO, HfTiO, HfTiTaO, HfAlON, and HfZrO; forming a second dielectric layer of a second high-k material above the first dielectric layer, the second material being different than the first material and selected from the group consisting of HfSiO, HfSiON, HfTaO, HfTiO, HfTiTaO, HfAlON, and HfZrO; and forming a gate structure above the second dielectric layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18)
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19. A method of forming a semiconductor device, comprising:
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providing a substrate; forming an interfacial layer above the substrate; forming a first dielectric layer of a first high-k material above the interfacial layer; performing a nitridation technique; performing an anneal; forming a second dielectric layer of a second high-k material above the first dielectric layer after performing the nitridation technique and after performing the anneal; and forming a metal gate structure above the second dielectric layer. - View Dependent Claims (20)
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21. A semiconductor device comprising:
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a substrate; a first dielectric layer formed over the substrate and formed of a first high-k material, the first high-k material selected from the group consisting of HfO2, HfSiON, HfTaO, HfTiO, HfTiTaO, HfAlON, and HfZrO; a second dielectric layer formed over the first dielectric layer and formed of a second high-k material, the second material being different than the first material and selected from the group consisting of HfSiO, HfSiON, HfTaO, HfTiO, HfTiTaO, HfAlON, and HfZrO; and a metal gate formed over the second dielectric layer. - View Dependent Claims (22, 23, 24, 25, 26, 27, 28, 29, 30)
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Specification