Novel Gate Structure with Low Resistance for High Power Semiconductor Devices
First Claim
1. A gate structure for a U-shape Metal-Oxide-Semiconductor (UMOS) device, comprising:
- a dielectric layer formed into a U-shape having side walls and a floor to form a trench surrounding a dielectric layer interior region;
a doped poly-silicon layer deposited adjacent to the dielectric layer within the dielectric layer interior region, the doped poly-silicon layer having side walls and a floor surrounding a doped poly-silicon layer interior region;
a first metal layer deposited on the doped poly-silicon layer on a side opposite from the dielectric layer, the first metal layer having side walls and a floor surrounding a first metal layer interior region; and
an undoped poly-silicon layer deposited to fill the first metal layer interior region.
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Abstract
In accordance with an embodiment of the present invention, a gate structure for a U-shape Metal-Oxide-Semiconductor (UMOS) device includes a dielectric layer formed into a U-shape having side walls and a floor to form a trench surrounding a dielectric layer interior region, a doped poly-silicon layer deposited adjacent to the dielectric layer within the dielectric layer interior region where the doped poly-silicon layer has side walls and a floor surrounding a doped poly-silicon layer interior region, a first metal layer deposited on the doped poly-silicon layer on a side opposite from the dielectric layer where the first metal layer has side walls and a floor surrounding a first metal layer interior region, and an undoped poly-silicon layer deposited to fill the first metal layer interior region.
33 Citations
25 Claims
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1. A gate structure for a U-shape Metal-Oxide-Semiconductor (UMOS) device, comprising:
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a dielectric layer formed into a U-shape having side walls and a floor to form a trench surrounding a dielectric layer interior region; a doped poly-silicon layer deposited adjacent to the dielectric layer within the dielectric layer interior region, the doped poly-silicon layer having side walls and a floor surrounding a doped poly-silicon layer interior region; a first metal layer deposited on the doped poly-silicon layer on a side opposite from the dielectric layer, the first metal layer having side walls and a floor surrounding a first metal layer interior region; and an undoped poly-silicon layer deposited to fill the first metal layer interior region. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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13. A method using a UMOS transistor,
the UMOS transistor comprising: -
a dielectric layer formed into a U-shape having side walls and a floor to form a trench surrounding a dielectric layer interior region; a doped poly-silicon layer deposited adjacent to the dielectric layer within the dielectric layer interior region, the doped poly-silicon layer having side walls and a floor surrounding a doped poly-silicon layer interior region, the doped poly-silicon layer is composed of a positively doped semiconductor material selected from the group consisting of silicon (Si) and silicon carbide (SiC); a first metal layer deposited on the doped poly-silicon layer on a side opposite from the dielectric layer, the first metal layer having side walls and a floor surrounding a first metal layer interior region, the side walls of the first metal layer being etched below the side walls of the dielectric layer, the first metal layer being electrically connected to a gate terminal, the side walls of the first metal layer being etched below the side walls of the dielectric layer a distance of between about 0.5 microns to about 2.0 microns; an undoped poly-silicon layer deposited to fill the metal layer interior region, the undoped poly-silicon layer being composed of a semiconductor material selected from the group consisting of silicon (Si) and silicon carbide (SiC); a P+ Junction gate adjacent to-a floor portion of the dielectric layer; a drift region surrounding the dielectric layer and the P+ Junction gate; a drain terminal adjacent to the drift region on a side opposite the P+ Junction gate; a source terminal adjacent to the dielectric layer on a side facing the dielectric layer interior region, the method of using the UMOS transistor comprising the operation of; applying a controlling voltage to the gate terminal, the controlling voltage applied to the gate terminal being effective in controlling the flow of electrical current between the source terminal and the drain terminal. - View Dependent Claims (14, 15, 16)
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17. A gate structure for a Junction Field Effect Transistor (JFET) device, comprising:
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a dielectric layer having two disjoint sidewall regions deposited on side walls of a trench having side walls and a floor, each disjoint side wall region having a first side facing into a trench interior region and a second side facing away from the trench interior region; a metal layer formed into a U-shape deposited on the dielectric layer first sides and the floor of the of the trench surrounding a metal layer interior region, the metal layer being electrically connected to a gate terminal; an undoped poly-silicon layer deposited to fill the metal layer interior region, the undoped poly-silicon layer being composed of a semiconductor material selected from the group consisting of silicon (Si) and silicon carbide (SiC). - View Dependent Claims (18, 19, 20, 21, 22)
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23. A method of using a junction field effect transistor (JFET) transistor,
the JFET transistor comprising: -
a dielectric layer deposited on side walls of a trench having side walls and a floor, each side wall having a first side facing into a trench interior region and a second side facing away from the trench interior region; a metal layer formed into a U-shape deposited on the dielectric layer first sides and the floor of the of the trench surrounding a metal layer interior region, an end portion of the side walls of the metal layer being disposed below the side walls of the dielectric layer disjoint sidewall regions a distance of between about 0.5 microns to about 2.0 microns, the metal layer being electrically connected to a gate terminal; an undoped poly-silicon layer deposited to fill the metal layer interior region, the undoped poly-silicon layer being composed of a semiconductor material selected from the group consisting of silicon (Si) and silicon carbide (SiC); a P+ Junction gate adjacent to a floor portion of the metal layer; a drift region surrounding the dielectric layer second sides and the P+ Junction gate, the drift region being composed of a semiconductor material selected from the group consisting of silicon (Si) and silicon carbide (SiC); a drain terminal adjacent to the drift region on a side opposite the P+ Junction gate; a source terminal adjacent to the drift region on a side facing the metal layer interior region, the method of using the JFET transistor comprising the operation of; applying a controlling voltage to the gate terminal, the controlling voltage applied to the gate terminal being effective in controlling the flow of electrical current between the source terminal and the drain terminal. - View Dependent Claims (24, 25)
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Specification