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SEMICONDUCTOR DEVICE WITH BULB-TYPE RECESSED CHANNEL AND METHOD FOR FABRICATING THE SAME

  • US 20080079048A1
  • Filed: 09/27/2007
  • Published: 04/03/2008
  • Est. Priority Date: 09/29/2006
  • Status: Active Grant
First Claim
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1. A method for fabricating a semiconductor device, the method comprising:

  • providing a substrate having a bulb-type recessed region;

    forming a gate insulating layer over the bulb-type recessed region and the substrate; and

    forming a gate conductive layer over the gate insulating layer and filling the bulb-type recessed region, wherein the gate conductive layer includes two or more conductive layers and a discontinuous interface between the conductive layers.

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