Method of Forming A Metallic Oxide Film Using Atomic Layer Deposition

• US 20080075881A1
• Filed: 07/26/2007
• Published: 03/27/2008
• Est. Priority Date: 07/26/2006
• Status: Abandoned Application

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electronics Co. Ltd.
• Inventors: Won, Seok-jun, Park, Jung-min, Kim, Ju-youn
• Application Number:
  US11/828,897
• Publication Number:
  US 20080075881A1
• Time in Patent Office: Days
• US Class Current: 427/539
• CPC Class Codes: C23C 16/40 Oxides
• CPC Class Codes: C23C 16/4405 Cleaning of reactor or parts inside the reactor by using reactive gases
• CPC Class Codes: C23C 16/515 using pulsed discharges

Abstract

A method of forming a metallic oxide film using atomic layer deposition includes loading a substrate into a reactor, supplying a metallic source gas into the reactor and absorbing the metallic source gas onto the substrate, purging the remaining metallic source gas that does not react, with the substrate, and directly producing plasma of an N-group-containing oxide reactant gas in the reactor.

Claims

1. A method of forming a metallic oxide film using Atomic Layer Deposition, the method comprising:

loading a substrate into a reactor;

supplying a metallic source gas into the reactor and absorbing at least some of the metallic source gas onto the substrate;

purging the remaining metallic source gas that does not react with the substrate; and

supplying plasma of an N-group containing oxide reactant gas into the reactor.

2. The method of claim 1, wherein supplying plasma of an N-group containing oxide reactant gas into the reactor comprises supplying an N-group containing oxide reactant gas into the reactor and directly producing plasma by supplying plasma power to the reactor.

3. The method of claim 2, wherein the N-group-containing oxide reactant gas is N₂O, NO, or NO₂.

4. The method of claim 2, wherein a non-N-group oxide reactant gas is supplied together with the N-group-containing oxide reactant gas in the producing of plasma.

5. The method of claim 4, wherein the non-N-group oxide reactant gas is O₂, O₃, H₂O, or a mixture thereof.

6. The method of claim 4, wherein the ratio of the N-group-containing oxide reactant gas and the non-N-group oxide reactant gas is about ⅛

or more.

7. The method of claim 1, wherein an inert gas is supplied together with the metallic source gas.

8. The method of claim 7, wherein the inert gas is Ar, He, Kr, Xe, or a mixture thereof.

9. The method of claim 1, further comprising supplying a purge gas wherein the remaining non-reacting metallic source gas is purged.

10. The method of claim 1, further comprising purging the oxide reactant gas after producing the plasma.

11. The method of claim 1, wherein the supplying of a metallic source gas, the purging of the metallic source gas, and the producing of plasma of an oxide reactant gas are repetitively applied.

12. The method of claim 1, wherein the metallic oxide film is a hafnium oxide film, zirconium oxide film, aluminum oxide film, titanium oxide film, tantalum oxide film, lanthanum oxide film, praseodymium oxide film, tungsten oxide film, niobium oxide film, molybdenum oxide film, strontium oxide film, barium oxide film, or a combination of thereof.

13. The method of claim 1, wherein the metallic oxide film is a ruthenium oxide film, a iridium oxide film, or a combination of thereof.

14. The method of claim 1, wherein the reactor comprises an inner chamber and an outer chamber and the substrate is provided in the inner chamber.

17. The method of claim 1, wherein the reactor is a lateral flow type.

15. The method of claim 15, wherein the volume of the inner chamber is about 2000 cc or less.

16. The method of claim 16, wherein the volume of the inner chamber is about 1000 cc or less.

18. A method of forming a metallic oxide film using Atomic Layer Deposition, the method comprising;

loading a substrate into a reactor;

supplying a metallic source gas into the reactor and absorbing at least some of the metallic source gas onto the substrate;

purging the metallic source gas with an N-group-containing oxide reactant gas; and

directly producing plasma of the N-group-containing oxide reactant gas by supplying plasma power to the reactor.

19. The method of claim 18, wherein the oxide reactant gas comprises a non-N-group oxide reactant gas.

20. The method of claim 18, further comprising purging the oxide reactant gas.

21. The method of claim 20, wherein the steps of supplying a metallic source gas, purging the metallic source gas, directly producing plasma, and purging the oxide reactant gas are repetitively applied.