INVERTER
First Claim
1. An inverter, comprising:
- a driver transistor having a bottom gate transistor structure; and
a load transistor having a top gate transistor structure.
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Accused Products
Abstract
Provided are a structure and fabricating method of a new inverter for controlling a threshold voltage of each location when an inverter circuit is manufactured using an organic semiconductor on a plastic substrate.
In general, p-type organic semiconductor is stable. Accordingly, when the inverter is formed of only the p-type semiconductor, a D-inverter composed of a depletion load and an enhancement driver has large gains, wide swing width and low power consumption, which is more preferable than an E-inverter composed of an enhancement load and an enhancement driver. However, it is impossible to form a depletion transistor and an enhancement transistor on the same substrate while controlling them by locations.
To overcome such a difficulty, the structure of the inverter in which a bottom gate organic semiconductor transistor showing enhancement type characteristics is used as a driver transistor, and a top gate organic semiconductor transistor showing depletion type characteristics is used as a load transistor, and a manufacturing method thereof are proposed. According to this structure, a passivation effect of an organic semiconductor may be additionally obtained by a second insulating layer and a second gate electrode material which are on top of the organic semiconductor, and a high degree of integration may also be improved.
61 Citations
18 Claims
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1. An inverter, comprising:
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a driver transistor having a bottom gate transistor structure; and a load transistor having a top gate transistor structure. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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14. An inverter, comprising:
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a gate electrode of a driver transistor formed on a substrate; a first insulating layer covering the gate electrode of the driver transistor; a source electrode of a driver transistor, a single electrode forming a drain electrode of the driver transistor and a source electrode of a load transistor, and a drain electrode of the load transistor, all of them are formed on the first insulating layer; an organic semiconductor layer formed on the first insulating layer exposed between the source and drain electrodes; a second insulating layer covering the source and drain electrodes and the organic semiconductor layer; and a top gate electrode of the load transistor formed on the second insulating layer. - View Dependent Claims (15, 16, 17, 18)
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Specification