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FUSED NANOCRYSTAL THIN FILM SEMICONDUCTOR AND METHOD

  • US 20080083950A1
  • Filed: 10/10/2006
  • Published: 04/10/2008
  • Est. Priority Date: 10/10/2006
  • Status: Active Grant
First Claim
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1. A method of fabricating a thin film semiconductor component, the method comprising:

  • depositing a nanocrystal seed layer on a substrate within a defined boundary on the substrate; and

    inducing crystallization and aggregation of the nanocrystal seed layer using a reaction solution, such that the thin film semiconductor component is formed,wherein the thin film semiconductor component is formed at a reaction temperature below a boiling point of the reaction solution.

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