System for manufacturing microelectronic, microoptoelectronic or micromechanical devices

• US 20080073766A1
• Filed: 10/31/2007
• Published: 03/27/2008
• Est. Priority Date: 07/20/2001
• Status: Active Grant

• Current Assignee: SAES Getters SpA (SAES Getters S)
• Original Assignee: SAES Getters SpA (SAES Getters S)
• Inventors: Amiotti, Marco
• Granted Patent: US 7,566,957 B2
• Time in Patent Office: Days
• US Class Current: 257/682
• CPC Class Codes: B81C 1/00285 using materials for controlling the level of pressure, contaminants or moisture inside of the package, e.g. getters
• CPC Class Codes: C23C 14/04 Coating on selected surface areas, e.g. using masks
• CPC Class Codes: C23C 16/04 Coating on selected surface areas, e.g. using masks
• CPC Class Codes: G01J 5/045 Sealings; Vacuum enclosures; Encapsulated packages; Wafer bonding structures; Getter arrangements getter arrangements per se H01L23/26 and H01L21/3221
• CPC Class Codes: H01L 21/6835 using temporarily an auxiliary support
• CPC Class Codes: H01L 23/26 including materials for absorbing or reacting with moisture or other undesired substances , e.g. getters
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 2924/09701 Low temperature co-fired ceramic [LTCC]

Abstract

The specification teaches a system for manufacturing microelectronic, microoptoelectronic or micromechanical devices (microdevices) in which a contaminant absorption layer improves the life and operation of the microdevice. In an embodiment, a system for manufacturing the devices includes efficiently integrating a getter material in multiple microdevices.

Claims

1. A system comprising:

a support device including discrete deposits of contaminant removing material on a base layer of a material selected from the group consisting essentially of glasses, ceramics, semiconductors and metals, wherein said contaminant removing material is selected from among the group of materials consisting essentially of getter materials and drier materials; and

a manufacturing layer covering said contaminant removing material, wherein said manufacturing layer includes a substrate layer which may be used in the manufacture of a microdevice; and

passages formed in said manufacturing layer by removing selected portions of said manufacturing layer, such that said contaminant removing material is exposed to atmosphere, wherein said passages create cavities.

2. The system of claim 1 further comprising operational parts formed in one or more of the cavities by removing selected portions of said manufacturing layer, wherein, when operationally configured, the support device covers said operational parts.

3. The system of claim 1 further comprising a storage container including an inert atmosphere, wherein said covered support device is stored in the inert atmosphere of the storage container prior to use.

4. The system of claim 1, wherein the contaminant removing material is formed to a thickness of between about 0.1 to 5 μ

m.

5. The system of claim 1, wherein the manufacturing layer is formed to a thickness of between about 1 to 20 μ

m.

21. The system of claim 1, wherein the base layer further includes at least one hollow formed therein, wherein the contaminant removal material is located in the at least one hollow.

22. The system of claim 1, wherein the manufacturing layer further includes at least one hollow formed therein, wherein a microdevice may be formed in the at least one hollow.

23. The apparatus of claim 1, wherein the manufacturing layer is covered by a covering layer, the covering layer separating the atmosphere of the apparatus from an external atmosphere.

24. The system of claim 23, wherein the atmosphere of the apparatus is an evacuated atmosphere.

25. The system of claim 23, wherein the atmosphere of the apparatus is an inert atmosphere.

26. The system of claim 1, wherein the base layer is divided into discrete base structures, and wherein each base structure includes a manufacturing layer and a discrete deposit of contaminant removing material.

6-20. -20. (canceled)

27. An apparatus, comprising:

a support device including discrete deposits of contaminant removing material in a base layer of a material selected from the group consisting essentially of glasses, ceramics, semiconductors and metals, wherein said contaminant removing material is selected from among the group of materials consisting essentially of getter materials and drier materials, the contaminant removing material deposited in hollows of the base layer; and

a manufacturing layer covering said contaminant removing material, wherein said manufacturing layer includes a substrate layer which may be used in the manufacture of a microdevice; and

passages formed in said manufacturing layer by removing selected portions of said manufacturing layer, such that said contaminant removing material is exposed to atmosphere, wherein said passages create cavities.

28. The apparatus of claim 27, wherein the manufacturing layer is covered by a covering layer, the covering layer separating the atmosphere of the apparatus from an external atmosphere.

29. The apparatus of claim 28, wherein the atmosphere of the apparatus is an evacuated atmosphere.

30. The apparatus of claim 28, wherein the atmosphere of the apparatus is an inert atmosphere.

31. The apparatus of claim 27, wherein the base layer is divided into discrete base structures, and wherein each base structure includes a manufacturing layer and a discrete deposit of contaminant removing material.

32. The apparatus of claim 27 further comprising operational parts formed in one or more of the cavities by removing selected portions of said manufacturing layer, wherein, when operationally configured, the support device covers said operational parts.

33. The apparatus of claim 27, wherein the contaminant removing material is formed to a thickness of between about 0.1 to 5 μ

m.

34. The apparatus of claim 27, wherein the manufacturing layer is formed to a thickness of between about 1 to 20 μ

m.

35. An apparatus, comprising:

a support device including discrete deposits of contaminant removing material in a base layer of a material selected from the group consisting essentially of glasses, ceramics, semiconductors and metals, wherein said contaminant removing material is selected from among the group of materials consisting essentially of getter materials and drier materials, the contaminant removing material deposited in hollows of the base layer; and

a manufacturing layer covering said contaminant removing material, wherein said manufacturing layer includes a substrate layer which may be used in the manufacture of a microdevice;

passages formed in said manufacturing layer by removing selected portions of said manufacturing layer, such that said contaminant removing material is exposed to atmosphere, wherein said passages create cavities; and

a covering layer covering the manufacturing layer, the covering layer separating the atmosphere of the apparatus from an external atmosphere.