Solid-state image capturing device, image capturing device, and manufacturing method of solid-state image capturing device

• US 20080087800A1
• Filed: 09/25/2007
• Published: 04/17/2008
• Est. Priority Date: 10/04/2006
• Status: Active Grant

• Current Assignee: Sony Corporation (Sony Group Corp.)
• Original Assignee: Sony Corporation (Sony Group Corp.)
• Inventors: Toda, Atsushi
• Granted Patent: US 7,928,352 B2
• Time in Patent Office: Days
• US Class Current: 250/214C
• CPC Class Codes: H01L 27/14603 Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
• CPC Class Codes: H01L 27/14609 Pixel-elements with integrated switching, control, storage or amplification elements scanning details of imagers (circuitry of solid-state image sensors H04N25/00); circuitry of imagers H04N25/70
• CPC Class Codes: H01L 27/14621 Colour filter arrangements
• CPC Class Codes: H01L 27/14623 Optical shielding
• CPC Class Codes: H01L 27/14627 Microlenses
• CPC Class Codes: H01L 27/14645 Colour imagers
• CPC Class Codes: H01L 27/14649 Infrared imagers
• CPC Class Codes: H01L 27/14843 Interline transfer
• CPC Class Codes: H01L 31/035281 Shape of the body

Abstract

A solid-state image capturing device, includes a semiconductor board, upon which same semiconductor board are disposed in a predetermined order: a first detecting unit for detecting a first wavelength region component within an electromagnetic wave; and a second detecting unit for detecting a second wavelength region component which is longer wavelength side than at least the first wavelength region component, wherein in the depth direction from the surface of the semiconductor board, a valid region where a first electroconductive type dopant of the second detecting unit is formed reaches a portion deeper than a valid region where a first electroconductive type dopant of the first detecting unit is formed.

Claims

1. A solid-state image capturing device, wherein there are disposed on a same semiconductor board in a predetermined order:

a first detecting unit configured to detect a first wavelength region component within an electromagnetic wave; and

a second detecting unit configured to detect a second wavelength region component which is longer wavelength side than at least said first wavelength region component;

and wherein, in the depth direction from the surface of said semiconductor board, a valid region where a first electroconductive type dopant of said second detecting unit is formed reaches a portion deeper than a valid region where said first electroconductive type dopant of said first detecting unit is formed.

2. The solid-state image capturing device according to claim 1, wherein a valid region where a first electroconductive type dopant of a detecting unit configured to detect an electroconductive wave in the depth direction from the surface of said semiconductor board is subjected to modulation doping, whereby the deeper from the surface side of said semiconductor board, the lower the concentration of said dopant becomes.

3. The solid-state image capturing device according to claim 2, comprising:

a first detecting unit configured to detect a first wavelength region component within said electromagnetic wave; and

a second detecting unit configured to detect a second wavelength region component which is at a longer wavelength side than at least said first wavelength region component,

wherein at least said second detecting unit is subjected to said modulation doping.

4. The solid-state image capturing device according to claim 2, wherein a second electroconductive type dopant is formed such that the peak position of concentration of said second electroconductive type dopant is deeper than the peak position of concentration of said first electroconductive type dopant.

5. An image capturing device comprising:

a solid-state image capturing device wherein there are disposed on a same semiconductor board in a predetermined order;

a first detecting unit configured to detect a first wavelength region component within an electromagnetic wave; and

a second detecting unit configured to detect a second wavelength region component which is at a longer wavelength side than at least said first wavelength region component;

and wherein, in the depth direction from the surface of said semiconductor board a valid region where a first electroconductive type dopant of said second detecting unit is formed reaches a portion deeper than a valid region where said first electroconductive type dopant of said first detecting unit is formed; and

a correction processing unit configured to subject a signal obtained at said first detecting unit to correction using a signal obtained at said second detecting unit.

6. The image capturing device according to claim 5, wherein with said solid-state image capturing device, a valid region where a first electroconductive type dopant of said detecting unit is formed in the depth direction from the surface of said semiconductor board is subjected to modulation doping, whereby the deeper from the surface side of said semiconductor board, the lower the concentration of said dopant becomes.

7. A manufacturing method of a solid-state image capturing device, comprising the steps of:

forming a control film configured to restrict the implantation depth as to the implantation of a first electroconductive type dopant is formed on the surface of a semiconductor board at a position corresponding to a first detecting unit configured to detect a first wavelength region component within an electromagnetic wave;

forming an opening portion of said control film on the surface of said semiconductor board at a position corresponding to a second detecting unit configured to detect a second wavelength region component which is longer wavelength side than said first wavelength region component; and

simultaneously forming said first detecting unit and said second detecting unit each having a different valid region where said first electroconductive type dopant is formed on the same semiconductor board by irradiating said first electroconductive type dopant from the surface side of said semiconductor board.

8. The manufacturing method according to claim 7, wherein a valid region where said first electroconductive type dopant of said detecting unit is formed is subjected to modulation doping by changing the irradiation intensity of said first electroconductive type dopant gradually, whereby the deeper from the surface side of said semiconductor board, the lower the concentration of said dopant becomes.