METHOD FOR PRODUCING AN INTEGRATED CIRCUIT WITH A TRENCH TRANSISTOR STRUCTURE
First Claim
1. A method for producing an integrated circuit including a trench transistor structure comprising:
- providing a semiconductor body having a first and a second side and having a cell region;
carrying out a first diffusion method, including introducing dopant atoms of a first conduction type via the first side into a mesa region and into a component region lying outside the cell region, which form a body zone in the mesa region; and
carrying out a second diffusion method, by introducing dopant atoms of a second conduction type into the mesa region and into the component region, which form a source zone in the mesa region, the diffusion methods being coordinated such that the dopant atoms of the second conduction type indiffuse further than the dopant atoms of the first conduction type in a vertical direction in the component region and indiffuse not as far as the dopant atoms of the first conduction type in the vertical direction in the mesa region.
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Abstract
A method for producing an integrated circuit including a semiconductor and in one embodiment a trench transistor structure, is disclosed. A first diffusion method is carried out. A second diffusion method is carried out, by which dopant atoms of a second conduction type are introduced via a first side into a mesa region and into a component region, which form a source zone in the mesa region, the diffusion methods being coordinated with one another in such a way that the dopant atoms of a second conduction type indiffuse further than the dopant atoms of a first conduction type from the first diffusion method, in the vertical direction in the component region and indiffuse not as far as the dopant atoms of the first conduction type in the vertical direction in the mesa region.
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Citations
24 Claims
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1. A method for producing an integrated circuit including a trench transistor structure comprising:
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providing a semiconductor body having a first and a second side and having a cell region;
carrying out a first diffusion method, including introducing dopant atoms of a first conduction type via the first side into a mesa region and into a component region lying outside the cell region, which form a body zone in the mesa region; and
carrying out a second diffusion method, by introducing dopant atoms of a second conduction type into the mesa region and into the component region, which form a source zone in the mesa region, the diffusion methods being coordinated such that the dopant atoms of the second conduction type indiffuse further than the dopant atoms of the first conduction type in a vertical direction in the component region and indiffuse not as far as the dopant atoms of the first conduction type in the vertical direction in the mesa region. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A method for producing an integrated circuit including a semiconductor having a source zone and a body zone of a trench transistor structure and a component zone having a net doping of the same conduction type as the source zone, comprising:
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providing a semiconductor body, including at least two trenches and between which a mesa region is arranged;
carrying out a first diffusion method, by which dopant atoms of a first conduction type are introduced via a first side into the mesa region and into a component region lying outside the cell region; and
carrying out a second diffusion method, by which dopant atoms of a second conduction type are introduced via the first side into the mesa region and into the component region, which form the source zone in the mesa region, the diffusion methods being coordinated with one another in such a way that the dopant atoms of the second conduction type indiffuse further than the dopant atoms of the first conduction type in the vertical direction in the component region. - View Dependent Claims (8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23)
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24. A method for producing an integrated circuit including a source zone and a body zone of a trench transistor structure and a component zone having a net doping of the same conduction type as the source zone, comprising:
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providing a semiconductor body having a cell region, in which are arranged at least two trenches, and a mesa region;
carrying out a first diffusion method, which forms the body zone in the mesa region; and
carrying out a second diffusion method, which forms the source zone in the mesa region, the diffusion methods being coordinated with one another in such a way that dopant atoms of the second diffusion method indiffuse further than dopant atoms of the first diffusion method in a vertical direction in the component region, and indiffuse not as far as the dopant atoms of the first diffusion method in the vertical direction in the mesa region.
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Specification