CRYSTALLINE STRUCTURE AND METHOD OF FABRICATION THEREOF

• US 20080072816A1
• Filed: 09/26/2006
• Published: 03/27/2008
• Est. Priority Date: 09/26/2006
• Status: Active Grant

• Current Assignee: International Business Machines Corporation
• Original Assignee: International Business Machines Corporation
• Inventors: Riel, Heike E., Riess, Walter H., Schmid, Heinz, Karg, Siegfried F.
• Granted Patent: US 7,686,886 B2
• Time in Patent Office: Days
• US Class Current: 117/9
• CPC Class Codes: C30B 29/60 characterised by shape
• CPC Class Codes: Y10S 117/902 Specified orientation, shape, crystallography, or size of seed or substrate

Abstract

A method for forming a structure of a desired cross-section on a substrate is provided. The method provides a seed structure comprising at least one support layer on the substrate. The support layer has a geometric shape related to the desired cross-section of the structure and is diffusive to a precursor constituent. The method further includes growing the structure by supplying at least one precursor constituent on the substrate. The desired cross-section of the structure is defined by the geometric shape of at least one support layer.

Claims

1. A method for forming a structure of a desired cross-section on a substrate, the method comprising:

providing a seed structure on the substrate, wherein the seed structure comprises at least one support layer having a geometric shape related to the desired cross-section of the structure; and

growing the structure by supplying at least one precursor constituent to the seed structure, wherein the desired cross-section of the structure is defined by the geometric shape of the at least one support layer.

2. The method of claim 1, wherein the seed structure further comprises at least one covering layer adsorbing the at least one precursor constituent.

3. The method of claim 2, further comprising depositing the adsorbed at least one precursor constituent on the substrate.

4. The method of claim 1, wherein growing comprises heating the seed structure in the presence of the precursor constituent.

5. The method of claim 1, wherein the support layer is diffusive to the precursor constituent.

6. The method of claim 1, wherein the structure comprises a crystalline structure.

7. The method of claim 1, wherein the structure is epitaxial to at least one of the substrate and the seed structure.

8. The method of claim 1, wherein the structure comprises a crystalline hetero-structure.

9. The method of claim 1, wherein the structure comprises a core-shell structure.

10. The method of claim 1, wherein the structure comprises a doping profile.

11. The method of claim 1, wherein the geometric shape of the at least one support layer and the at least one covering layer is defined by lithography.

12. The method of claim 1, wherein the at least one support layer and the at least one covering layer comprises a material selected from a group comprising metals, metal alloys, semiconductors and insulators.

13. The method of claim 12, wherein the metals comprise one of gold, gallium, nickel, lead, iron, copper, and aluminum or any combination thereof.

14. The method of claim 1, wherein the precursor constituent is selected from a group comprising halides, halogens, silanes, germanes, metallo-organic compounds, molecules containing semiconductor constituents, and compositions of molecules containing boron, antimony, carbon, arsene, phosphorous, and sulphur.

15. A method for forming a structure of a desired cross-section on a substrate wherein, the substrate is surrounded by at least one precursor constituent, the method comprising:

providing a seed structure on the substrate, the seed structure comprising;

at least one covering layer adsorbing the precursor constituent; and

at least one support layer having a geometric shape related to the desired cross-section of the structure; and

forming the structure by supplying at least one of the precursor constituent and the adsorbed precursor constituent to the seed structure, wherein the desired cross-section of the structure is defined by the geometric shape of the at least one support layer.

16. The method of claim 15, wherein the at least one covering layer and the at least one support layer is lithographically provided on the substrate.

17. The method of claim 15, wherein the at least one support layer is diffusive to at least one of the precursor constituent and the adsorbed precursor constituent.

18. The method of claim 15, wherein forming comprises heating the seed structure in the presence of the precursor constituent.

19. A structure of a desired cross-section on a substrate prepared by a process comprising:

providing a seed structure on the substrate, wherein the seed structure comprises at least one support layer having a geometric shape related to the desired cross-section of the structure; and

growing the structure by supplying at least one precursor constituent to the seed structure, wherein the desired cross-section of the structure is defined by the geometric shape of the at least one support layer.

20. The process of claim 19, wherein the seed structure further comprises at least one covering layer adsorbing the precursor constituent.

21. The process of claim 19, wherein the precursor constituent is selected from a group comprising halides, halogens, silanes, germanes, metallo-organic compounds, molecules containing semiconductor constituents, and compositions of molecules containing boron, antimony, carbon, arsene, phosphorous, and sulphur.

22. The process of claim 19, wherein the at least one support layer and the at least one covering layer comprises a material selected from a group comprising metals, metal alloys, semiconductors and insulators.