Vapor deposited nanometer functional coating adhered by an oxide layer

• US 20080081151A1
• Filed: 10/26/2007
• Published: 04/03/2008
• Est. Priority Date: 06/04/2004
• Status: Abandoned Application

• Current Assignee: Applied Microstructures, Inc. (KLA Corporation)
• Original Assignee: Applied Microstructures, Inc. (KLA Corporation)
• Inventors: Nowak, Romuald, Kobrin, Boris, Yi, Richard, Chinn, Jeffrey
• Application Number:
  US11/978,123
• Publication Number:
  US 20080081151A1
• Time in Patent Office: Days
• US Class Current: 428/141
• CPC Class Codes: B05D 1/185 applying monomolecular layers B05D1/204 takes precedence
• CPC Class Codes: B05D 1/60 Deposition of organic layers from vapour phase vapour phase deposition in general C23C14/00, C23C16/00
• CPC Class Codes: B05D 3/142 Pretreatment
• CPC Class Codes: B05D 3/145 After-treatment
• CPC Class Codes: B05D 7/52 Two layers
• CPC Class Codes: B05D 7/56 Three layers or more
• CPC Class Codes: B82Y 30/00 Nanotechnology for materials or surface science, e.g. nanocomposites
• CPC Class Codes: B82Y 40/00 Manufacture or treatment of nanostructures
• CPC Class Codes: C03C 17/42 at least one coating of an organic material and at least one non-metal coating
• CPC Class Codes: C03C 23/006 by plasma or corona discharge
• CPC Class Codes: C23C 16/0227 by cleaning or etching
• CPC Class Codes: C23C 16/0245 by etching with a plasma
• CPC Class Codes: C23C 16/0272 Deposition of sub-layers, e.g. to promote the adhesion of the main coating
• CPC Class Codes: C23C 16/401 containing silicon
• CPC Class Codes: C23C 16/402 Silicon dioxide
• CPC Class Codes: C23C 16/448 characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
• CPC Class Codes: C23C 16/4485 by evaporation without using carrier gas in contact with the source material C23C16/4486 takes precedence
• CPC Class Codes: C23C 16/455 characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
• CPC Class Codes: C23C 16/45557 Pulsed pressure or control pressure
• CPC Class Codes: C23C 16/56 After-treatment
• CPC Class Codes: Y10T 428/12618 : Plural oxides
• CPC Class Codes: Y10T 428/12632 : Four or more distinct components with alternate recurrence of each type component
• CPC Class Codes: Y10T 428/24 : Structurally defined web or sheet [e.g., overall dimension, etc.]
• CPC Class Codes: Y10T 428/24355 : Continuous and nonuniform or irregular surface on layer or component [e.g., roofing, etc.]
• CPC Class Codes: Y10T 428/24967 : Absolute thicknesses specified
• CPC Class Codes: Y10T 428/24975 : No layer or component greater than 5 mils thick
• CPC Class Codes: Y10T 428/261 : In terms of molecular thickness or light wave length
• CPC Class Codes: Y10T 428/265 : 1 mil or less
• CPC Class Codes: Y10T 428/31663 : As siloxane, silicone or silane
• CPC Class Codes: Y10T 428/31667 : Next to addition polymer from unsaturated monomers, or aldehyde or ketone condensation product

Abstract

An improved vapor-phase deposition method and apparatus for the application of multilayered films/coatings on substrates is described. The method is used to deposit multilayered coatings where the thickness of an oxide-based layer in direct contact with a substrate is controlled as a function of the chemical composition of the substrate, whereby a subsequently deposited layer bonds better to the oxide-based layer. The improved method is used to deposit multilayered coatings where an oxide-based layer is deposited directly over a substrate and a SAM organic-based layer is directly deposited over the oxide-based layer. Typically a series of alternating layers of oxide-based layer and organic-based layer are applied.

Claims

1-11. -11. (canceled)

12. A method of depositing a multilayered coating on a substrate, where the coating is tailored to provide particular characteristic behavior on a nanometer scale, wherein all layers of said multilayered coating are deposited from a vapor phase, wherein the multilayered coating includes at least one oxide-based layer and at least one organic-based layer, wherein said vapor deposition employs a stagnant source of reactive moities which are depleted as a coating layer is deposited, wherein prior to deposition of a first organic-based layer, an oxide-based layer is deposited on said substrate, and wherein prior to deposition of said oxide-based layer on said substrate, said substrate is treated using an oxygen-based plasma.

13. A method in accordance with claim 12, wherein at least one oxide-based layer is deposited in the presence of an oxygen-containing plasma.

18. A method in accordance with claim 12, wherein an oxide based layer is deposited from precursors including a chlorosilane selected from the group consisting of tetrachlorosilane, hexachlorosilane, hexachlorosiloxane and combinations thereof.

19. A method in accordance with claim 18, wherein a total pressure in said process chamber ranges from about 0.5 Torr to about 30 Torr, and a partial pressure of said chlorosilane vaporous precursor ranges from about 0.5 Torr to about 15 Torr.

20. A method in accordance with claim 19 wherein a substrate temperature during deposition of said oxide ranges from about 15°

C. and about 80°

C.

21. A method in accordance with claim 20, wherein a temperature of a major processing surface inside said processing chamber ranges from about 20°

C. to about 100°

C.

27. A method in accordance with claim 12, wherein said at least one organic-based layer is deposited from an organo-chlorosilane vaporous precursor which includes a functional moiety selected from the group consisting of an alkyl group, an alkoxyl group, an alkyl substituted group containing fluorine, an alkoxyl substituted group containing fluorine, a vinyl group, an ethynyl group, an epoxy group, a glycoxy group, an acrylo group, a glycol substituted group containing a silicon atom or an oxygen atom, and combinations thereof, and wherein a total pressure in said process chamber ranges from about 0.5 Torr to about 30 Torr, and a partial pressure of said organo-chlorosilane vaporous precursor ranges from about 0.1 Torr to about 10 Torr.

28. A method in accordance with claim 27, wherein a substrate temperature during deposition of said organo-chlorosilane vaporous precursor ranges from about 15°

C. and about 80°

C.

14-17. -17. (canceled)

22-26. -26. (canceled)

29. (canceled)

30. A method of depositing a multilayered coating on a substrate from a vapor phase, wherein each layer deposition rate is controlled by controlling a total pressure in a processing chamber in which said coating is deposited, a partial pressure of at least one coating precursor, a temperature of a substrate on which said coating is deposited, and at least one temperature of a major processing surface inside said processing chamber.

31. (canceled)

32. A method of controlling the surface roughness of a multilayered organo-silicon-containing coating on a substrate, wherein said multilayered coating is deposited from a vapor phase, wherein at least one layer is formed using an organosilane precursor which is introduced into a coating deposition chamber in which said multilayered coating is deposited, followed by the introduction of water vapor, and wherein said surface roughness of said at least one layer is further controlled by controlling a total pressure in said deposition chamber, a partial pressure of at least one precursor, and a temperature of a substrate on which said coating is deposited.

34. A method in accordance with claim 32, where a partial pressure of each precursor is controlled to adjust said surface roughness of said organo-silicon-containing coating.

35. A method in accordance with claim 32, wherein a partial pressure of said water vapor precursor is controlled to adjust said surface roughness of said organo-silicon-containing coating.

33. (canceled)

36. A method of depositing a multilayered coating wherein an oxide-based layer thickness in direct contact with a substrate is controlled as a function of the chemical composition of said substrate, and wherein a SAM organic-based layer is deposited directly over said oxide-based layer, whereby an ability of said SAM organic-based layer to bond to said oxide-based layer is improved due to control of said oxide-based layer thickness.

37. A method in accordance with claim 36, wherein said coating includes at least two oxide-based layers and at least one organic-based layer, where each layer is deposited from a vapor phase, and wherein an oxide based layer and an organic-based layer are alternated.

38-39. -39. (canceled)

40. A structure comprising a substrate with a multilayered coating deposited over a surface of said substrate, wherein said multilayered coating comprises a SAM organic-based layer deposited directly over an oxide-based layer which is deposited directly over said substrate, and wherein a thickness of said oxide-based layer which is in direct contact with said substrate is controlled as a function of the chemical composition of said substrate, whereby an ability of said SAM organic-based layer to bond to said oxide-based layer is improved.

41. A structure in accordance with claim 40, wherein said multilayered coating comprises at least two oxide-based layers and at least one organic-based layer, wherein an oxide-based layer and an organic-based layer are alternated.

43. A structure in accordance with claim 40, wherein said multilayered coating comprises a SAM organic-based layer deposited directly over an oxide-based layer which is deposited directly over said substrate, and wherein said multilayered coating includes alternating layers of oxide-based material and SAM organic-based material.

46. A structure in accordance with claim 40, wherein said multilayered coating comprises at least two oxide-based layers or nitride-based layers and at least one organic-based layer, and wherein an organic-based layer forms an exterior surface of said multilayered coating.

47. A structure in accordance with claim 46, wherein said exterior surface of said multilayered coating exhibits a surface roughness ranging between about 0.5 nm RMS and about 15 nm RMS.

48. A structure in accordance with claim 47, wherein said surface roughness ranges between about 0.5 nm RMS and about 10 nm RMS.

49. A structure in accordance with claim 48, wherein said surface roughness ranges between about 0.5 nm RMS and about 5 nm RMS.

50. A structure in accordance with claim 46, wherein said oxide layer comprises an oxide selected from the group consisting of aluminum oxide, titanium oxide, silicon oxide, or combinations thereof.

51. A structure in accordance with claim 46, wherein said nitride layer comprises an oxide selected from the group consisting of aluminum nitride, titanium nitride, silicon nitride, or combinations thereof.

52. A structure in accordance with claim 40, wherein said oxide-based layer is selected from the group consisting of aluminum oxide, titanium oxide, silicon oxide, or combinations thereof.

53. A structure in accordance with claim 43, wherein said oxide-based layer is selected from the group consisting of aluminum oxide, titanium oxide, silicon oxide, or combinations thereof.

42. (canceled)

44-45. -45. (canceled)