X-Y Address type solid state image pickup device and method of producing the same

• US 20080076202A1
• Filed: 10/30/2007
• Published: 03/27/2008
• Est. Priority Date: 07/11/2001
• Status: Active Grant

• Current Assignee: Sony Corporation (Sony Group Corp.)
• Original Assignee: Sony Corporation (Sony Group Corp.)
• Inventors: Mori, Tomonori, Suzuki, Ryoji, Mabuchi, Keiji
• Granted Patent: US 9,455,293 B2
• Time in Patent Office: Days
• US Class Current: 438/60
• CPC Class Codes: H01L 27/14609 Pixel-elements with integrated switching, control, storage or amplification elements scanning details of imagers (circuitry of solid-state image sensors H04N25/00); circuitry of imagers H04N25/70
• CPC Class Codes: H01L 27/14621 Colour filter arrangements
• CPC Class Codes: H01L 27/14623 Optical shielding
• CPC Class Codes: H01L 27/14627 Microlenses
• CPC Class Codes: H01L 27/14632 Wafer-level processed structures
• CPC Class Codes: H01L 27/1464 Back illuminated imager structures
• CPC Class Codes: H01L 27/14643 Photodiode arrays; MOS imagers
• CPC Class Codes: H01L 27/14685 Process for coatings or optical elements
• CPC Class Codes: H01L 27/14687 Wafer level processing
• CPC Class Codes: H01L 27/14689 MOS based technologies
• CPC Class Codes: H01L 31/02164 for shielding light, e.g. light blocking layers, cold shields for infrared detectors
• CPC Class Codes: H01L 31/0232 Optical elements or arrangements associated with the device H01L31/0236 takes precedence; for photovoltaic cells H01L31/054; for photovoltaic modules H02S40/20
• CPC Class Codes: H01L 31/02327 the optical elements being integrated or being directly associated to the device, e.g. back reflectors optical coatings H01L31/0216
• CPC Class Codes: H04N 25/79 Arrangements of circuitry being divided between different or multiple substrates, chips or circuit boards, e.g. stacked image sensors

Abstract

In an X-Y address type solid state image pickup device represented by a CMOS image sensor, a back side light reception type pixel structure is adopted in which a wiring layer is provided on one side of a silicon layer including photo-diodes formed therein, and visible light is taken in from the other side of the silicon layer, namely, from the side (back side) opposite to the wiring layer. Wiring can be made without taking a light-receiving surface into account, and the degree of freedom in wiring for the pixels is enhanced.

Claims

1-4. -4. (canceled)

5. A method of producing an X-Y address type solid-state image pickup device comprising a plurality of unit pixels each comprising an active device for converting a signal charge obtained through photo-electric conversion by a photo-electric conversion device into an electrical signal and outputting said electrical signal, said unit pixels being arranged in a matrix form, said method comprising sequentially:

a first step of forming said photo-electric conversion devices and said active devices;

a second step of forming a wiring layer comprising wirings for said active devices, on one side of a device layer comprising said photo-electric conversion devices and said active devices; and

a third step of polishing the other side of said device layer so that the thickness of said substrate becomes a predetermined thickness.

6. A method of producing an X-Y address type solid-state image pickup device as set forth in claim 5, wherein

polishing is conducted in said third step so that the thickness of said substrate becomes in the range of 5 to 15 μ

m.