Method for forming a dielectric film on a substrate

• US 20080081126A1
• Filed: 09/29/2006
• Published: 04/03/2008
• Est. Priority Date: 09/29/2006
• Status: Abandoned Application

• Current Assignee: Globe Union Industrial Corporation
• Original Assignee: Globe Union Industrial Corporation
• Inventors: Lo, Wen-Li, Ho, Chu-Liang
• Application Number:
  US11/529,307
• Publication Number:
  US 20080081126A1
• Time in Patent Office: Days
• US Class Current: 427/569
• CPC Class Codes: C23C 16/402 Silicon dioxide
• CPC Class Codes: C23C 16/515 using pulsed discharges

Abstract

A method for forming a dielectric film on a substrate through reaction of a reactant mixture in a deposition chamber, the reactant mixture being dissociated and ionized by a plasma generated in the deposition chamber. In particular, the method includes applying a first working voltage of a first polarity to an electrode in the deposition chamber for enabling dissociation and ionization of the reactant mixture, and removing undesired electrical charge accumulated on the deposited dielectric film on the substrate by for example, applying a second working voltage of a second polarity to the electrode.

Claims

1. A method for forming a dielectric film on a substrate through reaction of a reactant mixture in a deposition chamber, the reactant mixture being dissociated and ionized by a plasma generated in the deposition chamber, the method comprising:

applying a bipolar pulse to an electrode in the deposition chamber such that the bipolar pulse has a cycle time including a first period of a first working voltage of a first polarity for enabling dissociation and ionization of the reactant mixture, and a second period of a second working voltage of a second polarity for removing undesired electrical charges accumulated on the deposited dielectric film on the substrate, the second polarity being opposite to the first polarity.

2. The method of claim 1, wherein the bipolar pulse has a duty cycle defined as the ratio of the first period to the cycle time and ranging from 40 to 95%.

3. The method of claim 2, wherein the duty cycle ranges from 60 to 95%.

4. The method of claim 2, wherein the duty cycle ranges from 80 to 95%.

5. The method of claim 1, wherein the first working voltage has a negative polarity and ranges from −

100 V to −

400 V.

6. The method of claim 5, wherein the first working voltage ranges from −

100 V to −

300 V.

7. The method of claim 6, wherein the second working voltage has a positive polarity and ranges from larger than 0 V to +75 V.

8. The method of claim 1, wherein the reactant mixture includes an oxidant selected from the group consisting of oxygen gas and ozone gas, and an organosilicon material selected from the group consisting of tetramethyldisiloxane (TMDSO) and hexamethyldisiloxane (HMDSO), and is carried by an argon gas to flow into the deposition chamber.

9. The method of claim 8, wherein the oxidant is oxygen gas, the volume flow rate of the oxygen gas to the argon gas ranging from 1:

2 to 2;

1.

10. The method of claim 1, wherein the bipolar pulse has a frequency equal to the inverse of the cycle time and ranging from 10 to 250 kHz.

11. The method of claim 1, wherein the deposition chamber is maintained in a working pressure ranging from 1 Pa to 100 Pa during application of the bipolar pulse to the electrode.

12. The method of claim 1, wherein the deposition chamber is maintained in a working pressure ranging from 1 Pa to 10 Pa during application of the bipolar pulse to the electrode.

13. A method for forming a dielectric film on a substrate through reaction of a reactant mixture in a deposition chamber, the reactant mixture being dissociated and ionized by a plasma generated in the deposition chamber, the method comprising:

applying a first working voltage of a first polarity to an electrode in the deposition chamber for enabling dissociation and ionization of the reactant mixture; and

removing undesired electrical charges accumulated on the deposited dielectric film on the substrate.

14. The method of claim 13, wherein application of the first working voltage to the electrode is conducted intermittently, and removal of the undesired electrical charges accumulated on the deposited dielectric film is conducted at the interval of the application of the first working voltage.

15. The method of claim 14, wherein removal of the undesired electrical charges accumulated on the deposited dielectric film is conducted by applying a second working voltage of a second polarity opposite to the first polarity to the electrode.

16. The method of claim 15, wherein the first working voltage has a negative polarity and ranges from −

100 V to −

400 V.

17. The method of claim 16, wherein the first working voltage ranges from −

100 V to −

300 V.

18. The method of claim 17, wherein the second working voltage has a positive polarity and ranges from larger than 0 V to +75 V.

19. The method of claim 13, wherein the reactant mixture includes an oxidant selected from the group consisting of oxygen gas and ozone gas, and an organosilicon material selected from the group consisting of tetramethyldisiloxane (TMDSO) and hexamethyldisiloxane (HMDSO), and is carried by an argon gas to flow into the deposition chamber.

20. The method of claim 19, wherein the oxidant is oxygen gas, the volume flow rate of the oxygen gas to the argon gas ranging from 1:

2 to 2;

1.