Mechanical pump operating well for a long term and method of manufacturing the same

• US 20080078503A1
• Filed: 10/02/2007
• Published: 04/03/2008
• Est. Priority Date: 10/03/2006
• Status: Abandoned Application

• Current Assignee: Foundation for Advancement of International Science, National University Corporation Chiba University
• Original Assignee: Foundation for Advancement of International Science, National University Corporation Chiba University
• Inventors: Akutsu, Isao, OHMI, Tadahiro
• Application Number:
  US11/905,580
• Publication Number:
  US 20080078503A1
• Time in Patent Office: Days
• US Class Current: 156/345.1
• CPC Class Codes: C23C 16/4412 Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
• CPC Class Codes: C23C 26/00 Coating not provided for in groups C23C2/00 - C23C24/00
• CPC Class Codes: F04C 18/16 with helical teeth, e.g. chevron-shaped, screw type for non-parallel axes of movement F04C18/48
• CPC Class Codes: F04C 2220/12 Dry running
• CPC Class Codes: F04C 2230/91 Coating
• CPC Class Codes: F04C 2280/02 Preventing solid deposits in pumps, e.g. in vacuum pumps with chemical vapour deposition [CVD] processes
• CPC Class Codes: F04C 25/02 for producing high vacuum sealing arrangements F04C27/00; silencing F04C29/06
• CPC Class Codes: F04C 29/04 Heating; Cooling of machines or engines in general F01P; Heat insulation heat insulation in general F16L59/00
• CPC Class Codes: F05C 2201/043 Rare earth metals, e.g. Sc, Y
• CPC Class Codes: Y10T 117/10 Apparatus

Abstract

A mechanical pump of the present invention is applied to, for example, a screw pump A for exhausting a gas from a processing chamber. The screw pump comprises a gas-exposed region exposed to the gas and an yttria (Y₂O₃) film formed on the gas-exposed region.

Claims

1. A mechanical pump for exhausting a gas and comprising a gas-exposed region exposed to the gas and an yttria film formed on said gas-exposed region.

2. The mechanical pump according to claim 1, wherein the thickness of said yttria film is in a range of 0.1 to 10 μ

m.

3. The mechanical pump according to claim 1, wherein said pump further comprises a temperature control means which maintains the temperature of said gas-exposed region within a range of 80 to 250°

C.

4. The mechanical pump according to claim 3, wherein said temperature control means includes a heating means for heating said gas-exposed region.

5. The mechanical pump according to claim 3, wherein said temperature control means uses compression heat caused by the operation of said pump and/or frictional heat caused by the motion of a movable member.

6. A semiconductor manufacturing apparatus comprising said mechanical pump according to claim 1, a processing chamber in which a process is performed with the use of a gas and in which the gas is exhausted by said mechanical pump, and a piping connecting between said processing chamber and said mechanical pump;

said apparatus further comprising a passivation film formed on an inner surface of at least one of said processing chamber and said piping.

7. A thin-shaped display manufacturing apparatus comprising said mechanical pump according to claim 1, a processing chamber in which a process is performed with the use of a gas and in which the gas is exhausted by said mechanical pump, and a piping connecting between said processing chamber and said mechanical pump;

said apparatus further comprising a passivation film formed on an inner surface of at least one of said processing chamber and said piping.

8. A photovoltaic cell manufacturing apparatus comprising said mechanical pump according to claim 1, a processing chamber in which a process is performed with the use of a gas and in which the gas is exhausted by said mechanical pump, and a piping connecting between said processing chamber and said mechanical pump;

said apparatus further comprising a passivation film formed on an inner surface of at least one of said processing chamber and said piping.

9. A method of manufacturing said mechanical pump according to claim 1, the method comprising a step of forming said yttria film by a sol-gel process.

10. The method according to claim 9, wherein the sol-gel process involves a heat treating in a range of 250 to 1000°

C.