DUAL MODE ION SOURCE FOR ION IMPLANTATION

• US 20080087219A1
• Filed: 11/14/2007
• Published: 04/17/2008
• Est. Priority Date: 12/13/1999
• Status: Active Grant

• Current Assignee: SemEquip, Inc. (3M Company)
• Original Assignee: SemEquip, Inc. (3M Company)
• Inventors: Horsky, Thomas
• Granted Patent: US 7,834,554 B2
• Time in Patent Office: Days
• US Class Current: 118/698
• CPC Class Codes: C23C 14/48 Ion implantation
• CPC Class Codes: H01J 2237/0815 Methods of ionisation
• CPC Class Codes: H01J 2237/082 Electron beam
• CPC Class Codes: H01J 2237/0827 for producing different ions sequentially
• CPC Class Codes: H01J 2237/31701 Ion implantation
• CPC Class Codes: H01J 27/026 Cluster ion sources
• CPC Class Codes: H01J 27/08 using arc discharge
• CPC Class Codes: H01J 27/205 with electrons, e.g. electron impact ionisation, electron attachment
• CPC Class Codes: H01J 37/08 Ion sources; Ion guns
• CPC Class Codes: H01J 37/3171 for ion implantation plasma immersion ion implantation H01J37/32412
• CPC Class Codes: H01L 21/265 producing ion implantation
• CPC Class Codes: H01L 21/26513 of electrically active species
• CPC Class Codes: H01L 21/26566 of a cluster, e.g. using a gas cluster ion beam
• CPC Class Codes: H01L 21/2658 of a molecular ion, e.g. decaborane
• CPC Class Codes: H01L 21/823814 with a particular manufacturing method of the source or drain structures, e.g. specific source or drain implants or silicided source or drain structures or raised source or drain structures

Abstract

An ion source is disclosed for providing a range of ion beams consisting of either ionized clusters, such as B₂H_x⁺, B₅H_x⁺, B₁₈H_x⁺, B₁₈H_x⁺, P₄⁺ or As₄⁺, or monomer ions, such as Ge⁺, In⁺, Sb⁺, B⁺, As⁺, and P⁺, to enable cluster implants and monomer implants into silicon substrates for the purpose of manufacturing CMOS devices, and to do so with high productivity. The range of ion beams is generated by a universal ion source in accordance with the present invention which is configured to operate in two discrete modes: an electron impact mode, which efficiently produces ionized clusters, and an arc discharge mode, which efficiently produces monomer ions.

Claims

1. (canceled)

2. A universal ion source comprising:

a source of feed gas or vapor; and

an ion source for receiving said source of feed gas or vapor and generating atomic ions in a first mode of operation and molecular ions in a second mode of operation.

3. The universal ion source as recited in claim 2, wherein said molecular ions are cluster ions.

4. The universal ion source as recited in claim 2, wherein said molecular ions are P-type cluster ions.

5. The universal ion source as recited in claim 3, wherein said P-type cluster ions are borohydride ions.

6. The universal ion source as recited in claim 3, wherein said molecular ions are N-type cluster ions.

7. The universal ion source as recited in claim 6, wherein said N-type cluster ion include P₄⁺.

8. The universal ion source as recited in claim 6, wherein said N-type cluster ion include As₄⁺.

9. The universal ion source as recited in claim 2, wherein said first mode of operation is an arc discharge mode.

10. The universal ion source as recited in claim 2, wherein said second mode of operation is a direct electron impact mode.

11. The universal ion source as recited in claim 2, wherein said source of feed gas or vapor includes a first vaporizer for receiving a first solid source material and generating a first vapor.

12. The universal ion source as recited in claim 11, wherein said source of feed gas or vapor includes a second vaporizer for receiving a second solid source material and generating a second vapor.

13. The universal ion source as recited in claim 11, wherein said first vaporizer operates in the range of about 400°

C. about 550°

C.

14. The universal ion source as recited in claim 12, wherein said second vaporizer operates in the range of about 20°

C. to about 120°

C.

15. The universal ion source as recited in claim 2 wherein said molecular ions are dimer ions.

16. The universal ion source as recited in claim 15, wherein said dimer ions include P₂⁺.

17. The universal ion source as recited in claim 15, wherein said dimer ions include As₂⁺.

18. The universal ion source as recited in claim 2 wherein said molecular ions are trimer ions.

19. The universal ion source as recited in claim 2 wherein said trimer ions include As₃⁺.

20. The universal ion source as recited in claim 2 wherein said trimer ions include P₃⁺.

21. The universal ion source as recited in claim 12, wherein said second solid source material is B₁₈H₂₂.

22. The universal ion source as recited in claim 2, further including a cleaning gas feed.

23. The universal ion source as recited in claim 2, further including a process gas feed.

24. The universal ion source as recited in claim 2, wherein said source of feed gas includes one or more hot vaporizers configured to operate in the range of about 400°

C. to about 550°

C.

25. The universal ion source as recited in claim 2, wherein said source of feed gas includes one or more cold vaporizers configured to operate in the range of about 20°

C. to about 120°

C.

26. The universal ion source as recited in claim 2 wherein said molecular ions are tetramer ions.

27. The universal ion source as recited in claim 15 wherein said tetramer ions include P₄⁺.

28. The universal ion source as recited in claim 15 wherein said tetramer ions include As₄⁺.

29. A universal ion source comprising:

a source of feed gas or vapor; and

an ion source for receiving said source of feed gas or vapor and generating atomic ions at a relatively high temperature defining a hot mode of operation and molecular ions at a lower temperature in a cold mode of operation.

30. The universal ion source as recited in claim 29, wherein said ions are generated in an ionization volume at least partially enclosed by a liner.

31. The universal ion source as recited in claim 29, wherein the temperature of said liner is maintained at a temperature lower than said relatively high temperature.