DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME

• US 20080083927A1
• Filed: 10/02/2007
• Published: 04/10/2008
• Est. Priority Date: 10/04/2006
• Status: Abandoned Application

• Current Assignee: Mitsubishi Electric Corporation
• Original Assignee: Mitsubishi Electric Corporation
• Inventors: Takeguchi, Toru, Imamura, Takuji, Nishiura, Atsunori
• Application Number:
  US11/866,132
• Publication Number:
  US 20080083927A1
• Time in Patent Office: Days
• US Class Current: 257/72
• CPC Class Codes: G02F 1/136227 Through-hole connection of the pixel electrode to the active element through an insulation layer
• CPC Class Codes: G02F 1/136231 for reducing the number of lithographic steps
• CPC Class Codes: H01L 27/124 with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits wiring structures per se H01L23/52
• CPC Class Codes: H01L 27/1248 with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
• CPC Class Codes: H01L 29/41733 for thin film transistors with insulated gate

Abstract

A display device includes a substrate, a gate insulating film provided over the substrate and disposed between a semiconductor layer and a first conductive layer including a capacitor electrode and a gate electrode, an interlayer insulating film formed over the semiconductor layer, the first conductive layer and the gate insulating film, a second conductive layer having a signal line formed over the interlayer insulating film, a protective film formed over the interlayer insulating film and the second conductive layer and a pixel electrode layer formed over the protective film. The semiconductor layer and the second conductive layer are connected via the pixel electrode layer by the pixel electrode layer penetrating the protective film to reach the second conductive layer and also penetrating the protective film, the interlayer insulating film and the gate insulating film to reach the semiconductor layer.

Claims

1. A display device comprising:

a substrate;

a gate insulating film provided over the substrate and disposed between a semiconductor layer and a first conductive layer including a capacitor electrode and a gate electrode;

an interlayer insulating film formed over the semiconductor layer, the first conductive layer and the gate insulating film;

a second conductive layer having a signal line formed over the interlayer insulating film;

a protective film formed over the interlayer insulating film and the second conductive layer; and

a pixel electrode layer formed over the protective film,

wherein the semiconductor layer and the second conductive layer are connected via the pixel electrode layer by the pixel electrode layer penetrating the protective film to reach the second conductive layer and also penetrating the protective film, the interlayer insulating film and the gate insulating film to reach the semiconductor layer.

2. The display device according to claim 1, wherein the first conductive layer and the second conductive layer are connected via the pixel electrode layer by the pixel electrode layer penetrating the protective film to reach the second conductive layer and also penetrating the protective film and the interlayer insulating film to reach the first conductive layer.

3. The display device according to claim 1, wherein the first conductive layer and the semiconductor layer are connected via the pixel electrode layer by the pixel electrode layer penetrating the protective film and the interlayer insulating film to reach the first conductive layer and also penetrating the protective film, the interlayer insulating film and the gate insulating film to reach the semiconductor layer.

4. The display device according to claim 2, further comprising:

a gate line and a source line formed in a display area over the substrate;

a driving circuit for supplying a signal to the gate line or the source line; and

a first routing line or a second routing line formed in a frame area outside the display area over the substrate for connecting the driving circuit with the gate line and the source line,

wherein the first conductive layer includes the first routing line,

the second conductive line includes the second routing line, and

the first routing line and the second routing line are connected via the pixel electrode layer by the pixel electrode layer penetrating the protective film to reach the second routing line and also penetrating the protective film and the interlayer insulating film to reach the first routing line.

5. The display device according to claim 3, further comprising:

a gate line and a source line formed in a display area over the substrate;

a driving circuit for supplying a signal to the gate line or the source line;

a first routing line or a second routing line formed in a frame area outside the display area over the substrate for connecting the driving circuit with the gate line and the source line; and

a protection circuit formed outside the display area over the substrate for protecting each line from dielectric breakdown between the gate line and the source line or dielectric breakdown between the first routing line and the second routing line,

wherein in the protection circuit, the gate electrode and the semiconductor layer are connected via the pixel electrode layer by the pixel electrode layer penetrating the protective film and the interlayer insulating film to reach the gate electrode and also penetrating the protective film, the interlayer insulating film and the gate insulating film to reach the semiconductor layer.

6. The display device according to claim 1, wherein in all areas provided with the second conductive layer, a contact hole is not formed directly under the second conductive layer.

7. The display device according to claim 1, further comprising a contact hole reaching the semiconductor layer and a contact hole reaching the second conductive layer formed in one etching process.

8. The display device according to claim 1, further comprising a contact hole reaching the semiconductor layer, a contact hole reaching the first conductive layer and a contact hole reaching the second conductive layer formed in one etching process.

9. The display device according to claim 1, wherein the pixel electrode layer includes a transparent conductive layer.

10. The display device according to claim 9, wherein the pixel electrode layer and the semiconductor layer are connected via a barrier metal.

11. The display device according to claim 1, wherein the pixel electrode layer includes metal or an alloy using metal as main constituent.

12. The display device according to claim 1, wherein the pixel electrode layer is a laminated structure having an upper conducting film and a lower conducting film.

13. The display device according to claim 1, further comprising a terminal wiring provided outside a display area over the substrate and formed under the interlayer insulating film,

wherein the terminal wiring and the pixel electrode layer are connected by the pixel electrode layer penetrating the protective film and the interlayer insulating film to reach the terminal wiring.

14. A method of manufacturing a display device comprising:

forming a semiconductor layer, a first conductive layer including a capacitor electrode and a gate electrode and a gate insulating film disposed between the semiconductor layer and the first conductive layer over a substrate;

forming an interlayer insulating film over the semiconductor layer, the first conductive layer and the gate insulating film;

forming a second conductive layer having a signal line over the interlayer insulating film;

forming a protective film over the interlayer insulating film and the second conductive layer;

forming a contact hole penetrating the protective film to reach the second conductive layer, a contact hole penetrating the protective film and the interlayer insulating film to reach the first conductive layer and a contact hole penetrating the protective film, the interlayer insulating film and the gate insulating film to reach the semiconductor layer after forming the protective film; and

forming a pixel electrode layer over the protective film after forming the contact holes.

15. The method according to claim 14, wherein the contact hole reaching the semiconductor layer and the contact hole reaching the second conductive layer are formed in one etching process.

16. The method according to claim 14, wherein the contact hole reaching the semiconductor layer, the contact hole reaching the first conductive layer and the contact hole reaching the second conductive layer are formed in one etching process.

17. The method according to claim 14, wherein in the formation of the semiconductor layer, the first conductive layer and the gate insulating film over the substrate, a terminal wiring is formed outside a display area over the substrate, and

in the formation of the contact holes, a contact hole reaching the terminal wiring is formed.

18. The method according to claim 17, wherein the contact hole reaching the second conductive layer and the contact hole reaching the terminal wiring are formed in one etching process.