SEMICONDUCTOR APPARATUS AND METHOD OF MANUFACTURING THE SAME

• US 20080073653A1
• Filed: 09/21/2007
• Published: 03/27/2008
• Est. Priority Date: 09/27/2006
• Status: Active Grant

• Current Assignee: Canon Kabushiki Kaisha (Canon Inc.)
• Original Assignee: Canon Kabushiki Kaisha (Canon Inc.)
• Inventors: Iwasaki, Tatsuya
• Granted Patent: US 7,791,082 B2
• Time in Patent Office: Days
• US Class Current: 257/79
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
• CPC Class Codes: H10K 59/12 Active-matrix OLED [AMOLED] displays
• CPC Class Codes: H10K 59/35 comprising red-green-blue [RGB] subpixels

Abstract

It is an object of the present invention to provide a technology of controlling a threshold voltage of a thin film transistor in which an amorphous oxide film is applied to a channel layer. There is provided a semiconductor apparatus including a plurality of kinds of transistors, each of the plurality of kinds of transistors including a channel layer made of an amorphous oxide containing a plurality of kinds of metal elements; and threshold voltages of the plurality of kinds of transistors are different from one another by changing an element ratio of the amorphous oxide.

Claims

1. A semiconductor apparatus, comprising a plurality of kinds of semiconductor devices, wherein:

the plurality of kinds of semiconductor devices each include a semiconductor of an amorphous oxide containing a plurality of kinds of metal elements; and

an element ratio of the amorphous oxide is changed so that respective electrical characteristics of the plurality of kinds of semiconductor devices are different from one another.

2. A semiconductor apparatus, comprising a plurality of kinds of transistors, wherein:

the plurality of kinds of transistors each include a channel layer made of an amorphous oxide containing a plurality of kinds of metal elements; and

an element ratio of the amorphous oxide is changed so that respective threshold voltages of the plurality of kinds of transistors are different from one another.

3. A semiconductor apparatus according to claim 2, wherein:

the amorphous oxide contains In; and

the threshold voltage of each of the plurality of kinds of transistors is decreased by increasing an element ratio of the In.

4. A semiconductor apparatus according to claim 2, wherein:

the amorphous oxide contains Ga, In, and Zn; and

the threshold voltage of each of the plurality of kinds of transistors is increased by increasing an element ratio of the Ga.

5. A semiconductor apparatus according to claim 2, wherein:

the plurality of kinds of transistors is disposed in rows on a substrate;

the plurality of kinds of transistors each include a gate electrode, gate electrodes of the transistors being connected to one another via a common wiring; and

the element ratio of the amorphous oxide is monotonically changed in the row.

6. A semiconductor apparatus according to claim 2, wherein:

the plurality of kinds of transistors is disposed in a matrix form on a substrate;

the plurality of kinds of transistors each include a gate electrode, gate electrodes of the transistors disposed in each column being connected to one another via a common wiring; and

the element ratio of the amorphous oxide is monotonically changed in the column.

7. A display device, comprising:

a semiconductor apparatus according to claim 6; and

a display element connected to a field effect transistor of the semiconductor apparatus.

8. A method of manufacturing a semiconductor apparatus comprising a plurality of kinds of oxide semiconductor films on a substrate, wherein in the formation of the oxide semiconductor films, at least two different materials are simultaneously supplied to the substrate from different directions.

9. A method of manufacturing a semiconductor apparatus comprising a plurality of kinds of oxide semiconductor films as channel layers of transistors on a substrate, wherein in the formation of the oxide thin film, at least two different materials are simultaneously supplied to the substrate from different directions.

10. A method of manufacturing a semiconductor apparatus, comprising a plurality of kinds of oxide semiconductor films as channel layers of transistors on a substrate, wherein material sources for depositing the oxide semiconductor films are disposed in rows, and in the formation of the oxide semiconductor films, the substrate is moved in a direction different from a direction in which the material sources are disposed.