METHOD FOR ANNEALING PHOTOVOLTAIC CELLS
First Claim
1. Method for annealing at least one photovoltaic cell comprising a substrate based on silicon with a first type of conductivity, a layer doped with a second type of conductivity produced in the substrate and forming a front face of the substrate, an antireflection layer produced on the front face of the substrate and forming a front face of the photovoltaic cell, at least one metallization on the front face of the photovoltaic cell and at least on metallization on a rear face of the substrate, which method comprising at least the steps of:
- a) a first annealing of the photovoltaic cell at a temperature between around 700°
C. and 900°
C.,b) a second annealing of the photovoltaic cell at a temperature between around 200°
C. and 500°
C., at ambient pressure and in ambient air,with hydrogen being diffused in the substrate during the process.
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Accused Products
Abstract
Method for annealing at least one photovoltaic cell comprising a substrate based on silicon with a first type of conductivity, a layer doped with a second type of conductivity produced in the substrate and forming a front face of the substrate, an antireflection layer produced on the front face of the substrate and forming a front face of the photovoltaic cell, at least one metallization on the front face of the cell and at least on metallization on a rear face of the substrate. This method comprises at least the steps of:
- a) a first annealing of the photovoltaic cell at a temperature between around 700° C. and 900° C.,
- b) a second annealing of the photovoltaic cell at a temperature between around 200° C. and 500° C., at ambient pressure and in ambient air,
- with hydrogen being diffused in the substrate during the process.
13 Citations
15 Claims
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1. Method for annealing at least one photovoltaic cell comprising a substrate based on silicon with a first type of conductivity, a layer doped with a second type of conductivity produced in the substrate and forming a front face of the substrate, an antireflection layer produced on the front face of the substrate and forming a front face of the photovoltaic cell, at least one metallization on the front face of the photovoltaic cell and at least on metallization on a rear face of the substrate, which method comprising at least the steps of:
-
a) a first annealing of the photovoltaic cell at a temperature between around 700°
C. and 900°
C.,b) a second annealing of the photovoltaic cell at a temperature between around 200°
C. and 500°
C., at ambient pressure and in ambient air,with hydrogen being diffused in the substrate during the process. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15)
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Specification