Semiconductor device
First Claim
1. A semiconductor device comprising:
- a photoelectric conversion element;
a current mirror circuit including a reference thin film transistor and an output thin film transistor, the current mirror circuit amplifying an output of the photoelectric conversion element; and
a power supply including a high-potential electrode and a low-potential electrode,wherein both the reference thin film transistor and the output thin film transistor are n-type thin film transistors,wherein one of source and drain electrodes of the reference thin film transistor is electrically connected to the high-potential electrode through the photoelectric conversion element,wherein one of source and drain electrodes of the output thin film transistor is electrically connected to the high-potential electrode,wherein the other of the source and drain electrodes of the reference thin film transistor is electrically connected to the low-potential electrode,wherein the other of the source and drain electrodes of the output thin film transistor is electrically connected to the low-potential electrode, andwherein the reference thin film transistor is placed closer to the low-potential electrode than the output thin film transistor is.
1 Assignment
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Accused Products
Abstract
To suppress a decrease in photosensitivity of a photoelectric conversion element provided in a semiconductor device by reducing the parasitic resistance of an amplifier circuit. In addition, the amplifier circuit which amplifies the output current of the photoelectric conversion element is operated stably. A semiconductor device includes a photoelectric conversion element, a current mirror circuit having at least two thin film transistors, a high-potential power supply electrically connected to each of the thin film transistors, and a low-potential power supply electrically connected to each of the thin film transistors. When a reference thin film transistor is an n-type, the reference thin film transistor is placed closer to the low-potential power supply than an output thin film transistor is. When a reference thin film transistor is a p-type, the reference thin film transistor is placed closer to the high-potential power supply than an output thin film transistor is.
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Citations
24 Claims
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1. A semiconductor device comprising:
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a photoelectric conversion element; a current mirror circuit including a reference thin film transistor and an output thin film transistor, the current mirror circuit amplifying an output of the photoelectric conversion element; and a power supply including a high-potential electrode and a low-potential electrode, wherein both the reference thin film transistor and the output thin film transistor are n-type thin film transistors, wherein one of source and drain electrodes of the reference thin film transistor is electrically connected to the high-potential electrode through the photoelectric conversion element, wherein one of source and drain electrodes of the output thin film transistor is electrically connected to the high-potential electrode, wherein the other of the source and drain electrodes of the reference thin film transistor is electrically connected to the low-potential electrode, wherein the other of the source and drain electrodes of the output thin film transistor is electrically connected to the low-potential electrode, and wherein the reference thin film transistor is placed closer to the low-potential electrode than the output thin film transistor is. - View Dependent Claims (2, 3)
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4. A semiconductor device comprising:
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a photoelectric conversion element; a current mirror circuit including a reference thin film transistor and an output thin film transistor, the current mirror circuit amplifying an output of the photoelectric conversion element; and a power supply including a high-potential electrode and a low-potential electrode, wherein both the reference thin film transistor and the output thin film transistor are n-type thin film transistors, wherein one of source and drain electrodes of the reference thin film transistor is electrically connected to the high-potential electrode through the photoelectric conversion element, wherein one of source and drain electrodes of the output thin film transistor is electrically connected to the high-potential electrode, wherein the other of the source and drain electrodes of the reference thin film transistor is electrically connected to the low-potential electrode, wherein the other of the source and drain electrodes of the output thin film transistor is electrically connected to the low-potential electrode, and wherein a current path between the reference thin film transistor and the low-potential electrode is shorter than a current path between the output thin film transistor and the low-potential electrode. - View Dependent Claims (5, 6)
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7. A semiconductor device comprising:
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a photoelectric conversion element; a current mirror circuit including a reference thin film transistor and a plurality of output thin film transistors, the current mirror circuit amplifying an output of the photoelectric conversion element; and a power supply including a high-potential electrode and a low-potential electrode, wherein both the reference thin film transistor and the plurality of the output thin film transistors are n-type thin film transistors, wherein one of source and drain electrodes of the reference thin film transistor is electrically connected to the high-potential electrode through the photoelectric conversion element, wherein one of source and drain electrodes of the plurality of the output thin film transistors are electrically connected to the high-potential electrode, wherein the other of the source and drain electrodes of the reference thin film transistor is electrically connected to the low-potential electrode, wherein the other of the source and drain electrodes of the plurality of the output thin film transistors are electrically connected to the low-potential electrode, and wherein the reference thin film transistor is placed closer to the low-potential electrode than each of the plurality of the output thin film transistor is. - View Dependent Claims (8, 9)
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10. A semiconductor device comprising:
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a photoelectric conversion element; a current mirror circuit including a reference thin film transistor and a plurality of output thin film transistors, the current mirror circuit amplifying an output of the photoelectric conversion element; and a power supply including a high-potential electrode and a low-potential electrode, wherein both the reference thin film transistor and the plurality of the output thin film transistors are n-type thin film transistor, wherein one of source and drain electrodes of the reference thin film transistor is electrically connected to the high-potential electrode through the photoelectric conversion element, wherein one of source and drain electrodes of the plurality of the output thin film transistors are electrically connected to the high-potential electrode, wherein the other of the source and drain electrodes of the reference thin film transistor is electrically connected to the low-potential electrode, wherein the other of the source and drain electrodes of the plurality of the output thin film transistors are electrically connected to the low-potential electrode, and wherein a current path between the reference thin film transistor and the low-potential electrode is shorter than a current path between each of the plurality of the output thin film transistors and the low-potential electrode. - View Dependent Claims (11, 12)
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13. A semiconductor device comprising:
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a photoelectric conversion element; a current mirror circuit including a reference thin film transistor and an output thin film transistor, the current mirror circuit amplifying an output of the photoelectric conversion element; and a power supply including a high-potential electrode and a low-potential electrode, wherein both the reference thin film transistor and the output thin film transistor are p-type thin film transistors, wherein one of source and drain electrodes of the reference thin film transistor is electrically connected to the high-potential electrode, wherein one of source and drain electrodes of the output thin film transistor is electrically connected to the high-potential electrode, wherein the other of the source and drain electrodes of the reference thin film transistor is electrically connected to the low-potential electrode through the photoelectric conversion element, wherein the other of the source and drain electrodes of the output thin film transistor is electrically connected to the low-potential electrode, and wherein the reference thin film transistor is placed closer to the high-potential electrode than the output thin film transistor is. - View Dependent Claims (14, 15)
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16. A semiconductor device comprising:
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a photoelectric conversion element; a current mirror circuit including a reference thin film transistor and an output thin film transistor, the current mirror circuit amplifying an output of the photoelectric conversion element; and a power supply including a high-potential electrode and a low-potential electrode, wherein both the reference thin film transistor and the output thin film transistor are p-type thin film transistors, wherein one of source and drain electrodes of the reference thin film transistor is electrically connected to the high-potential electrode, wherein one of source and drain electrodes of the output thin film transistor is electrically connected to the high-potential electrode, wherein the other of the source and drain electrodes of the reference thin film transistor is electrically connected to the low-potential electrode through the photoelectric conversion element, wherein the other of the source and drain electrodes of the output thin film transistor is electrically connected to the low-potential electrode, and wherein a current path between the reference thin film transistor and the high-potential electrode is shorter than a current path between the output thin film transistor and the high-potential electrode. - View Dependent Claims (17, 18)
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19. A semiconductor device comprising:
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a photoelectric conversion element; a current mirror circuit including a reference thin film transistor and a plurality of output thin film transistors, the current mirror circuit amplifying an output of the photoelectric conversion element; and a power supply including a high-potential electrode and a low-potential electrode, wherein both the reference thin film transistor and the plurality of the output thin film transistors are p-type thin film transistors, wherein one of source and drain electrodes of the reference thin film transistor is electrically connected to the high-potential electrode, wherein one of source and drain electrodes of the plurality of the output thin film transistor are electrically connected to the high-potential electrode, wherein the other of the source and drain electrodes of the reference thin film transistor is electrically connected to the low-potential electrode through the photoelectric conversion element, wherein the other of the source and drain electrodes of the plurality of the output thin film transistors are electrically connected to the low-potential electrode, and wherein the reference thin film transistor is placed closer to the high-potential electrode than each of the plurality of the output thin film transistors is. - View Dependent Claims (20, 21)
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22. A semiconductor device comprising:
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a photoelectric conversion element; a current mirror circuit including a reference thin film transistor and a plurality of output thin film transistors, the current mirror circuit amplifying an output of the photoelectric conversion element; and a power supply including a high-potential electrode and a low-potential electrode, wherein both the reference thin film transistor and the plurality of the output thin film transistors are n-type thin film transistor, wherein one of source and drain electrodes of the reference thin film transistor is electrically connected to the high-potential electrode, wherein one of source and drain electrodes of the plurality of the output thin film transistor are electrically connected to the high-potential electrode, wherein the other of the source and drain electrodes of the reference thin film transistor is electrically connected to the low-potential electrode through the photoelectric conversion element, wherein the other of the source and drain electrodes of the plurality of the output thin film transistors are electrically connected to the low-potential electrode, and wherein a current path between the reference thin film transistor and the high-potential electrode is shorter than a current path between each of the plurality of the output thin film transistors and the high-potential electrode. - View Dependent Claims (23, 24)
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Specification