APPARATUS WITH REDUCED PROGRAM DISTURB IN NON-VOLATILE STORAGE
First Claim
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1. A non-volatile storage system, comprising:
- a set of control lines;
a set of non-volatile storage elements in communication with said control lines, said set of non-volatile storage elements includes a particular non-volatile storage element, a first subset of one or more non-volatile storage elements and a second subset of one or more non-volatile storage elements; and
a managing circuit, including one or more voltage providing circuits in communication with said set of control lines to provide signals to said set of non-volatile storage elements, in a state when said first subset of one or more non-volatile storage elements have not completed full programming since a last erase of said set said one or more voltage providing circuits provide boosting voltages to said first subset of one or more non-volatile storage elements and said second subset of one or more non-volatile storage elements including providing one or more higher boosting voltages to said first subset of one or more non-volatile storage elements in comparison to said second subset, said one or more voltage providing circuits provide a programming signal to said particular non-volatile storage element while said first subset of one or more non-volatile storage elements and said second subset of one or more non-volatile storage elements are boosted.
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Abstract
A non-volatile semiconductor storage system is programmed in a manner that reduces program disturb by applying a higher boosting voltage on one or more word lines that are connected non-volatile storage elements that may be partially programmed.
55 Citations
37 Claims
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1. A non-volatile storage system, comprising:
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a set of control lines; a set of non-volatile storage elements in communication with said control lines, said set of non-volatile storage elements includes a particular non-volatile storage element, a first subset of one or more non-volatile storage elements and a second subset of one or more non-volatile storage elements; and a managing circuit, including one or more voltage providing circuits in communication with said set of control lines to provide signals to said set of non-volatile storage elements, in a state when said first subset of one or more non-volatile storage elements have not completed full programming since a last erase of said set said one or more voltage providing circuits provide boosting voltages to said first subset of one or more non-volatile storage elements and said second subset of one or more non-volatile storage elements including providing one or more higher boosting voltages to said first subset of one or more non-volatile storage elements in comparison to said second subset, said one or more voltage providing circuits provide a programming signal to said particular non-volatile storage element while said first subset of one or more non-volatile storage elements and said second subset of one or more non-volatile storage elements are boosted. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
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15. A non-volatile storage system, comprising:
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a first set of non-volatile storage elements in communication with a first common control line that receives an inhibit signal, said first set of non-volatile storage elements includes a targeted unselected non-volatile storage element that receives a programming signal, a drain side neighbor unselected non-volatile storage element that receives a particular boosting signal and a first group of unprogrammed drain side unselected non-volatile storage elements receiving a different boosting signal, said particular boosting signal is greater than said different boosting signal; and a second set of non-volatile storage elements in communication with a second common control line that receives a program allowance signal, said second set of non-volatile storage elements includes a first non-volatile storage element that receives said programming signal, a second non-volatile storage element that receives said particular boosting signal and a second group of non-volatile storage elements that receives said different boosting signal, said first non-volatile storage element is next to said second non-volatile storage element. - View Dependent Claims (16, 17, 18, 19, 20)
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21. A non-volatile storage system, comprising:
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non-volatile storage elements arranged as a set of NAND strings; a set of word lines in communication with said non-volatile storage elements, said set of word lines comprise a selected word line, a neighbor word line with respect to said selected word line, and one or more other word lines, said one or more other word lines and said neighbor word line are on a common side of said selected word line; and a managing circuit, including one or more voltage providing circuits in communication with said word lines, said one or more voltage providing circuits provide a neighbor boosting voltage to said neighbor word line and one or more other boosting voltages to said one or more other word lines to boost unselected NAND strings, said one or more voltage providing circuits provide a programming signal to said selected word line while said unselected NAND strings are boosted and prior to applying a programming voltage to said other word lines since a last erase of said NAND strings, said neighbor boosting voltage is greater than said one or more other boosting voltages. - View Dependent Claims (22, 23, 24, 25, 26, 27, 28, 29)
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30. A non-volatile storage system, comprising:
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a set of NAND strings; a set of word lines in communication with said NAND strings, said set of word lines comprise a first word line, a second word line and other word lines, said first word line is next to said second word line with respect to said set of word lines; a managing circuit, including one or more voltage providing circuits in communication with said word lines, said managing circuit subjects non-volatile storage elements connected to said first word line to partial programming and subjects non-volatile storage elements connected to said second word line to partial programming, said managing circuit subsequently completes programming for said non-volatile storage elements connected to said first word line including applying a programming signal to said first word line, applying a first pass signal to said second word line and applying one or more other pass signals to said other word lines. - View Dependent Claims (31, 32, 33, 34, 35, 36, 37)
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Specification