Architecture for a Memory Device

• US 20080074984A1
• Filed: 09/21/2007
• Published: 03/27/2008
• Est. Priority Date: 09/21/2006
• Status: Abandoned Application

• Current Assignee: Nanochip, Inc.
• Original Assignee: Nanochip, Inc.
• Inventors: Adams, Donald Edward
• Application Number:
  US11/859,667
• Publication Number:
  US 20080074984A1
• Time in Patent Office: Days
• US Class Current: 369/126
• CPC Class Codes: B82Y 10/00 Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
• CPC Class Codes: G11B 9/1436 with provision for moving the heads or record carriers relatively to each other

Abstract

A memory device for a probe storage system comprises a media die including a frame and a media platform movably coupled with the frame, a tip die connected with the frame such that the tip die is generally parallel to the media platform, the tip die including a plurality of tip groups, wherein a tip group includes a number of tips, a set of electrical traces connected between the media platform and the frame, a number of electrical traces of the set of electrical traces corresponding to the number of tips. The set of electrical traces is selectably associable with one of the tip groups so that the tips of the associated tip group are in electrical communication with the media die.

Claims

1. A memory device for a probe storage system comprising:

a media die including a frame and a media platform movably coupled with the frame;

a tip die connected with the frame such that the tip die is generally parallel to the media platform, the tip die including a plurality of tip groups, wherein a tip group includes a number of tips;

a set of electrical traces connected between the media platform and the frame, a number of electrical traces of the set of electrical traces corresponding to the number of tips;

wherein the set of electrical traces is selectably associable with one of the tip groups so that the tips of the associated tip group are in electrical communication with the media die.

2. The memory device of claim 1, wherein:

each tip is connected with the tip die by way of a cantilever; and

the set of electrical traces is selectably associable with the one of the tip groups by urging cantilevers associated with the tip group so that the number of tips of the tip group contacts the media platform.

3. The memory device of claim 2, wherein the cantilevers are urged by electrostatic force.

4. The memory device of claim 1 further comprising:

a permanent magnet connected with the tip die;

two or more wires connected with the media platform to provide a current that interacts with a magnetic field of the permanent magnet;

wherein the media platform is movable relative to the frame by applying a current to the two or more wires.

5. The memory device of claim 1, wherein the tips are movable relative to one another in a plane of the media platform.

6. The memory device of claim 5, further comprising:

a memory device controller; and

a planar offset electrical trace connected between the controller and a cantilever associated with one tip from each of the plurality of tip groups; and

wherein a tip is movable in a plane of the media platform by urging a corresponding cantilever; and

wherein the corresponding cantilever is urged by providing a signal to the planar offset electrical trace.

7. The memory device of claim 4 further comprising:

a cap wafer connected with the frame so that the media platform is arranged between the cap wafer and the tip die;

a capacitive sensor including a first electrode and a second electrode associated with the cap wafer, a third electrode associated with the media platform;

wherein movement of the media platform relative to the cap wafer is determinable based on a signal from the capacitive sensor.

8. A method of reading information from a probe storage memory device including a media and a plurality of tips communicably connectable with the media and assigned to a plurality of groups of tips comprising:

providing a signal to an electrical trace associated with a group of tips from the plurality of tips;

urging the group of tips toward the media so that the group of tips is in communication with the media;

communicating a signal to a portion of the media by providing a signal to an electrical trace associated with a tip from each of the plurality of groups of tips so that the signal is communicated to the tip of the group of tips in communication with the media; and

determining a bit state of the portion of the media die.

9. The memory device of claim 8 wherein a tip is connected with a tip platform by a cantilever pivotable at a fulcrum;

and

wherein urging the group of tips toward the media includes applying an electrostatic force to an end of each of the respective cantilevers so that the cantilever pivots at the fulcrum and urges the corresponding tip toward the media.

10. The memory device of claim 8, wherein communicating a signal to a portion of the media includes providing one of a current and a voltage to the tip.

11. The memory device of claim 9, wherein determining a bit state of the portion of the media die includes measuring an electrical resisitivity of the portion of the media die.

12. The memory device of claim 8, further comprising:

determining an adjustment in a position of a tip relative to a data track on the media;

providing a signal to an electrical trace associated with one tip from each of the plurality of tip groups;

urging the one tip from each of the plurality of tip groups so that the position of the tip relative to the data track is changed.

13. The memory device of claim 12 wherein a tip is connected with a tip platform by a cantilever;

and

wherein urging the one tip from each of the plurality of tip groups includes applying an electrostatic force to the respective cantilevers so that the cantilever pivots and urges the corresponding tip relative to the data track.

14. The memory device of claim 13, wherein communicating a signal to a portion of the media includes providing one of a current and a voltage to the tip.

15. A memory device for a probe storage system comprising:

a memory device controller;

a media die including a frame and a media platform movably coupled with the frame;

a tip die connected with the frame such that the tip die is generally parallel to the media platform, the tip die including a plurality of tip groups, wherein a tip group includes a number of tips connected with the tip die by a cantilever;

a set of electrical traces connected between the media platform and the memory device controller, a number of electrical traces of the set of electrical traces corresponding to the number of tips;

wherein the set of electrical traces is selectably associable with one of the tip groups so that the tips of the associated tip group are in electrical communication with the media die.

16. The memory device of claim 15, wherein the set of electrical traces is selectably associable with the one of the tip groups by urging cantilevers associated with the tip group so that the number of tips of the tip group contacts the media platform.

17. The memory device of claim 16, wherein the cantilevers are urged by electrostatic force.

18. The memory device of claim 15 further comprising:

an electromagnetic motor connected between the movable platform and the tip die.

19. The memory device of claim 18, further comprising:

a planar offset electrical trace connected between the memory device controller and a cantilever associated with one tip from each of the plurality of tip groups; and

wherein a tip is movable in a plane of the media platform by urging a corresponding cantilever; and

wherein the corresponding cantilever is urged by providing a signal to the planar offset electrical trace.