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PULSED PLASMA ETCHING METHOD AND APPARATUS

  • US 20080081483A1
  • Filed: 12/29/2006
  • Published: 04/03/2008
  • Est. Priority Date: 09/30/2006
  • Status: Abandoned Application
First Claim
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1. A plasma etching method comprising:

  • preparing in a reaction chamber a semiconductor substrate on which a material layer to be etched is provided; and

    injecting an etching gas into the reaction chamber, the etching gas being ionized through an RF (Radio Frequency) power source to generate plasma, wherein;

    the RF power source outputs RF power in a pulse output mode.

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