PROCESS FOR FORMING A PATTERNED THIN FILM STRUCTURE ON A SUBSTRATE

• US 20080075839A1
• Filed: 07/12/2007
• Published: 03/27/2008
• Est. Priority Date: 04/24/2002
• Status: Active Grant

• Current Assignee: E Ink California, LLC (E Ink Corporation), ETANSI, Inc.
• Original Assignee: SiPix Imaging, Inc. (E Ink Holdings Incorporated), ETANSI, Inc.
• Inventors: Wu, Zarng-Arh, Haubrich, Jeanne, Liang, Rong-Chang, Chaug, Yi-Shung, Wang, Xiaojia
• Granted Patent: US 8,002,948 B2
• Time in Patent Office: Days
• US Class Current: 427/66
• CPC Class Codes: B05D 1/325 Masking layer made of peelable film
• CPC Class Codes: H05K 2201/0209 Inorganic, non-metallic particles
• CPC Class Codes: H05K 2201/0212 Resin particles
• CPC Class Codes: H05K 3/048 using a lift-off resist pattern or a release layer pattern
• CPC Class Codes: Y10T 156/1111 Using solvent during delaminating [e.g., water dissolving adhesive at bonding face during delamination, etc.]
• CPC Class Codes: Y10T 156/1116 Using specified organic delamination solvent
• CPC Class Codes: Y10T 156/1121 Using vibration during delaminating

Abstract

A process for forming a patterned thin film structure on a substrate is disclosed. A pattern is printed with a material, such as a masking coating or an ink, on the substrate, the pattern being such that, in one embodiment, the desired thin film structures will be formed in the areas where the printed material is not present, i.e., a negative image of thin film structure to be formed is printed. In another embodiment, the pattern is printed with a material that is difficult to strip from the substrate, and the desired thin film structures will be formed in the areas where the printed material is present, i.e., a positive image of the thin film structure is printed. The thin film material is deposited on the patterned substrate, and the undesired area is stripped, leaving behind the patterned thin film structures.

Claims

1. A process for forming a thin film structure on a substrate, comprising:

a) printing a negative image of the thin film structure on the substrate using a strippable material comprising a re-dispersible particulate having a hydrophilic surface, such that the strippable material is present in areas on the substrate where the thin film structure is not to be formed and the strippable material is substantially not present in areas on the substrate where the thin film structure is to be formed;

b) depositing a thin film material on the substrate; and

c) stripping the strippable material from the substrate;

whereby the strippable material and any thin film material formed thereon are removed by said stripping leaving behind the thin film structure.

2. The process of claim 1, wherein the strippable material comprises 5-80% by weight of the re-dispersible particulate.

3. The process of claim 1, wherein the strippable material comprises 10-60% by weight of the re-dispersible particulate.

4. The process of claim 1, wherein the strippable material comprises a water soluble or water dispersible polymer.

5. The process of claim 4, wherein said water soluble polymer is selected from the group consisting of polyvinyl alcohol, polyvinylpyrrolidone, polyvinylpyridine, polyacrylic acid, polymethacrylic acid, polyacrylamide, polyethyleneglycol, poly(ethylene-co-maleic anhydride), poly(vinylether-co-maleic anhydride), poly(styrene-co-maleic anhydride), poly(butyelene-co-itaconic acid), PEOX, polystyrene sulfonate, cellulose derivatives such as hydroxyethyl cellulose, hydroxypropyl cellulose, methyl cellulose, carboxymethyl cellulose, xanthan gum, gum Arabic, gelatin, lecitin and copolymers thereof.

6. The process of claim 4, wherein said water dispersible polymer is selected from the group consisting of water dispersible wax, alkaline dispersible wax, polyolefin, acrylic latexes and dispersions.

7. The process of claim 1, wherein the strippable material comprises a solvent soluble or solvent dispersible polymer.

8. The process of claim 1, wherein the re-dispersible particulate is derived from silica, CaCO₃, CaSO₄, BaSO₄, Al₂O₃, TiO₂, hollow-spheres, non-film-forming latexes or dispersions, inorganic pigment or organic pigment.

9. The process of claim 1, wherein the re-dispersible particulate is a polymeric particle or a polymeric composite particle.

10. The process of claim 1, wherein the strippable material comprises an additive selected from the group consisting of surfactants, dyes, curing agents and plasticizers.

11. The process of claim 1, wherein step (c) comprises using a solvent to remove the strippable material.

12. The process of claim 11, wherein the solvent is selected from the group consisting of water, aqueous solutions, alcohols, ketones, esters, ethers, amides, hydrocarbons, alkylbenzenes, pyrrolidones, sulfones, DMSO and mixtures or derivatives thereof.

13. The process of claim 1, wherein step (c) comprises using mechanical pressure to remove the strippable material.

14. The process of claim 13, wherein said mechanical pressure comprises brushing.

15. The process of claim 13, wherein said mechanical pressure comprises using a spray nozzle.

16. The process claim 1, wherein step (c) comprises:

i) applying an adhesive layer having an adhesive strength with respect to the thin film material and/or strippable material higher than that of the strippable material to the substrate; and

ii) removing the strippable material and any thin film material formed thereon by peeling off the adhesive layer.

17. The process of claim 1, wherein step (c) comprises:

i) applying an adhesive layer; and

ii) removing the strippable material and any thin film material formed thereon by peeling off the adhesive layer.

18. The process of claim 17, wherein the cohesion strength of the thin film material and the adhesion strength between thin film material and the substrate are stronger than any of the three forces:

the cohesion strength of the strippable material, the adhesion strength between the thin film material and the strippable material, and the adhesion strength between the strippable material and the substrate.

19. The process of claim 1, wherein the thin film material is non-conductive, semi-conductive or conductive.

20. The process of claim 19, wherein the conductive thin film material is a material selected from the group consisting of metals, metal oxides, and alloys or multilayer composites thereof.

21. The process of claim 20, wherein the metal is selected from the group consisting of aluminum, copper, zinc, tin, molybdenum, nickel, chromium, silver, gold, iron, indium, thallium, titanium, tantalum, tungsten, rhodium, palladium, platinum and cobalt.

22. The process of claim 20, wherein the metal oxide is selected from the group consisting of indium tin oxide (ITO), indium zinc oxide (IZO), aluminum zinc oxide, gadolinium indium oxide, tin oxide and fluorine-doped indium oxide.

23. The process of claim 1, wherein step (b) comprises sputtering, vapor deposition, vacuum deposition, electroplating, electro-less plating or electroforming.

24. The process of claim 1, wherein step (a) comprises flexographic printing, driographic printing, electrophotographic printing, lithographic printing, gravure printing, thermal printing, inkjet printing or screen printing.

25. The process of claim 1, wherein the substrate comprises a plastic substrate.

26. The process of claim 25, wherein the thin film structure comprises a flexible printed circuit board or a portion of a flexible printed circuit board.

27. The process of claim 1, wherein the thin film structure comprises an electrode.

28. The process of claim 27, wherein the electrode is a segment electrode, column electrode, row electrode or pixel electrode.

29. The process of claim 1, wherein the thin film structure comprises a conductive trace.

30. The process of claim 1, further comprising forming a second thin film structure on the substrate by repeating steps (a), (b) and (c) in a different area of the substrate.

31. The process of claim 30, wherein step (a) for forming the second thin film structure is carried out separately from step (a) for forming the first thin film structure and steps (b) and (c) for forming the second thin film structure are carried out together with steps (b) and (c) for forming the first thin film structure.